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44 条记录 (耗时 0.045 秒)

    Polypeptide TF1 for Inhibiting Type 2 Shiga Toxin Activity, Encoding Gene for Same and Use Thereof
    2.
    发明申请
    Polypeptide TF1 for Inhibiting Type 2 Shiga Toxin Activity, Encoding Gene for Same and Use Thereof 有权
    用于抑制2型志贺毒素活性的多肽TF1，编码与其相同的基因

    公开(公告)号：US20130210750A1

    公开(公告)日：2013-08-15

    申请号：US13814689

    申请日：2011-09-09

    申请人： Hui Wang ,  Tao Li ,  Qin Wang ,  Wei Tu ,  Xiaojun Hou

    发明人： Hui Wang ,  Tao Li ,  Qin Wang ,  Wei Tu ,  Xiaojun Hou

    IPC分类号： C07K7/08

    CPC分类号： C07K7/08 ,  A61K38/00 ,  C07K14/25 ,  Y02A50/471 ,  Y02A50/473 ,  Y02A50/475

    摘要： The present invention provides a polypeptide TF1 for inhibiting type-2 Shiga-toxin activity, an encoding gene for the same and use thereof. The present polypeptide is named TF1 (also known as P1); its amino acid sequence is shown in Sequence 1 in the sequence list. The polypeptide P1 can be prepared into medicine for preventing and/or treating diseases caused by type-2 Shiga toxin or the pathogens which produce type-2 Shiga toxin.

    摘要翻译： 本发明提供了用于抑制2型志贺毒素活性的多肽TF1，其编码基因及其应用。 本发明多肽称为TF1（也称为P1）; 其氨基酸序列显示在序列表中的序列1中。 多肽P1可以制备成用于预防和/或治疗由2型志贺毒素引起的疾病或产生2型志贺毒素的病原体的药物。

    Sulfated psyllium derivative for reducing the risk of chronic human diseases and method for preparing the same
    4.
    发明授权
    Sulfated psyllium derivative for reducing the risk of chronic human diseases and method for preparing the same 有权
    用于降低慢性人类疾病风险的硫酸化车前子衍生物及其制备方法

    公开(公告)号：US09206118B2

    公开(公告)日：2015-12-08

    申请号：US12847747

    申请日：2010-07-30

    申请人： Liangli Yu ,  Wei Liu ,  Zhouhong Xie ,  Qin Wang ,  Boce Zhang

    发明人： Liangli Yu ,  Wei Liu ,  Zhouhong Xie ,  Qin Wang ,  Boce Zhang

    IPC分类号： A61K36/68 ,  C07C303/00 ,  C07C303/26 ,  A23L1/30 ,  C07C303/44

    CPC分类号： C07C303/26 ,  A23L33/105 ,  A23V2002/00 ,  C07C303/44 ,  A23V2250/5074

    摘要： The invention is directed to a method for preparing sulfated psyllium derivatives for use to reduce the risk of chronic human diseases. The sulfation of psyllium was carried out with sulfur, trioxide, pyridine, dimethylformamide and chlorosulfonic acid in pyridine. Six total sulfated psyllium derivatives named SP1, SP2, SP3, SPR1, SPR2, and SPR3 were prepared and evaluated for their morphological and rheological properties, and bile acid-binding abilities. The invention offers a novel approach to obtaining sulfated psyllium derivatives for use in functional foods or supplemental and pharmaceutical products to increase health benefits.

    摘要翻译： 本发明涉及制备用于降低慢性人类疾病风险的硫酸化欧车前衍生物的方法。 在吡啶中用硫，三氧化物，吡啶，二甲基甲酰胺和氯磺酸进行欧车前的硫酸化反应。 制备了名为SP1，SP2，SP3，SPR1，SPR2和SPR3的六种总硫酸化车前子，其形态和流变学特性以及胆汁酸结合能力进行了评估。 本发明提供了一种新颖的方法来获得用于功能食品或补充和药物产品中的硫酸化欧车前衍生物以增加健康益处。

    Methods and Apparatus for Determination of Halohydrocarbons
    5.
    发明申请
    Methods and Apparatus for Determination of Halohydrocarbons 有权
    用于测定卤代烃的方法和装置

    公开(公告)号：US20130029427A1

    公开(公告)日：2013-01-31

    申请号：US13640312

    申请日：2011-04-14

    申请人： Harmesh K. Saini ,  Michael J. West ,  Qin Wang ,  James Garvey ,  Paul Rand ,  Marc Angelo ,  David Johnston ,  Robert Ormond ,  Ye Han

    发明人： Harmesh K. Saini ,  Michael J. West ,  Qin Wang ,  James Garvey ,  Paul Rand ,  Marc Angelo ,  David Johnston ,  Robert Ormond ,  Ye Han

    IPC分类号： G01N21/75

    CPC分类号： G01N21/78 ,  G01N21/75 ,  G01N33/18 ,  G01N33/1826 ,  Y10T436/19 ,  Y10T436/193333

    摘要： A real-time, on-line method and analytical system for determining halohydrocarbons in water which operate by (1) extracting on-line samples; (2) purging volatile halohydrocarbons from the water (e.g., with air or nitrogen); (3) carrying the purge gas containing the analytes of interest over a porous surface where the analytes are adsorbed; (4) recovering the analytes from the porous surface with heat (thermal desorption) or solvent (solvent elution) to drive the analytes into an organic chemical mixture; (5) generating an optical change (e.g., color change) in dependence upon a reaction involving the analytes and a pyridine derivative; and (6) measuring optical characteristics associated with the reaction to quantify the volatile halogenated hydrocarbon concentration.

