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10 条记录 (耗时 0.033 秒)

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF 失效
    半导体器件及其制造方法

    公开(公告)号：US20100068860A1

    公开(公告)日：2010-03-18

    申请号：US12621537

    申请日：2009-11-19

    申请人： Hongyong ZHANG ,  Yasuhiko TAKEMURA ,  Toshimitsu KONUMA ,  Hideto OHNUMA ,  Naoaki YAMAGUCHI ,  Hideomi SUZAWA ,  Hideki UOCHI

    发明人： Hongyong ZHANG ,  Yasuhiko TAKEMURA ,  Toshimitsu KONUMA ,  Hideto OHNUMA ,  Naoaki YAMAGUCHI ,  Hideomi SUZAWA ,  Hideki UOCHI

    IPC分类号： H01L21/336

    CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

    摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

    摘要翻译： 提供了一种方法，通过该方法可以容易地形成轻掺杂漏极（LDD）区域，并且在具有覆盖有氧化物覆盖层的栅电极的薄膜晶体管中的源/漏区域中以良好的产率形成。 通过以栅极电极作为掩模，以自对准的方式将杂质引入岛状硅膜中形成轻掺杂漏极（LDD）区域。 首先，通过使用旋转 - 倾斜离子注入在岛状硅膜中形成低浓度杂质区，以相对于衬底从倾斜方向进行离子掺杂。 此时也在栅电极下方形成低浓度杂质区。 之后，将高浓度的杂质通常引入衬底，从而形成高浓度杂质区域。 在上述过程中，低浓度杂质区域保留在栅电极下方并构成轻掺杂漏区。

    EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    EL显示装置及其制造方法

    公开(公告)号：US20090267076A1

    公开(公告)日：2009-10-29

    申请号：US12418749

    申请日：2009-04-06

    申请人： Shunpei YAMAZAKI ,  Mayumi MIZUKAMI ,  Toshimitsu KONUMA

    发明人： Shunpei YAMAZAKI ,  Mayumi MIZUKAMI ,  Toshimitsu KONUMA

    IPC分类号： H01L33/00

    CPC分类号： H01L27/3262 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3272 ,  H01L27/3276 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

    摘要： Plurality of pixels (102) are arranged on the substrate. Each of the pixels (102) is provided with an EL element which utilizes as a cathode a pixel electrode (105) connected to a current control TFT (104). On a counter substrate (110), a light shielding film (112) is disposed at the position corresponding to periphery of each pixel (102), while a color filter (113) is disposed at the position corresponding to each of the pixels (102). This light shielding film makes the contour of the pixels clear, resulting in an image display with high definition. In addition, it is possible to fabricate the EL display device of the present invention with most of an existing manufacturing line for liquid crystal display devices. Thus, an amount of equipment investment can be significantly reduced, thereby resulting in a reduction in the total manufacturing cost.

    摘要翻译： 多个像素（102）被布置在基板上。 每个像素（102）设置有EL元件，其利用连接到电流控制TFT（104）的像素电极（105）作为阴极。 在对置基板（110）上，在与各像素（102）的周围对应的位置设置遮光膜（112），同时在与每个像素（102）对应的位置设置滤色器（113） ）。 该遮光膜使像素的轮廓清晰，导致高分辨率的图像显示。 此外，可以利用大部分现有的液晶显示装置制造线来制造本发明的EL显示装置。 因此，可以显着减少设备投资的量，从而导致总制造成本的降低。