利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

85 条记录 (耗时 0.034 秒)

    Molybdenum-based electrode with carbon nanotube growth
    2.
    发明申请
    Molybdenum-based electrode with carbon nanotube growth 审中-公开
    具有碳纳米管生长的钼基电极

    公开(公告)号：US20060226550A1

    公开(公告)日：2006-10-12

    申请号：US11389927

    申请日：2006-03-27

    申请人： Hongjie Dai ,  Nathan Franklin ,  Qian Wang

    发明人： Hongjie Dai ,  Nathan Franklin ,  Qian Wang

    IPC分类号： H01L23/48

    CPC分类号： H01M4/38 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  G11C23/00 ,  G11C2213/16 ,  H01L21/4889 ,  H01L51/0002 ,  H01L51/0048 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/105 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A carbon nanotube is formed on at least one Molybdenum-based electrode. In one embodiment, a carbon-nanotube device includes a pair of Molybdenum-based electrodes over respective terraces. Using a catalyst on the Molybdenum-based material of at least one electrode, a carbon nanotube is grown over a gap that separates the terraces to connect the Molybdenum-based electrodes. Yet other aspects of the present invention employ carbon nanotubes extending (suspended) from respective Molybdenum-based structures for use in electrically addressable devices. The nanotubes can also be formed by patterned growth to bridge such Molybdenum-based electrodes. A particular method for manufacturing this device does not require post-growth processing. Applications include, among many others, scalable nanotube transistors/switches nano-electromechanical systems.

    摘要翻译： 在至少一个钼基电极上形成碳纳米管。 在一个实施例中，碳纳米管装置包括在各个梯田上的一对钼基电极。 在至少一个电极的钼基材料上使用催化剂，在分开梯田以连接钼基电极的间隙上生长碳纳米管。 本发明的其它方面使用从相应的钼基结构延伸（悬挂）用于电可寻址装置的碳纳米管。 纳米管也可以通过图案生长形成以桥接这种钼基电极。 用于制造该装置的特定方法不需要后生长处理。 应用包括许多其他可扩展的纳米管晶体管/开关纳米机电系统。

    Molybdenum-based electrode with carbon nanotube growth
    3.
    发明申请
    Molybdenum-based electrode with carbon nanotube growth 审中-公开
    具有碳纳米管生长的钼基电极

    公开(公告)号：US20080023839A9

    公开(公告)日：2008-01-31

    申请号：US11389927

    申请日：2006-03-27

    申请人： Hongjie Dai ,  Nathan Franklin ,  Qian Wang

    发明人： Hongjie Dai ,  Nathan Franklin ,  Qian Wang

    IPC分类号： H01L23/48

    CPC分类号： H01M4/38 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  G11C23/00 ,  G11C2213/16 ,  H01L21/4889 ,  H01L51/0002 ,  H01L51/0048 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/105 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A carbon nanotube is formed on at least one Molybdenum-based electrode. In one embodiment, a carbon-nanotube device includes a pair of Molybdenum-based electrodes over respective terraces. Using a catalyst on the Molybdenum-based material of at least one electrode, a carbon nanotube is grown over a gap that separates the terraces to connect the Molybdenum-based electrodes. Yet other aspects of the present invention employ carbon nanotubes extending (suspended) from respective Molybdenum-based structures for use in electrically addressable devices. The nanotubes can also be formed by patterned growth to bridge such Molybdenum-based electrodes. A particular method for manufacturing this device does not require post-growth processing. Applications include, among many others, scalable nanotube transistors/switches nano-electromechanical systems.

    摘要翻译： 在至少一个钼基电极上形成碳纳米管。 在一个实施例中，碳纳米管装置包括在各个梯田上的一对钼基电极。 在至少一个电极的钼基材料上使用催化剂，在分开梯田以连接钼基电极的间隙上生长碳纳米管。 本发明的其它方面使用从相应的钼基结构延伸（悬挂）用于电可寻址装置的碳纳米管。 纳米管也可以通过图案生长形成以桥接这种钼基电极。 用于制造该装置的特定方法不需要后生长处理。 应用包括许多其他可扩展的纳米管晶体管/开关纳米机电系统。

    Self-oriented bundles of carbon nanotubes and method of making same
    4.
    发明授权
    Self-oriented bundles of carbon nanotubes and method of making same 有权
    碳纳米管的自取向束及其制造方法

    公开(公告)号：US06900580B2

    公开(公告)日：2005-05-31

    申请号：US09858783

    申请日：2001-05-15

    申请人： Hongjie Dai ,  Shoushan Fan ,  Michael Chapline ,  Nathan Franklin ,  Thomas Tombler

    发明人： Hongjie Dai ,  Shoushan Fan ,  Michael Chapline ,  Nathan Franklin ,  Thomas Tombler

