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公开(公告)号：US20060243982A1
公开(公告)日：2006-11-02
申请号：US11380356
申请日：2006-04-26
IPC分类号： H01L31/0312
CPC分类号： H01L21/02658 , H01L21/02378 , H01L21/02381 , H01L21/02447 , H01L21/02527 , H01L21/0254 , H01L21/02664
摘要： A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.
摘要翻译： 提供了一种金刚石基板及其制造方法，其中在金刚石层的下表面上形成SiC层，以防止金刚石层在形成金刚石基板的过程之后变形，然后形成半导体层 在金刚石层上或直接形成在SiC层的表面上。 因此，通过SiC层减轻了金刚石膜层和半导体层之间的晶格失配，提高了半导体层的结晶质量，简化了金刚石基板的制造工艺，提高了性能和稳定性。
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公开(公告)号：US20070004325A1
公开(公告)日：2007-01-04
申请号：US11427215
申请日：2006-06-28
申请人： Hsiao-Kuo CHANG
发明人： Hsiao-Kuo CHANG
摘要： A method for manufacturing a diamond film is provided. The material with a low thermal decomposition point is used as a substrate. A buffer layer is formed on the substrate by coating or deposition, and then a diamond film is coated thereon, fitting the shape of the required diamond film. With the buffer layer, the coating or deposition uniformity of the diamond film is improved, and the problems such as thermal stress cracking and assembly damage are solved as well. During a subsequent process of forming the diamond film, the substrate is thermally decomposed due to a high temperature, such that the problems such as stripping and die loss are overcome.
摘要翻译： 提供了制造金刚石膜的方法。 具有低热分解点的材料用作基底。 通过涂覆或沉积在衬底上形成缓冲层，然后在其上涂覆金刚石膜，使其适合所需金刚石膜的形状。 利用缓冲层，金刚石膜的涂层或沉积均匀性得到改善，也解决了热应力开裂和组装损坏等问题。 在形成金刚石薄膜的后续工艺中，由于高温，基板被热分解，从而克服了剥离和模具损耗等问题。
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公开(公告)号：US20060243983A1
公开(公告)日：2006-11-02
申请号：US11380618
申请日：2006-04-27
IPC分类号： H01L31/0312
CPC分类号： H01L21/02115 , C30B25/18 , C30B29/04 , H01L21/02167 , H01L21/0217 , H01L21/02186 , H01L21/02194 , H01L21/02304 , H01L21/02439 , H01L21/02502 , H01L21/02527 , H01L21/3146 , H01L21/3148
摘要： A diamond substrate and a method for fabricating the same are provided, wherein a protection layer is formed on one surface of a diamond layer in the process of forming the diamond layer by chemical vapor deposition process, for reducing the deformation of the diamond layer. Thereby the deformation of diamond substrate falls within the range of permitted tolerance of deformation, so that the performance of the diamond substrate is enhanced.
摘要翻译： 提供一种金刚石基板及其制造方法，其中在通过化学气相沉积工艺形成金刚石层的过程中，在金刚石层的一个表面上形成保护层，以减少金刚石层的变形。 因此，金刚石基板的变形落在允许的变形公差的范围内，从而提高了金刚石基板的性能。
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