公开(公告)号：US07071032B2

公开(公告)日：2006-07-04

申请号：US10431275

申请日：2003-05-07

申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Fu-Tien Weng

发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Fu-Tien Weng

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/6836 ,  H01L21/78 ,  H01L27/14683 ,  H01L2221/68327

摘要： A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

摘要翻译： 提供了一种新的方法，在将晶片分离成单独的芯片的过程之前处理晶片。 已经在其上形成CMOS图像传感器装置的晶片的第一表面涂覆有不溶于水的材料层。 通过使晶片的第二表面与带接触而将晶片附接到带。 通过接近晶片的第一表面并通过首先穿过已经涂覆在晶片的第一表面上的材料层，然后通过晶片锯切，停止在带的表面，将晶片分离。 将彻底的水冲洗施加到单片晶片的表面，接着进行晶片清洁以应用特定的化学品用于此目的。 单片模具现在从胶带中取出并通过将模具安装，引线接合，将模具包围在模具化合物中并标记包装件的步骤进一步处理。

公开(公告)号：US06878642B1

公开(公告)日：2005-04-12

申请号：US09679514

申请日：2000-10-06

申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Kuo-Liang Lu

发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Kuo-Liang Lu

IPC分类号： H01L21/311 ,  H01L21/31

CPC分类号： H01L21/31116 ,  H01L23/3171 ,  H01L2224/11472

摘要： A new method to form passivation openings in the manufacture of an integrated circuit device is achieved. The passivation openings have gradually sloping sidewalls that allow a protective tape to be completely removed without leaving adhesive residue. A semiconductor substrate is provided. A passivation layer is deposited. An organic photoresist layer is deposited overlying the passivation layer. The organic photoresist layer is patterned to expose the passivation layer in areas where passivation openings are planned. The organic photoresist layer is reflowed to create gradually sloping sidewalls on the organic photoresist layer. The passivation layer is etched through to from the passivation openings. The passivation openings are thereby formed with gradually sloping sidewalls. The organic photoresist layer is stripped away. A protective tape is applied overlying the passivation layer and the passivation openings. The protective tape is removed. The gradually sloping sidewalls on the passivation openings allow the protective tape to be completely removed without leaving adhesive residue in the manufacture of the integrated circuit device.

摘要翻译： 实现了在制造集成电路器件中形成钝化开口的新方法。 钝化开口具有逐渐倾斜的侧壁，其允许完全去除保护带而不留下粘合剂残留物。 提供半导体衬底。 沉积钝化层。 沉积在钝化层上的有机光致抗蚀剂层。 有机光致抗蚀剂层被图案化以在钝化开口被计划的区域中露出钝化层。 有机光致抗蚀剂层被回流以在有机光致抗蚀剂层上产生逐渐倾斜的侧壁。 从钝化开口蚀刻钝化层。 因此钝化开口由逐渐倾斜的侧壁形成。 剥离有机光致抗蚀剂层。 施加保护带覆盖钝化层和钝化开口。 取下保护胶带。 钝化开口上逐渐倾斜的侧壁允许保护带被完全去除，而不会在集成电路器件的制造中留下残留粘合剂。

公开(公告)号：US06849533B2

公开(公告)日：2005-02-01

申请号：US10354697

申请日：2003-01-29

申请人： Chih-Kung Chang ,  Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Fu-Tien Wong ,  Chin-Chen Kuo ,  Chung-Sheng Hsiung ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Po-Wen Lin ,  Te-Fu Tseng

发明人： Chih-Kung Chang ,  Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Fu-Tien Wong ,  Chin-Chen Kuo ,  Chung-Sheng Hsiung ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Po-Wen Lin ,  Te-Fu Tseng

IPC分类号： H01L21/44 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/00

摘要： A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.

