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公开(公告)号:US20080303539A1
公开(公告)日:2008-12-11
申请号:US11811135
申请日:2007-06-08
申请人: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
发明人: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
IPC分类号: G01R31/26
CPC分类号: G01R31/2884 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要: An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.
摘要翻译: 公开了一种提供增加的测试图案区域的集成电路参数测试线。 测试线包括衬底上的电介质层,电介质层上的多个探针焊盘,以及形成在探针焊盘下方空间中的测试线中的第一被测器件(DUT)。 测试线还可以包括第二DUT,其以覆盖配置形成在覆盖第一DUT的探针焊盘下方的空间中。 测试线还可以包括多边形形状的探针焊盘结构,其提供相邻探针焊盘之间增加的测试图案区域。
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公开(公告)号:US20080191205A1
公开(公告)日:2008-08-14
申请号:US11706940
申请日:2007-02-13
申请人: Hao-Yi Tsai , Shih-Hsun Hsu , Shih-Cheng Chang , Shang-Yun Hou , Hsien-Wei Chen , Chia-Lun Tsai , Benson Liu , Shin-Puu Jeng , Anbiarshy Wu
发明人: Hao-Yi Tsai , Shih-Hsun Hsu , Shih-Cheng Chang , Shang-Yun Hou , Hsien-Wei Chen , Chia-Lun Tsai , Benson Liu , Shin-Puu Jeng , Anbiarshy Wu
IPC分类号: H01L23/58
CPC分类号: H01L23/585 , H01L22/34 , H01L24/11 , H01L2224/0554 , H01L2224/05548 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05684 , H01L2224/45147 , H01L2224/48091 , H01L2924/00014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: A semiconductor structure includes a daisy chain adjacent to an edge of a semiconductor chip. The daisy chain includes a plurality of horizontal metal lines distributed in a plurality of metallization layers, wherein the horizontal metal lines are serially connected; a plurality of connecting pads in a same layer and electrically connecting the horizontal metal lines, wherein the connecting pads are physically separated from each other; and a plurality of vertical metal lines, each connecting one of the connecting pads to one of the horizontal metal lines, wherein one of the plurality of connecting pads is connected to one of the plurality of horizontal metal lines by only one of the plurality of vertical metal lines; and a seal ring adjacent and electrically disconnected from the daisy chain.
摘要翻译: 半导体结构包括与半导体芯片的边缘相邻的菊花链。 菊花链包括分布在多个金属化层中的多个水平金属线,其中水平金属线串联连接; 在相同层中的多个连接焊盘并且电连接水平金属线,其中连接焊盘在物理上彼此分离; 以及多个垂直金属线,每个将所述连接焊盘中的一个连接到所述水平金属线之一,其中所述多个连接焊盘中的一个连接焊盘中的一个连接焊盘仅通过所述多个垂直金属线中的一个垂直连接 金属线 以及与菊花链相邻且电气断开的密封环。
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公开(公告)号:US09601443B2
公开(公告)日:2017-03-21
申请号:US11706940
申请日:2007-02-13
申请人: Hao-Yi Tsai , Shih-Hsun Hsu , Shih-Cheng Chang , Shang-Yun Hou , Hsien-Wei Chen , Chia-Lun Tsai , Benson Liu , Shin-Puu Jeng , Anbiarshy Wu
发明人: Hao-Yi Tsai , Shih-Hsun Hsu , Shih-Cheng Chang , Shang-Yun Hou , Hsien-Wei Chen , Chia-Lun Tsai , Benson Liu , Shin-Puu Jeng , Anbiarshy Wu
CPC分类号: H01L23/585 , H01L22/34 , H01L24/11 , H01L2224/0554 , H01L2224/05548 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05684 , H01L2224/45147 , H01L2224/48091 , H01L2924/00014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: A semiconductor structure includes a daisy chain adjacent to an edge of a semiconductor chip. The daisy chain includes a plurality of horizontal metal lines distributed in a plurality of metallization layers, wherein the horizontal metal lines are serially connected; a plurality of connecting pads in a same layer and electrically connecting the horizontal metal lines, wherein the connecting pads are physically separated from each other; and a plurality of vertical metal lines, each connecting one of the connecting pads to one of the horizontal metal lines, wherein one of the plurality of connecting pads is connected to one of the plurality of horizontal metal lines by only one of the plurality of vertical metal lines; and a seal ring adjacent and electrically disconnected from the daisy chain.
