公开(公告)号：US07569856B2

公开(公告)日：2009-08-04

申请号：US11078440

申请日：2005-03-14

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US20050153489A1

公开(公告)日：2005-07-14

申请号：US11078440

申请日：2005-03-14

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US6049092A

公开(公告)日：2000-04-11

申请号：US838783

申请日：1997-04-10

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31144 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L21/31116 ,  H01L21/31683

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an loff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间设置具有较高电阻率的区域以便减小漏电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US5885888A

公开(公告)日：1999-03-23

申请号：US800184

申请日：1997-02-13

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C23F1/20 ,  H01L21/311 ,  H01L21/336 ,  H01L29/423 ,  H01L21/302

CPC分类号： H01L29/66757 ,  H01L21/31111 ,  H01L29/42372 ,  Y10S438/97

摘要： An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide layer formed on the surface of a material containing aluminum as the principal component thereof.

摘要翻译： 至少包含磷酸，乙酸和硝酸的蚀刻材料，其中加入铬酸。 还要求保护的是使用上述蚀刻材料的蚀刻工艺，条件是该方法包括通过使用溶液选择性地蚀刻形成在包含铝的材料的表面上的氧化铝层作为其主要成分。

公开(公告)号：US5856853A

公开(公告)日：1999-01-05

申请号：US839936

申请日：1997-04-18

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/136

CPC分类号： G02F1/136204

摘要： In an active matrix type liquid crystal electro-optical device using thin-film transistors, a metal film is formed on a transparent electrode that is opposed to the thin-film transistors. The metal film is oxidized by anode oxidation method using the electrode as an anode, to form a metal oxide film that serves as a short circuit preventing film. Alternatively, after a grid-shaped mask is formed on the metal film, the metal film is oxidized using the electrode as an anode, the mask is removed, and the metal film is again anode-oxidized, to form a non-oxidized portion. Thus, transparent and opaque regions, i.e., a black matrix is formed.

摘要翻译： 在使用薄膜晶体管的有源矩阵型液晶电光装置中，在与薄膜晶体管相对的透明电极上形成金属膜。 通过使用电极作为阳极的阳极氧化法将金属膜氧化，形成用作防短路膜的金属氧化物膜。 或者，在金属膜上形成栅格状掩模之后，使用电极作为阳极氧化金属膜，除去掩模，再次阳极氧化金属膜，形成非氧化部分。 因此，形成透明和不透明区域，即黑矩阵。

公开(公告)号：US5830786A

公开(公告)日：1998-11-03

申请号：US654030

申请日：1996-05-28

申请人： Hongyong Zhang ,  Hideki Uochi ,  Shunpei Yamazaki ,  Yasuhiko Takemura ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Hongyong Zhang ,  Hideki Uochi ,  Shunpei Yamazaki ,  Yasuhiko Takemura ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/76 ,  H01L29/49 ,  H01L21/3215

CPC分类号： H01L21/02071 ,  H01L21/28079 ,  H01L21/32134 ,  H01L29/4908 ,  H01L29/66757

摘要： A process for fabricating an electronic circuit by oxidizing the surroundings of a metallic interconnection such as of aluminum, tantalum, and titanium, wherein anodic oxidation is effected at a temperature not higher than room temperature, preferably, at 10.degree. C. or lower, and more preferably, at 0.degree. C. or lower. The surface oxidation rate of a metallic interconnection can be maintained constant to provide a surface free of irregularities.

摘要翻译： 通过氧化诸如铝，钽和钛的金属互连的周围来制造电子电路的方法，其中阳极氧化在不高于室温，优选在10℃或更低的温度下进行，以及 更优选在0℃以下。 金属互连的表面氧化速率可以保持恒定，以提供没有凹凸的表面。

公开(公告)号：US20050142705A1

公开(公告)日：2005-06-30

申请号：US11064821

申请日：2005-02-25

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

公开(公告)号：US5736434A

公开(公告)日：1998-04-07

申请号：US473951

申请日：1995-06-07

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C25D11/04 ,  C25D11/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84 ,  H01L21/326 ,  H01L21/479

CPC分类号： H01L29/66765 ,  C25D11/02 ,  H01L21/28079 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76888

摘要： An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, and maintaining the voltage at the predetermined value thereafter.

摘要翻译： 含有低浓度杂质，从而提高膜质量的阳极氧化物及其制造方法。 该方法包括增加金属薄膜和阴极之间的电流，直到它们之间的电压达到预定值，然后将电压保持在预定值。

公开(公告)号：US5639344A

公开(公告)日：1997-06-17

申请号：US436907

申请日：1995-05-08

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C23F1/20 ,  H01L21/311 ,  H01L21/336 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L29/66757 ,  H01L21/31111 ,  H01L29/42372 ,  Y10S438/97

摘要： An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide layer formed on the surface of a material containing aluminum as the principal component thereof.

摘要翻译： 至少包含磷酸，乙酸和硝酸的蚀刻材料，其中加入铬酸。 还要求保护的是使用上述蚀刻材料的蚀刻工艺，条件是该方法包括通过使用溶液选择性地蚀刻形成在包含铝的材料的表面上的氧化铝层作为其主要成分。

公开(公告)号：US5595638A

公开(公告)日：1997-01-21

申请号：US401698

申请日：1995-03-10

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C25D11/04 ,  C25D11/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786 ,  C25D5/00 ,  C25D5/18 ,  C25D5/48 ,  C25D11/00

CPC分类号： H01L29/66765 ,  C25D11/02 ,  H01L21/28079 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76888

摘要： An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, and maintaining the voltage at the predetermined value thereafter.

摘要翻译： 含有低浓度杂质，从而提高膜质量的阳极氧化物及其制造方法。 该方法包括增加金属薄膜和阴极之间的电流，直到它们之间的电压达到预定值，然后将电压保持在预定值。