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    DICING-FREE LED FABRICATION
    2.
    发明申请
    DICING-FREE LED FABRICATION 有权
    免费LED制造

    公开(公告)号：US20120088322A1

    公开(公告)日：2012-04-12

    申请号：US12900663

    申请日：2010-10-08

    申请人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Gordon Kuo

    发明人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Gordon Kuo

    IPC分类号： H01L33/60 ,  H01L21/302

    CPC分类号： H01L33/0079 ,  H01L21/0272 ,  H01L21/0331 ,  H01L33/0066 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/38 ,  H01L33/60 ,  H01L51/0016 ,  H01L2933/0016 ,  H01L2933/0058

    摘要： Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components.

    摘要翻译： 提供一种制造发光二极管（LED）装置的方法。 该方法包括提供具有相反的第一和第二侧面的基板。 在衬底的第一侧上形成半导体层。 该方法包括在半导体层上形成光致抗蚀剂层。 该方法包括将光致抗蚀剂层图案化成多个光刻胶组件。 光致抗蚀剂组件由开口分开。 该方法包括用多个导热部件填充开口。 该方法包括使用从第二侧对基板执行的辐射处理将半导体层分离成多个管芯。 衬底的每个第一区域与导电组件中的一个对准。

    Dicing-free LED fabrication
    3.
    发明授权
    Dicing-free LED fabrication 有权
    无切割LED制造

    公开(公告)号：US08912033B2

    公开(公告)日：2014-12-16

    申请号：US12900663

    申请日：2010-10-08

    申请人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Gordon Kuo

    发明人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Gordon Kuo

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/0079 ,  H01L21/0272 ,  H01L21/0331 ,  H01L33/0066 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/38 ,  H01L33/60 ,  H01L51/0016 ,  H01L2933/0016 ,  H01L2933/0058

    摘要： Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components.

    摘要翻译： 提供一种制造发光二极管（LED）装置的方法。 该方法包括提供具有相反的第一和第二侧面的基板。 在衬底的第一侧上形成半导体层。 该方法包括在半导体层上形成光致抗蚀剂层。 该方法包括将光致抗蚀剂层图案化成多个光刻胶组件。 光致抗蚀剂组件由开口分开。 该方法包括用多个导热部件填充开口。 该方法包括使用从第二侧对基板执行的辐射处理将半导体层分离成多个管芯。 衬底的每个第一区域与导电组件中的一个对准。

    Light emitting device
    4.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08476659B2

    公开(公告)日：2013-07-02

    申请号：US12837227

    申请日：2010-07-15

    申请人： Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    发明人： Hsing-Kuo Hsia ,  Hung-Weng Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

    摘要： The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

    摘要翻译： 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。

    LIGHT EMITTING DEVICE
    5.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20120012871A1

    公开(公告)日：2012-01-19

    申请号：US12837227

    申请日：2010-07-15

    申请人： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    发明人： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    IPC分类号： H01L33/10 ,  H01L21/66 ,  H01L21/50

    CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

    摘要： The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

    摘要翻译： 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。