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公开(公告)号:US20100164521A1
公开(公告)日:2010-07-01
申请号:US12704252
申请日:2010-02-11
申请人: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
发明人: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
IPC分类号: G01R31/02
CPC分类号: G01R31/2884 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要: An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.
摘要翻译: 公开了一种提供增加的测试图案区域的集成电路参数测试线。 测试线包括衬底上的电介质层,电介质层上的多个探针焊盘,以及形成在探针焊盘下方空间中的测试线中的第一被测器件(DUT)。 测试线还可以包括第二DUT,其以覆盖配置形成在覆盖第一DUT的探针焊盘下方的空间中。 测试线还可以包括多边形形状的探针焊盘结构,其提供相邻探针焊盘之间增加的测试图案区域。
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公开(公告)号:US20090091032A1
公开(公告)日:2009-04-09
申请号:US11868850
申请日:2007-10-08
申请人: Shih-Hsun Hsu , Hao-Yi Tsai , Benson Liu , Chia-Lun Tsai , Hsien-Wei Chen , Anbiarshy N.F. Wu , Shang-Yun Hou , Shin-Puu Jeng
发明人: Shih-Hsun Hsu , Hao-Yi Tsai , Benson Liu , Chia-Lun Tsai , Hsien-Wei Chen , Anbiarshy N.F. Wu , Shang-Yun Hou , Shin-Puu Jeng
IPC分类号: H01L23/48
CPC分类号: H01L24/06 , H01L22/32 , H01L24/05 , H01L2224/05552 , H01L2224/05599 , H01L2224/0603 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01076 , H01L2924/01082
摘要: A bonding pad design is disclosed that includes one or more pad groups on a semiconductor device. Each pad group is made up of two or more bonding pads that have an alternating orientation, such that adjacent bonding pads have their bond ball on opposite sides in relation to the adjacent bonding pad.
摘要翻译: 公开了一种焊盘设计,其包括半导体器件上的一个或多个焊盘组。 每个焊盘组由具有交替取向的两个或更多个焊盘组成,使得相邻的焊盘相对于相邻的焊盘在相对的两侧具有焊接球。
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公开(公告)号:US20080217735A1
公开(公告)日:2008-09-11
申请号:US11716206
申请日:2007-03-09
申请人: Hsien-Wei Chen , Hao-Yi Tsai , Shin-Puu Jeng , Shih-Hsun Hsu
发明人: Hsien-Wei Chen , Hao-Yi Tsai , Shin-Puu Jeng , Shih-Hsun Hsu
IPC分类号: H01L29/00
CPC分类号: H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要: An integrated circuit structure is provided. The integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a metal fuse in the dielectric layer; a dummy pattern adjacent the metal fuse; and a metal line in the dielectric layer, wherein a thickness of the metal fuse is substantially less than a thickness of the metal line.
