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23 条记录 (耗时 0.048 秒)

    Material to improve image sensor yield during wafer sawing
    1.
    发明授权
    Material to improve image sensor yield during wafer sawing 失效
    材料可以提高晶圆锯切时的图像传感器产量

    公开(公告)号：US07071032B2

    公开(公告)日：2006-07-04

    申请号：US10431275

    申请日：2003-05-07

    申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Fu-Tien Weng

    发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Fu-Tien Weng

    IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC分类号： H01L21/6836 ,  H01L21/78 ,  H01L27/14683 ,  H01L2221/68327

    摘要： A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

    摘要翻译： 提供了一种新的方法，在将晶片分离成单独的芯片的过程之前处理晶片。 已经在其上形成CMOS图像传感器装置的晶片的第一表面涂覆有不溶于水的材料层。 通过使晶片的第二表面与带接触而将晶片附接到带。 通过接近晶片的第一表面并通过首先穿过已经涂覆在晶片的第一表面上的材料层，然后通过晶片锯切，停止在带的表面，将晶片分离。 将彻底的水冲洗施加到单片晶片的表面，接着进行晶片清洁以应用特定的化学品用于此目的。 单片模具现在从胶带中取出并通过将模具安装，引线接合，将模具包围在模具化合物中并标记包装件的步骤进一步处理。

    Method to improve passivation openings by reflow of photoresist to eliminate tape residue
    6.
    发明授权
    Method to improve passivation openings by reflow of photoresist to eliminate tape residue 失效
    通过光刻胶回流来改善钝化开口以消除胶带残留的方法

    公开(公告)号：US06878642B1

    公开(公告)日：2005-04-12

    申请号：US09679514

    申请日：2000-10-06

    申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Kuo-Liang Lu

    发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Kuo-Liang Lu

    IPC分类号： H01L21/311 ,  H01L21/31

    CPC分类号： H01L21/31116 ,  H01L23/3171 ,  H01L2224/11472

    摘要： A new method to form passivation openings in the manufacture of an integrated circuit device is achieved. The passivation openings have gradually sloping sidewalls that allow a protective tape to be completely removed without leaving adhesive residue. A semiconductor substrate is provided. A passivation layer is deposited. An organic photoresist layer is deposited overlying the passivation layer. The organic photoresist layer is patterned to expose the passivation layer in areas where passivation openings are planned. The organic photoresist layer is reflowed to create gradually sloping sidewalls on the organic photoresist layer. The passivation layer is etched through to from the passivation openings. The passivation openings are thereby formed with gradually sloping sidewalls. The organic photoresist layer is stripped away. A protective tape is applied overlying the passivation layer and the passivation openings. The protective tape is removed. The gradually sloping sidewalls on the passivation openings allow the protective tape to be completely removed without leaving adhesive residue in the manufacture of the integrated circuit device.

    摘要翻译： 实现了在制造集成电路器件中形成钝化开口的新方法。 钝化开口具有逐渐倾斜的侧壁，其允许完全去除保护带而不留下粘合剂残留物。 提供半导体衬底。 沉积钝化层。 沉积在钝化层上的有机光致抗蚀剂层。 有机光致抗蚀剂层被图案化以在钝化开口被计划的区域中露出钝化层。 有机光致抗蚀剂层被回流以在有机光致抗蚀剂层上产生逐渐倾斜的侧壁。 从钝化开口蚀刻钝化层。 因此钝化开口由逐渐倾斜的侧壁形成。 剥离有机光致抗蚀剂层。 施加保护带覆盖钝化层和钝化开口。 取下保护胶带。 钝化开口上逐渐倾斜的侧壁允许保护带被完全去除，而不会在集成电路器件的制造中留下残留粘合剂。

    Material to improve CMOS image sensor yield during wafer sawing
    8.
    发明授权
    Material to improve CMOS image sensor yield during wafer sawing 有权
    在晶圆锯切期间提高CMOS图像传感器产量的材料