摘要翻译： 用于制造微电子产品的方法提供了在接合焊盘和地形特征上形成平坦化层，两者均形成在衬底上横向分离。 平坦化层在接合焊盘上形成为具有减小的厚度，使得其可以容易地蚀刻以暴露接合焊盘，同时使用形成在地形特征上但不在接合焊盘上的附加层作为掩模。 该方法对于形成具有减弱的键合垫腐蚀的滤色器传感器图像阵列光电产品特别有用。

公开(公告)号：US06759276B1

公开(公告)日：2004-07-06

申请号：US10209149

申请日：2002-07-30

申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan

发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan

IPC分类号： H01L2144

CPC分类号： H01L27/14632 ,  H01L27/14627 ,  H01L27/14687

摘要： A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is singulated by sawing through the layer of material that has been coated over the surface of the wafer and by then sawing through the wafer. The singulated die is then further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

摘要翻译： 提供了一种新的方法，在将晶片分离成单独的芯片的过程之前处理晶片。 已经在其上形成CMOS图像传感器装置的晶片的表面涂覆有不溶于水的材料层。 通过锯切已经涂覆在晶片表面上的材料层，然后通过晶片锯切将晶片分割。 然后通过将模具安装，引线接合，将模具包围在模具化合物中并标记包装件的步骤进一步处理单模模具。

公开(公告)号：US06395576B1

公开(公告)日：2002-05-28

申请号：US09593537

申请日：2000-06-14

申请人： Chih-Kung Chang ,  Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Junq Chang

发明人： Chih-Kung Chang ,  Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Junq Chang

IPC分类号： H01L2100

CPC分类号： H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627

摘要： Formation of integrated color filters for gain-ratio balanced semiconductor array imagers using a spectrophotometric feedback control loop to adjust layer thickness during the deposition process is disclosed. The fabrication sequence of G/R/B conventionally used in Prior Art has been changed to B/R/G or B/G/R to enable the process to adapt to yielding specified color gain-ratio values without the need for integrated circuit redesign. A high efficiency color filter process is demonstrated wherein the additional neutral-density attenuator layers and/or spacer layers required in Prior Art fabrication methods are eliminated. The disclosed process is shown to enable high-precision thickness control of the color filter layers. Blue coating lift-off problems and the steric effect associated with successive depositions of color layers having step-height variations are eliminated. Statistical process control (SPC) is optimized by calibration of the color balance gain-ratio using the product photodiode arrays and amplifier integrated circuits with a real-time spectrophotometric feedback control-loop during the dye or pigment layer deposition process.

摘要翻译： 公开了用于增益比平衡的半导体阵列成像器的集成滤色器的形成，其使用分光光度反馈控制环来在沉积过程中调节层厚度。 现有技术中常规使用的G / R / B的制造顺序已经改变为B / R / G或B / G / R，以使该工艺适应于产生指定的颜色增益比值，而不需要集成电路重新设计 。 证明了高效率滤色器工艺，其中消除了现有技术制造方法中所需的附加中性密度衰减器层和/或间隔层​​。 所公开的过程被示出为使得能够对滤色器层进行高精度的厚度控制。 消除蓝色涂层剥离问题和与具有阶跃高度变化的彩色层的连续沉积相关的空间效应。 通过使用产品光电二极管阵列和放大器集成电路通过在染料或颜料层沉积过程中具有实时分光光度反馈控制环来校准色平衡增益比来优化统计过程控制（SPC）。

公开(公告)号：US07009772B2

公开(公告)日：2006-03-07

申请号：US10957920

申请日：2004-10-04

申请人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Juno Chang ,  Kuo-Liang Lu

发明人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Juno Chang ,  Kuo-Liang Lu

IPC分类号： G02B27/10

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14623 ,  H01L31/02327

摘要： A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectric fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for low-cost, high volume manufacturing of CMOS and CCD color video cameras.

摘要翻译： 在微透镜层之上施加具有有效平面顶表面和特定光学和材料特性的透光率外涂层以延长焦距并增强半导体阵列彩色成像装置的长焦距微透镜的性能。 公开了实现优化的长焦距微透镜性能的几何光学设计因子和微电子制造序列。 示出了本发明中教导的自适应过程的主要优点，以实现对过程和材料变化的实时补偿调整。 外涂层工艺可实现简化的单层集成微透镜光学器件，用于CMOS和CCD彩色摄像机的低成本，大批量制造。

公开(公告)号：US20050041296A1

公开(公告)日：2005-02-24

申请号：US10957920

申请日：2004-10-04

申请人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Juno Chang ,  Kuo-Liang Lu

发明人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Juno Chang ,  Kuo-Liang Lu

IPC分类号： G02B27/10 ,  H01L21/00 ,  H01L31/0203 ,  H01L31/0232

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14623 ,  H01L31/02327

摘要： A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectric fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for low-cost, high volume manufacturing of CMOS and CCD color video cameras.