摘要翻译: 提供集成电路结构。 集成电路结构包括半导体衬底; 半导体衬底上的电介质层; 电介质层中的金属保险丝; 与金属保险丝相邻的虚拟图案; 以及介电层中的金属线,其中金属熔丝的厚度基本上小于金属线的厚度。
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公开(公告)号:US20070015365A1
公开(公告)日:2007-01-18
申请号:US11181433
申请日:2005-07-14
申请人: Hsien-Wei Chen , Hao-Yi Tsai , Hsueh-Chung Chen , Shin-Puu Jeng , Jian-Hong Lin , Chih-Tao Lin , Shih-Hsun Hsu
发明人: Hsien-Wei Chen , Hao-Yi Tsai , Hsueh-Chung Chen , Shin-Puu Jeng , Jian-Hong Lin , Chih-Tao Lin , Shih-Hsun Hsu
IPC分类号: H01L21/461
CPC分类号: H01L21/3212 , H01L21/31053
摘要: In one embodiment, the disclosure relates to a method and apparatus for inserting dummy patterns in sparsely populated portions of a metal layer. The dummy pattern counters the effects of variations of pattern density in a semiconductor layout which can cause uneven post-polish film thickness. An algorithm according to one embodiment of the disclosure determines the size and location of the dummy patterns based on the patterns in the metal layer by first surrounding the metal structure with small dummy pattern and then filling any remaining voids with large dummy patterns.
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公开(公告)号:US08227917B2
公开(公告)日:2012-07-24
申请号:US11868850
申请日:2007-10-08
申请人: Shih-Hsun Hsu , Hao-Yi Tsai , Benson Liu , Chia-Lun Tsai , Hsien-Wei Chen , Anbiarshy N. F. Wu , Shang-Yun Hou , Shin-Puu Jeng
发明人: Shih-Hsun Hsu , Hao-Yi Tsai , Benson Liu , Chia-Lun Tsai , Hsien-Wei Chen , Anbiarshy N. F. Wu , Shang-Yun Hou , Shin-Puu Jeng
IPC分类号: H01L23/48
CPC分类号: H01L24/06 , H01L22/32 , H01L24/05 , H01L2224/05552 , H01L2224/05599 , H01L2224/0603 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01076 , H01L2924/01082
摘要: A bonding pad design is disclosed that includes one or more pad groups on a semiconductor device. Each pad group is made up of two or more bonding pads that have an alternating orientation, such that adjacent bonding pads have their bond ball on opposite sides in relation to the adjacent bonding pad.
摘要翻译: 公开了一种焊盘设计,其包括半导体器件上的一个或多个焊盘组。 每个焊盘组由具有交替取向的两个或更多个焊盘组成,使得相邻的焊盘相对于相邻的焊盘在相对的两侧具有焊接球。
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公开(公告)号:US08125233B2
公开(公告)日:2012-02-28
申请号:US12704252
申请日:2010-02-11
申请人: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
发明人: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
IPC分类号: G01R31/26
CPC分类号: G01R31/2884 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要: An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.
摘要翻译: 公开了一种提供增加的测试图案区域的集成电路参数测试线。 测试线包括衬底上的电介质层,电介质层上的多个探针焊盘,以及形成在探针焊盘下方空间中的测试线中的第一被测器件(DUT)。 测试线还可以包括第二DUT,其以覆盖配置形成在覆盖第一DUT的探针焊盘下方的空间中。 测试线还可以包括多边形形状的探针焊盘结构,其提供相邻探针焊盘之间增加的测试图案区域。
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公开(公告)号:US08749020B2
公开(公告)日:2014-06-10
申请号:US11716206
申请日:2007-03-09
申请人: Hsien-Wei Chen , Hao-Yi Tsai , Shin-Puu Jeng , Shih-Hsun Hsu
发明人: Hsien-Wei Chen , Hao-Yi Tsai , Shin-Puu Jeng , Shih-Hsun Hsu
IPC分类号: H01L29/00
CPC分类号: H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要: An integrated circuit structure is provided. The integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a metal fuse in the dielectric layer; a dummy pattern adjacent the metal fuse; and a metal line in the dielectric layer, wherein a thickness of the metal fuse is substantially less than a thickness of the metal line.
摘要翻译: 提供集成电路结构。 集成电路结构包括半导体衬底; 半导体衬底上的电介质层; 电介质层中的金属保险丝; 与金属保险丝相邻的虚拟图案; 以及介电层中的金属线,其中金属熔丝的厚度基本上小于金属线的厚度。
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