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    Inspection apparatus, lithographic apparatus, and device manufacturing method
    4.
    发明授权
    Inspection apparatus, lithographic apparatus, and device manufacturing method 有权
    检验仪器，光刻设备及器件制造方法

    公开(公告)号：US09285687B2

    公开(公告)日：2016-03-15

    申请号：US13608069

    申请日：2012-09-10

    申请人： Stanislav Y Smirnov ,  Lev Ryzhikov ,  Eric Brian Catey ,  Adel Joobeur ,  David Heald ,  Yevgeniy Konstantinovich Shmarev ,  Richard Jacobs

    发明人： Stanislav Y Smirnov ,  Lev Ryzhikov ,  Eric Brian Catey ,  Adel Joobeur ,  David Heald ,  Yevgeniy Konstantinovich Shmarev ,  Richard Jacobs

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70625 ,  G01N21/956 ,  G03F7/70633

    摘要： An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.

    摘要翻译： 检查装置包括照明系统，其接收第一光束并产生来自第一光束的第二和第三光束;以及反射折射物镜，其引导第二光束从晶片反射。 第一传感器检测由反射的第二光束产生的第一图像。 折射物镜引导第三光束从晶片反射，第二传感器检测由反射的第三光束产生的第二图像。 第一张和第二张图像可用于CD测量。 第二光束可具有从约200nm至约425nm的光谱范围，并且第三光束可具有约425nm至约850nm的光谱范围。 可以提供第三传感器，其检测由从晶片反射的第三光束产生的第三图像。 第三个图像可用于OV测量。

    Inspection Apparatus, Lithographic Apparatus, and Device Manufacturing Method
    5.
    发明申请
    Inspection Apparatus, Lithographic Apparatus, and Device Manufacturing Method 有权
    检验装置，平版印刷装置和装置制造方法

    公开(公告)号：US20130083306A1

    公开(公告)日：2013-04-04

    申请号：US13608069

    申请日：2012-09-10

    申请人： Stanislav Y. Smirnov ,  Lev Ryzhikov ,  Eric Brian Catey ,  Adel Joobeur ,  David Heald ,  Yevgeniy Konstantinovich Shmarev ,  Richard Jacobs

    发明人： Stanislav Y. Smirnov ,  Lev Ryzhikov ,  Eric Brian Catey ,  Adel Joobeur ,  David Heald ,  Yevgeniy Konstantinovich Shmarev ,  Richard Jacobs

    IPC分类号： G01B11/02 ,  G03B27/54 ,  G02B17/08

    CPC分类号： G03F7/70625 ,  G01N21/956 ,  G03F7/70633

    摘要： An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.

    摘要翻译： 检查装置包括照明系统，其接收第一光束并产生来自第一光束的第二和第三光束;以及反射折射物镜，其引导第二光束从晶片反射。 第一传感器检测由反射的第二光束产生的第一图像。 折射物镜引导第三光束从晶片反射，第二传感器检测由反射的第三光束产生的第二图像。 第一张和第二张图像可用于CD测量。 第二光束可具有从约200nm至约425nm的光谱范围，并且第三光束可具有约425nm至约850nm的光谱范围。 可以提供第三传感器，其检测由从晶片反射的第三光束产生的第三图像。 第三个图像可用于OV测量。

    Optical integrators for lithography systems and methods
    6.
    发明申请
    Optical integrators for lithography systems and methods 有权
    用于光刻系统和方法的光学积分器

    公开(公告)号：US20080019008A1

    公开(公告)日：2008-01-24

    申请号：US11488174

    申请日：2006-07-18

    申请人： Lev Ryzhikov ,  Adel Joobeur ,  Yevgeniy Konstantinovich Shmarev

    发明人： Lev Ryzhikov ,  Adel Joobeur ,  Yevgeniy Konstantinovich Shmarev

    IPC分类号： G02B27/10

    CPC分类号： G03F7/70075

    摘要： An optical integrator having a first surface and a second surface that is used in a lithographic apparatus to modify light. The first surface is reflective, defines a volume, and is configured to be disposed in an optical illumination system along an optical axis, to surround the optical axis, and to reflect a light along a path incident upon the first surface. The second surface is disposed in the volume and has a first section of the second surface that is semi-reflective and is configured to reflect a first portion of a light along a path incident upon the first section of the second surface and to transmit a second portion of the light along the path incident upon the first section of the second surface. The second surface increases the number of reflections of the light to increase the uniformity of the intensity distribution of the light.

    摘要翻译： 具有第一表面和第二表面的光学积分器，其用于光刻设备中以修改光。 第一表面是反射的，限定了一个体积，并被配置为沿光轴布置在光学照明系统中，以围绕光轴，并且沿着入射在第一表面上的路径反射光。 第二表面设置在体积中并且具有半反射的第二表面的第一部分，并且被配置为沿着入射在第二表面的第一部分上的路径反射光的第一部分，并且透射第二表面 沿着入射到第二表面的第一部分的路径的光的一部分。 第二表面增加了光的反射数以增加光的强度分布的均匀性。

    EUV mask inspection system
    10.
    发明授权
    EUV mask inspection system 有权
    EUV面罩检测系统

    公开(公告)号：US09046754B2

    公开(公告)日：2015-06-02

    申请号：US12605627

    申请日：2009-10-26

    申请人： Harry Sewell ,  Eric Brian Catey ,  Adel Joobeur ,  Yevgeniy Konstantinovich Shmarev

    发明人： Harry Sewell ,  Eric Brian Catey ,  Adel Joobeur ,  Yevgeniy Konstantinovich Shmarev

    IPC分类号： G03B27/52 ,  G03B27/54 ,  G03B27/62 ,  G03B27/32 ,  G03F7/20 ,  G03B13/26 ,  G01N21/956

    CPC分类号： G03B27/54 ,  G01N2021/95676 ,  G03F7/70208 ,  G03F7/70275 ,  G03F7/7085 ,  G03F7/70991

    摘要： Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.

    摘要翻译： 公开了用于EUV掩模检查的装置，方法和光刻系统。 EUV掩模检查系统可以包括EUV照明源，光学系统和图像传感器。 EUV照明源可以是独立的照明系统或集成到光刻系统中，其中EUV照明源可被配置为将EUV辐射束照射到掩模的目标部分上。 光学系统可以被配置为从掩模的目标部分接收反射的EUV辐射束的至少一部分。 此外，图像传感器可以被配置为检测对应于反射的EUV辐射束的该部分的空间图像。 EUV掩模检查系统还可以包括被配置为分析掩模缺陷的空中图像的数据分析装置。