摘要翻译： 在微透镜层之上施加具有有效平面顶表面和特定光学和材料特性的透光率外涂层以延长焦距并增强半导体阵列彩色成像装置的长焦距微透镜的性能。 公开了实现优化的长焦距微透镜性能的几何光学设计因子和微电子制造序列。 示出了本发明中教导的自适应过程的主要优点，以实现对过程和材料变化的实时补偿调整。 外涂层工艺可实现简化的单层集成微透镜光学器件，用于CMOS和CCD彩色摄像机的低成本，大批量制造。

公开(公告)号：US06821810B1

公开(公告)日：2004-11-23

申请号：US09633644

申请日：2000-08-07

申请人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Juno Chang ,  Kuo-Liang Lu

发明人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii-Juno Chang ,  Kuo-Liang Lu

IPC分类号： H01L2100

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14623 ,  H01L31/02327

摘要： A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectronic fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for lowcost, high volume manufacturing of CMOS and CCD color video cameras.

摘要翻译： 在微透镜层之上施加具有有效平面顶表面和特定光学和材料特性的透光率外涂层以延长焦距并增强半导体阵列彩色成像装置的长焦距微透镜的性能。 公开了实现优化的长焦距微透镜性能的几何光学设计因子和微电子制造序列。 示出了本发明中教导的自适应过程的主要优点，以实现对过程和材料变化的实时补偿调整。 外涂层工艺使简化的单层集成微透镜光学器件用于CMOS和CCD彩色摄像机的低成本，大批量制造。

公开(公告)号：US06582988B1

公开(公告)日：2003-06-24

申请号：US09902894

申请日：2001-07-12

申请人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii Junq Chang

发明人： Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Bii Junq Chang

IPC分类号： H01L2100

CPC分类号： G02B3/0018 ,  G02B3/0056 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02327

摘要： The present invention features a method for forming micro lens arrays on light-sensitive or light-emitting semiconductor structures. A unique oxygen plasma etch “descum” step is performed prior to the lens reflow hardbake. In addition, a photo-sensitive planarization layer place immediately atop a color filter layer results in fewer process steps. The micro lens array thus formed has a minimal number of merged or collapsed lenses and residue on bond pad areas is significantly reduced.

摘要翻译： 本发明的特征在于在光敏或发光半导体结构上形成微透镜阵列的方法。 在镜头回流硬烘烤之前执行独特的氧等离子体蚀刻“除尘”步骤。 另外，在彩色滤光层之上立即放置的光敏平面化层导致较少的工艺步骤。 如此形成的微透镜阵列具有最少数量的合并或折叠的透镜，并且焊接区域上的残留物显着减少。

公开(公告)号：US06623912B1

公开(公告)日：2003-09-23

申请号：US09867094

申请日：2001-05-30

申请人： Kai-Ming Ching ,  Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Kuo-Liang Lu

发明人： Kai-Ming Ching ,  Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Kuo-Liang Lu

IPC分类号： G03F730

CPC分类号： H01L21/76885 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2224/05599

摘要： A method of clearing photoresist on a wafer edge, including the following steps. A wafer having a upper exposed conductive layer is provided. The wafer having a center, an edge and a ring-shaped area proximate the wafer edge. A photoresist layer is formed upon the exposed conductive layer. The photoresist layer is removed from within the ring-shaped area by a rinse process to expose the conductive layer within the ring-shaped area. An oxygen diffusion barrier layer is formed over the photoresist layer.

摘要翻译： 一种在晶片边缘上清除光致抗蚀剂的方法，包括以下步骤。 提供具有上暴露导电层的晶片。 该晶片具有靠近晶片边缘的中心，边缘和环形区域。 在暴露的导电层上形成光致抗蚀剂层。 通过漂洗工艺从环形区域内去除光致抗蚀剂层，以暴露环形区域内的导电层。 在光致抗蚀剂层上形成氧扩散阻挡层。