    IPC分类号： B01J23/745 ,  B01J37/02 ,  B01J37/14 ,  C01B31/02 ,  C23C14/04 ,  C23C14/14 ,  C23C16/26 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J9/24

    CPC分类号： H01J9/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/06 ,  C01B2202/08 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/939

    摘要： A field emission device having bundles of aligned parallel carbon nanotubes on a substrate. The carbon nanotubes are oriented perpendicular to the substrate. The carbon nanotube bundles may be up to 300 microns tall, for example. The bundles of carbon nanotubes extend only from regions of the substrate patterned with a catalyst material. Preferably, the catalyst material is iron oxide. The substrate is preferably porous silicon, as this produces the highest quality, most well-aligned nanotubes. Smooth, nonporous silicon or quartz can also be used as the substrate. The method of the invention starts with forming a porous layer on a silicon substrate by electrochemical etching. Then, a thin layer of iron is deposited on the porous layer in patterned regions. The iron is then oxidized into iron oxide, and then the substrate is exposed to ethylene gas at elevated temperature. The iron oxide catalyzes the formation of bundles of aligned parallel carbon nanotubes which grow perpendicular to the substrate surface. The height of the nanotube bundles above the substrate is determined by the duration of the catalysis step. The nanotube bundles only grow from the patterned regions.

    摘要翻译： 一种场致发射器件，其在衬底上具有排列的平行碳纳米管束。 碳纳米管垂直于衬底取向。 例如，碳纳米管束可以高达300微米高。 碳纳米管束仅从由催化剂材料图案化的衬底的区域延伸。 优选地，催化剂材料是氧化铁。 衬底优选为多孔硅，因为其产生最高质量，最良好排列的纳米管。 光滑，无孔的硅或石英也可以用作基材。 本发明的方法开始于通过电化学蚀刻在硅衬底上形成多孔层。 然后，在图案化区域的多孔层上沉积薄层的铁。 然后将铁氧化成氧化铁，然后将基板在升高的温度下暴露于乙烯气体。 氧化铁催化垂直于衬底表面生长的排列的平行碳纳米管束的形成。 基底上方的纳米管束的高度由催化步骤的持续时间决定。 纳米管束仅从图案化区域生长。

    Self-oriented bundles of carbon nanotubes and method of making same
    5.
    发明授权
    Self-oriented bundles of carbon nanotubes and method of making same 有权
    碳纳米管的自取向束及其制造方法

    公开(公告)号：US06232706B1

    公开(公告)日：2001-05-15

    申请号：US09191728

    申请日：1998-11-12

    申请人： Hongjie Dai ,  Shoushan Fan ,  Michael Chapline ,  Nathan Franklin ,  Thomas Tombler

    发明人： Hongjie Dai ,  Shoushan Fan ,  Michael Chapline ,  Nathan Franklin ,  Thomas Tombler

    IPC分类号： H01J102

    CPC分类号： H01J9/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/06 ,  C01B2202/08 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/939

    摘要： A field emission device having bundles of aligned parallel carbon nanotubes on a substrate. The carbon nanotubes are oriented perpendicular to the substrate. The carbon nanotube bundles may be up to 300 microns tall, for example. The bundles of carbon nanotubes extend only from regions of the substrate patterned with a catalyst material. Preferably, the catalyst material is iron oxide. The substrate is preferably porous silicon, as this produces the highest quality, most well-aligned nanotubes. Smooth, nonporous silicon or quartz can also be used as the substrate. The method of the invention starts with forming a porous layer on a silicon substrate by electrochemical etching. Then, a thin layer of iron is deposited on the porous layer in patterned regions. The iron is then oxidized into iron oxide, and then the substrate is exposed to ethylene gas at elevated temperature. The iron oxide catalyzes the formation of bundles of aligned parallel carbon nanotubes which grow perpendicular to the substrate surface. The height of the nanotube bundles above the substrate is determined by the duration of the catalysis step. The nanotube bundles only grow from the patterned regions.

    摘要翻译： 一种场致发射器件，其在衬底上具有排列的平行碳纳米管束。 碳纳米管垂直于衬底取向。 例如，碳纳米管束可以高达300微米高。 碳纳米管束仅从由催化剂材料图案化的衬底的区域延伸。 优选地，催化剂材料是氧化铁。 衬底优选为多孔硅，因为其产生最高质量，最良好排列的纳米管。 光滑，无孔的硅或石英也可以用作基材。 本发明的方法开始于通过电化学蚀刻在硅衬底上形成多孔层。 然后，在图案化区域的多孔层上沉积薄层的铁。 然后将铁氧化成氧化铁，然后将基板在升高的温度下暴露于乙烯气体。 氧化铁催化垂直于衬底表面生长的排列的平行碳纳米管束的形成。 基底上方的纳米管束的高度由催化步骤的持续时间决定。 纳米管束仅从图案化区域生长。