公开(公告)号：US06794209B2

公开(公告)日：2004-09-21

申请号：US10186647

申请日：2002-07-01

申请人： Horst Baumeister ,  Roland Gessner ,  Eberhard Veuhoff ,  Gundolf Wenger

发明人： Horst Baumeister ,  Roland Gessner ,  Eberhard Veuhoff ,  Gundolf Wenger

IPC分类号： H01L2100

CPC分类号： H01S5/12 ,  H01S5/1231 ,  H01S5/2081

摘要： The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is used as the etchant. The at least one etching step produces at least one grating structure of a DFB laser. This provides an efficient method for fabricating DFB lasers.

摘要翻译： 本发明涉及一种用于制造半导体材料中的结构的方法。 在外延装置中原位进行至少一个蚀刻步骤，并且使用叔丁基氯作为蚀刻剂。 至少一个蚀刻步骤产生DFB激光器的至少一个光栅结构。 这提供了一种制造DFB激光器的有效方法。

公开(公告)号：US06699778B2

公开(公告)日：2004-03-02

申请号：US10052950

申请日：2002-01-18

申请人： Bernd Borchert ,  Horst Baumeister ,  Roland Gessner ,  Eberhard Veuhoff ,  Gundolf Wenger

发明人： Bernd Borchert ,  Horst Baumeister ,  Roland Gessner ,  Eberhard Veuhoff ,  Gundolf Wenger

IPC分类号： H01L2128

CPC分类号： H01L21/0335 ,  H01L21/3085 ,  H01S5/2077 ,  H01S5/2081 ,  Y10S438/936

摘要： A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.

摘要翻译： 一种方法产生用于半导体部件，特别是BH激光二极管的结构，其中在掩模步骤中将掩模材料施加到样品。 蚀刻步骤中的蚀刻速率取决于掩模材料的组成和/或性质。 以这样的方式选择蚀刻速率，使得掩模在蚀刻步骤期间至少部分地溶解。 因此，可以容易地从半导体材料中去除掩模，并且在制造半导体部件期间就地施加附加层。

公开(公告)号：US06599843B2

公开(公告)日：2003-07-29

申请号：US09867290

申请日：2001-05-29

申请人： Horst Baumeister ,  Roland Gessner ,  Eberhard Veuhoff ,  Gundolf Wenger

发明人： Horst Baumeister ,  Roland Gessner ,  Eberhard Veuhoff ,  Gundolf Wenger

IPC分类号： H01L21302

CPC分类号： H01L21/0332 ,  H01L21/30612 ,  H01L21/3081 ,  Y10S438/945

摘要： Method of producing a structure for III-V semiconductor components in which a mask is applied to a sample in a masking step, characterized in that at least one mask material is a monocrystalline III-V semiconductor material. This makes possible an easy in-situ removal of the mask from the semiconductor material, which in turn makes possible the growing of additional layers.

公开(公告)号：US09793220B2

公开(公告)日：2017-10-17

申请号：US13729145

申请日：2012-12-28

申请人： Hans-Joachim Barth ,  Horst Baumeister ,  Peter Baumgartner ,  Philipp Riess ,  Jesenka Veledar Krueger

发明人： Hans-Joachim Barth ,  Horst Baumeister ,  Peter Baumgartner ,  Philipp Riess ,  Jesenka Veledar Krueger

IPC分类号： G01R31/3187 ,  G01R31/26 ,  H01L23/544 ,  H01L27/04 ,  H01L23/00 ,  H01L23/64

CPC分类号： H01L23/544 ,  H01L23/562 ,  H01L23/642 ,  H01L27/04 ,  H01L2224/16225

摘要： A capacitive sensor and measurement circuitry is described that may be able to reproducibly measure miniscule capacitances and variations thereof. The capacitance may vary depending upon local environmental conditions such as mechanical stress (e.g., warpage or shear stress), mechanical pressure, temperature, and/or humidity. It may be desirable to provide a capacitor integrated into a semiconductor chip that is sufficiently small and sensitive to accurately measure conditions expected to be experienced by a semiconductor chip.

公开(公告)号：US20100039128A1

公开(公告)日：2010-02-18

申请号：US12190745

申请日：2008-08-13

申请人： Alois Nitsch ,  Rainer Tilgner ,  Horst Baumeister

发明人： Alois Nitsch ,  Rainer Tilgner ,  Horst Baumeister

IPC分类号： G01R31/02 ,  G01R31/26

CPC分类号： G01N29/14 ,  G01N29/223 ,  G01N2291/2697 ,  G01R31/2831 ,  G01R31/2853 ,  H01L22/12

摘要： A method for detecting a crack in a semiconductor wafer, which includes an electrical device and a connecting pad electrically coupled with the electrical device, is described. The crack is detected by an acoustic detector being acoustically coupled to the semiconductor wafer during contacting the contacting pad with a probe.

摘要翻译： 描述了一种用于检测半导体晶片中的裂纹的方法，该方法包括电器件和与该电器件电连接的连接焊盘。 在接触垫与探针接触期间，通过声学耦合到半导体晶片的声学检测器来检测裂纹。

公开(公告)号：US20130240884A1

公开(公告)日：2013-09-19

申请号：US13729145

申请日：2012-12-28

申请人： Hans-Joachim Barth ,  Horst Baumeister ,  Peter Baumgartner ,  Philipp Riess ,  Jesenka Veledar Krueger

发明人： Hans-Joachim Barth ,  Horst Baumeister ,  Peter Baumgartner ,  Philipp Riess ,  Jesenka Veledar Krueger

IPC分类号： H01L23/544 ,  H01L27/04

CPC分类号： H01L23/544 ,  H01L23/562 ,  H01L23/642 ,  H01L27/04 ,  H01L2224/16225

摘要： A capacitive sensor and measurement circuitry is described that may be able to reproducibly measure miniscule capacitances and variations thereof. The capacitance may vary depending upon local environmental conditions such as mechanical stress (e.g., warpage or shear stress), mechanical pressure, temperature, and/or humidity. It may be desirable to provide a capacitor integrated into a semiconductor chip that is sufficiently small and sensitive to accurately measure conditions expected to be experienced by a semiconductor chip.

摘要翻译： 描述了可以可重复地测量微小电容及其变化的电容传感器和测量电路。 电容可以根据当地的环境条件（例如机械应力（例如翘曲或剪切应力）），机械压力，温度和/或湿度而变化。 可能需要提供集成到半导体芯片中的电容器，该电容器足够小并且敏感以准确地测量半导体芯片预期经历的条件。

公开(公告)号：US07973547B2

公开(公告)日：2011-07-05

申请号：US12190745

申请日：2008-08-13

申请人： Alois Nitsch ,  Rainer Tilgner ,  Horst Baumeister

发明人： Alois Nitsch ,  Rainer Tilgner ,  Horst Baumeister

IPC分类号： G01R31/308

CPC分类号： G01N29/14 ,  G01N29/223 ,  G01N2291/2697 ,  G01R31/2831 ,  G01R31/2853 ,  H01L22/12

摘要： A method for detecting a crack in a semiconductor wafer, which includes an electrical device and a connecting pad electrically coupled with the electrical device, is described. The crack is detected by an acoustic detector being acoustically coupled to the semiconductor wafer during contacting the contacting pad with a probe.

摘要翻译： 描述了一种用于检测半导体晶片中的裂纹的方法，该方法包括电器件和与该电器件电连接的连接焊盘。 在接触垫与探针接触期间，通过声学耦合到半导体晶片的声学检测器来检测裂纹。