公开(公告)号：US20120064642A1

公开(公告)日：2012-03-15

申请号：US12881457

申请日：2010-09-14

申请人： Hung-Wen HUANG ,  Hsing-Kuo HSIA ,  Ching-Hua CHIU

发明人： Hung-Wen HUANG ,  Hsing-Kuo HSIA ,  Ching-Hua CHIU

IPC分类号： H01L21/3065 ,  H01L21/66 ,  H01L21/306

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/405

摘要： A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.

摘要翻译： 发光二极管（LED）形成在通过研磨然后蚀刻蓝宝石衬底而从LED除去的蓝宝石衬底上。 使用单一研磨剂或多个研磨剂将蓝宝石衬底首先研磨至第一指定厚度。 通过干蚀刻或湿法蚀刻去除剩余的蓝宝石衬底。

公开(公告)号：US20120032212A1

公开(公告)日：2012-02-09

申请号：US12851696

申请日：2010-08-06

申请人： Hung-Wen HUANG ,  Hsing-Kuo HSIA ,  Ching-Hua CHIU

发明人： Hung-Wen HUANG ,  Hsing-Kuo HSIA ,  Ching-Hua CHIU

IPC分类号： H01L33/58 ,  H01L21/30

CPC分类号： H01L33/44 ,  H01L21/2654 ,  H01L21/2658 ,  H01L2933/0025

摘要： A Light-Emitting Diode (LED) includes a light-emitting structure having a passivation layer disposed on vertical sidewalls across a first doped layer, an active layer, and a second doped layer that completely covers at least the sidewalls of the active layer. The passivation layer is formed by plasma bombardment or ion implantation of the light-emitting structure. It protects the sidewalls during subsequent processing steps and prevents current leakage around the active layer.

摘要翻译： 发光二极管（LED）包括具有钝化层的发光结构，所述钝化层设置在横跨第一掺杂层，有源层和完全覆盖有源层的侧壁的第二掺杂层的垂直侧壁上。 钝化层通过等离子体轰击或发光结构的离子注入而形成。 它在后续处理步骤中保护侧壁，并防止有源层周围的电流泄漏。

公开(公告)号：US20120104409A1

公开(公告)日：2012-05-03

申请号：US13227905

申请日：2011-09-08

申请人： Jung-Tang CHU ,  Ching-Hua CHIU ,  Hung-Wen HUANG ,  Yea-Chen LEE ,  Hsing-Kuo HSIA

发明人： Jung-Tang CHU ,  Ching-Hua CHIU ,  Hung-Wen HUANG ,  Yea-Chen LEE ,  Hsing-Kuo HSIA

IPC分类号： H01L29/20 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

摘要： A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

摘要翻译： 用于生长III-V族半导体结构的种子层嵌入在载体衬底上的电介质材料中。 在III-V族半导体结构生长之后，通过湿蚀刻去除介电材料以分离载体衬底。 III-V族半导体结构包括至少100微米的厚氮化镓层或发光结构。

公开(公告)号：US20090020772A1

公开(公告)日：2009-01-22

申请号：US11984562

申请日：2007-11-20

申请人： Ching-Hua CHIU ,  Hung-Wen HUANG ,  Hao-Chung KUO ,  Tien-Chang LU ,  Shing-Chung WANG ,  Chih-Ming LAI

发明人： Ching-Hua CHIU ,  Hung-Wen HUANG ,  Hao-Chung KUO ,  Tien-Chang LU ,  Shing-Chung WANG ,  Chih-Ming LAI

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/44

摘要： A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

摘要翻译： 发光装置能够发射波长为300〜550nm的光，并且包括：基板; 设置在基板上的p型半导体层; 设置在p型半导体层上的有源层; n型半导体层，设置在有源层上并具有波导管布置表面; 以及波导结构，其形成在所述n型半导体层的所述波导配置面上，并具有从所述波导配置面延伸的多个间隔开的纳米棒。