    摘要翻译： 一种用于测定水中卤代烃的实时在线方法和分析系统，其操作为（1）提取在线样品; （2）从水中（例如用空气或氮气）吹扫挥发性卤代烃; （3）在分析物被吸附的多孔表面上携带含有感兴趣分析物的吹扫气体; （4）用热（热解吸）或溶剂（溶剂洗脱）从多孔表面回收分析物，以将分析物驱动到有机化学混合物中; （5）根据涉及分析物的反应和吡啶衍生物产生光学变化（例如，颜色变化）; 和（6）测量与反应相关的光学特性以量化挥发性卤代烃浓度。

    Three-dimensional multi-bit non-volatile memory and method for manufacturing the same
    8.
    发明授权
    Three-dimensional multi-bit non-volatile memory and method for manufacturing the same 有权
    三维多位非易失性存储器及其制造方法

    公开(公告)号：US08705274B2

    公开(公告)日：2014-04-22

    申请号：US13376925

    申请日：2011-06-30

    申请人： Ming Liu ,  Chenxi Zhu ,  Zongliang Huo ,  Feng Yan ,  Qin Wang ,  Shibing Long

    发明人： Ming Liu ,  Chenxi Zhu ,  Zongliang Huo ,  Feng Yan ,  Qin Wang ,  Shibing Long

    IPC分类号： G11C16/04 ,  H01L21/336

    CPC分类号： H01L27/11582

    摘要： The present disclosure relates to the field of microelectronics manufacture and memories. A three-dimensional multi-bit non-volatile memory and a method for manufacturing the same are disclosed. The memory comprises a plurality of memory cells constituting a memory array. The memory array may comprise: a gate stack structure; periodically and alternately arranged gate stack regions and channel region spaces; gate dielectric layers for discrete charge storage; periodically arranged channel regions; source doping regions and drain doping regions symmetrically arranged to each other; bit lines led from the source doping regions and the drain doping regions; and word lines led from the gate stack regions. The gate dielectric layers for discrete charge storage can provide physical storage spots to achieve single-bit or multi-bit operations, so as to achieve a high storage density. According to the present disclosure, the localized charge storage characteristic of the charge trapping layer and characteristics such as a longer effective channel length and a higher density of a vertical memory structure are utilized, to provide multiple storage spots in a single memory cell. Therefore, the storage density is improved while good performances such as high speed are ensured.

    摘要翻译： 本公开涉及微电子制造领域和存储器。 公开了一种三维多位非易失性存储器及其制造方法。 存储器包括构成存储器阵列的多个存储单元。 存储器阵列可以包括：栅极堆叠结构; 定期和交替布置的栅极堆叠区域和沟道区域空间; 用于离散电荷存储的栅极电介质层; 定期布置的通道区域; 源极掺杂区域和漏极掺杂区域彼此对称布置; 源极掺杂区域和漏极掺杂区域引出的位线; 和从栅极堆栈区域引出的字线。 用于离散电荷存储的栅极电介质层可以提供物理存储点以实现单位或多位操作，从而实现高存储密度。 根据本公开，利用电荷俘获层的局部电荷存储特性以及垂直存储器结构的较长有效沟道长度和较高密度等特征，以在单个存储单元中提供多个存储点。 因此，存储密度得到改善，同时保证了诸如高速的良好性能。

    Termination for superjunction VDMOSFET
    9.
    发明授权
    Termination for superjunction VDMOSFET 有权
    端接VDMOSFET

    公开(公告)号：US08482064B2

    公开(公告)日：2013-07-09

    申请号：US13493505

    申请日：2012-06-11

    申请人： Yangbo Yi ,  Haisong Li ,  Qin Wang ,  Ping Tao ,  Lixin Zhang

    发明人： Yangbo Yi ,  Haisong Li ,  Qin Wang ,  Ping Tao ,  Lixin Zhang

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696

    摘要： A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns and N-type silicon columns are formed in the N-type silicon epitaxial layer, alternately arranged; a continuous silicon oxide layer is disposed on a part of silicon surface in the termination; structures that block the drift of mobile ions (several discontinuous silicon oxide layers arranged at intervals) are disposed on the other part of silicon surface in the termination. The structures that block the drift of mobile ions disposed in the termination region are able to effectively prevent movement of the mobile ions and improve the capability of the power device against the contamination induced by the mobile ions.

    摘要翻译： 硅超结VDMOSFET的终端包括也用作漏极区的重掺杂N型硅衬底; 漏极金属配置在重掺杂N型硅衬底的背表面上; 在重掺杂的N型硅衬底上设置N型硅外延层; 交替布置在N型硅外延层中形成P型硅柱和N型硅柱; 连续的氧化硅层设置在终端的硅表面的一部分上; 阻止移动离子漂移的结构（间隔布置的几个不连续的氧化硅层）设置在终端的硅表面的另一部分上。 阻止设置在终端区域中的移动离子的漂移的结构能够有效地防止移动离子的移动，并提高功率器件抵抗由移动离子引起的污染的能力。