    公开(公告)号：US06759276B1

    公开(公告)日：2004-07-06

    申请号：US10209149

    申请日：2002-07-30

    申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan

    发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan

    IPC分类号： H01L2144

    CPC分类号： H01L27/14632 ,  H01L27/14627 ,  H01L27/14687

    摘要： A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is singulated by sawing through the layer of material that has been coated over the surface of the wafer and by then sawing through the wafer. The singulated die is then further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

    摘要翻译： 提供了一种新的方法，在将晶片分离成单独的芯片的过程之前处理晶片。 已经在其上形成CMOS图像传感器装置的晶片的表面涂覆有不溶于水的材料层。 通过锯切已经涂覆在晶片表面上的材料层，然后通过晶片锯切将晶片分割。 然后通过将模具安装，引线接合，将模具包围在模具化合物中并标记包装件的步骤进一步处理单模模具。

    Rework procedure for the microlens element of a CMOS image sensor
    9.
    发明授权
    Rework procedure for the microlens element of a CMOS image sensor 有权
    CMOS图像传感器的微透镜元件的返工程序

    公开(公告)号：US06531266B1

    公开(公告)日：2003-03-11

    申请号：US09808920

    申请日：2001-03-16

    申请人： Chih-Kung Chang ,  Kuang-Peng Lin ,  Yu-Kung Hsiao ,  Fu-Tien Weng ,  Bii-Junq Chang ,  Kuo-Liang Lu

    发明人： Chih-Kung Chang ,  Kuang-Peng Lin ,  Yu-Kung Hsiao ,  Fu-Tien Weng ,  Bii-Junq Chang ,  Kuo-Liang Lu

    IPC分类号： H01L2714

    CPC分类号： B29D11/00365 ,  G02B3/0018 ,  H01L31/02162 ,  H01L31/02327

    摘要： A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.

    摘要翻译： 已经开发了一种用于重新制造图像传感器装置的未回流，有缺陷的微透镜元件形状的过程，而不损坏下面的间隔层或底层滤色器元件。 未回流的微透镜元件形状（如果有缺陷和需要返工）首先经受高能量曝光，将未回流的微透镜元件形状转换成酸型微透镜形状，然后使用碱式显影剂溶液除去。 在形成再加工的微透镜元件形状之前，在基底型显影剂移除程序之后，使用烘烤循环来冷冻或使无活性的任何残留在间隔层的表面上的有机残余物。 返工的微透镜元件形状的形成，随后是退火循环，在下面的间隔层上产生所需的圆形微透镜元件。

    Effective method to improve sub-micron color filter sensitivity
    10.
    发明申请
    Effective method to improve sub-micron color filter sensitivity 有权
    提高亚微米滤色片灵敏度的有效方法

    公开(公告)号：US20050242271A1

    公开(公告)日：2005-11-03

    申请号：US10833565

    申请日：2004-04-28

    申请人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Chin-Kung Chang ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin-Chen Kuo

    发明人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Chin-Kung Chang ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin-Chen Kuo

    IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0216 ,  H01L31/0232

    CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627

    摘要： An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens array, an overcoat layer, and a second microlens array. A key feature is that a second microlens has a larger radius of curvature than a first microlens. Additionally, each first microlens and second microlens is a flat convex lens. Thus, a thicker second microlens with a short focal length is aligned above a thinner first microlens having a long focal length. A light column that includes a first microlens, a second microlens and a color filter region is formed above each photodiode. A second embodiment involves replacing a second microlens in each light column with a plurality of smaller second microlenses that focus light onto a first microlens.

    摘要翻译： 描述了用于形成所述装置的图像传感器装置和方法。 图像传感器结构包括具有光电二极管的衬底，形成在衬底上的互连结构，在互连结构上方的滤色器层，第一微透镜阵列，外涂层和第二微透镜阵列。 一个关键特征是第二微透镜具有比第一微透镜更大的曲率半径。 另外，每个第一微透镜和第二微透镜是平凸透镜。 因此，具有短焦距的较厚的第二微透镜在具有长焦距的较薄的第一微透镜上对准。 在每个光电二极管上方形成包括第一微透镜，第二微透镜和滤色器区域的光柱。 第二实施例涉及用多个将光聚焦到第一微透镜上的多个较小的第二微透镜替换每个光柱中的第二微透镜。