公开(公告)号：US11446799B2

公开(公告)日：2022-09-20

申请号：US17235483

申请日：2021-04-20

申请人： Hung-Wen Huang

发明人： Hung-Wen Huang

IPC分类号： B25B23/142

摘要： A torque wrench is provided, including a main body, a driving portion, a positioning member, a torque adjusting assembly and a tripping assembly. The main body defines an axial direction. The driving portion is disposed on an end of the main body. The positioning member is fixedly disposed in the main body. The torque adjusting assembly includes an abutting member and a mandrel, and the mandrel is disposed in the main body, rotatable about the axial direction and screwed to the abutting member. The tripping assembly includes an elastic abutting member and a plurality of notches arranged circumferentially one of the elastic abutting member and the plurality of notches is disposed on the mandrel, and the other of the elastic abutting member and the plurality of notches is disposed on the positioning member.

公开(公告)号：US08546165B2

公开(公告)日：2013-10-01

申请号：US13227905

申请日：2011-09-08

申请人： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

发明人： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

IPC分类号： H01L21/00 ,  H01L29/20 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

摘要： A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

摘要翻译： 用于生长III-V族半导体结构的种子层嵌入在载体衬底上的电介质材料中。 在III-V族半导体结构生长之后，通过湿蚀刻去除介电材料以分离载体衬底。 III-V族半导体结构包括至少100微米的厚氮化镓层或发光结构。

公开(公告)号：US20130140592A1

公开(公告)日：2013-06-06

申请号：US13308784

申请日：2011-12-01

申请人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

发明人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC分类号： H01L33/22 ,  H01L33/36

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01L2933/0091

摘要： A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 μm, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.

摘要翻译： 公开了一种发光二极管结构及其制造方法。 在一个示例中，发光二极管结构包括具有大于或等于约250μm的厚度的晶体衬底，其中所述晶体衬底具有第一粗糙表面和第二粗糙表面，所述第二粗糙表面与所述第一粗糙表面相对， 粗糙表面; 设置在所述第一粗糙表面上的多个外延层，所述多个外延层被配置为发光二极管; 以及另一衬底，其结合到所述晶体衬底，使得所述多个外延层设置在所述另一衬底和所述结晶衬底的所述第一粗糙表面之间。

公开(公告)号：US20130095581A1

公开(公告)日：2013-04-18

申请号：US13276108

申请日：2011-10-18

申请人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

发明人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC分类号： H01L21/50 ,  H01L33/48

CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2924/00

摘要： A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

摘要翻译： 公开了用于接合，切割和形成LED管芯的LED管芯和方法。 在一个示例中，该方法包括形成LED晶片，其中LED晶片包括衬底和设置在衬底上的多个外延层，其中多个外延层被配置为形成LED; 将LED晶片连接到基板以形成LED对; 在接合之后，对LED对进行切割，其中，切割包括同时切割LED晶片和基板，从而形成LED管芯。

公开(公告)号：US20120126262A1

公开(公告)日：2012-05-24

申请号：US12949316

申请日：2010-11-18

申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/20

摘要： The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

摘要翻译： 本公开涉及通过图案化和蚀刻n掺杂外延层来形成LED的方法，以在沉积有源层之前形成n掺杂层和邻近粗糙化表面区域的台面结构的粗糙表面的区域，并且其余部分 外延层在台面结构上。 该方法包括在生长衬底的晶片上生长包括未掺杂层和n掺杂层的LED的外延层。 该方法还包括图案化n掺杂层以形成n掺杂层的第一区域和与第一区域相邻的n掺杂层的台面区域。 该方法还包括蚀刻n掺杂层的第一区域以产生粗糙表面。 该方法还包括增加LED的附加外延层，其包括n掺杂层的台面区域上的有源层和p掺杂层。

公开(公告)号：US20120032212A1

公开(公告)日：2012-02-09

申请号：US12851696

申请日：2010-08-06

申请人： Hung-Wen HUANG ,  Hsing-Kuo HSIA ,  Ching-Hua CHIU

发明人： Hung-Wen HUANG ,  Hsing-Kuo HSIA ,  Ching-Hua CHIU

IPC分类号： H01L33/58 ,  H01L21/30

CPC分类号： H01L33/44 ,  H01L21/2654 ,  H01L21/2658 ,  H01L2933/0025

摘要： A Light-Emitting Diode (LED) includes a light-emitting structure having a passivation layer disposed on vertical sidewalls across a first doped layer, an active layer, and a second doped layer that completely covers at least the sidewalls of the active layer. The passivation layer is formed by plasma bombardment or ion implantation of the light-emitting structure. It protects the sidewalls during subsequent processing steps and prevents current leakage around the active layer.

摘要翻译： 发光二极管（LED）包括具有钝化层的发光结构，所述钝化层设置在横跨第一掺杂层，有源层和完全覆盖有源层的侧壁的第二掺杂层的垂直侧壁上。 钝化层通过等离子体轰击或发光结构的离子注入而形成。 它在后续处理步骤中保护侧壁，并防止有源层周围的电流泄漏。

公开(公告)号：US20120012871A1

公开(公告)日：2012-01-19

申请号：US12837227

申请日：2010-07-15

申请人： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

发明人： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

IPC分类号： H01L33/10 ,  H01L21/66 ,  H01L21/50

CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

摘要： The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

摘要翻译： 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。

公开(公告)号：US07888144B2

公开(公告)日：2011-02-15

申请号：US11984562

申请日：2007-11-20

申请人： Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

发明人： Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/44

摘要： A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

摘要翻译： 发光装置能够发射波长为300〜550nm的光，并且包括：基板; 设置在基板上的p型半导体层; 设置在p型半导体层上的有源层; n型半导体层，设置在有源层上并具有波导管布置表面; 以及波导结构，其形成在所述n型半导体层的所述波导配置面上，并具有从所述波导配置面延伸的多个间隔开的纳米棒。

公开(公告)号：US11260508B2

公开(公告)日：2022-03-01

申请号：US17039206

申请日：2020-09-30

申请人： Hung-Wen Huang

发明人： Hung-Wen Huang ,  Ta-Hsin Feng

IPC分类号： B25B13/06 ,  B25B23/00 ,  B25B23/142 ,  B25B23/14

摘要： A torque socket tool is provided, including: a main body, a driving member, an engaging member, a torque adjustment assembly and a rotating member. The main body defines an axial direction and has a first restricting portion. The driving member is rotatably disposed on the main body about the axial direction. The engaging member is slidably disposed on the main body. The torque adjustment assembly includes a mandrel. The mandrel is disposed within the main body and rotatable about the axial direction. The rotating member is non-rotatably sleeved with the mandrel and has a second restricting portion.

公开(公告)号：US11203100B2

公开(公告)日：2021-12-21

申请号：US16743050

申请日：2020-01-15

申请人： Wen-Chin Kuo ,  Hung-Wen Huang

发明人： Wen-Chin Kuo ,  Hung-Wen Huang

IPC分类号： B25B23/159 ,  B25B23/142 ,  B25B13/46

摘要： A torque structure includes a first body provided with a receiving recess, a second body pivotally connected with the first body, a first elastic member received in the second body, a retaining unit including a mounting seat provided with a first threaded portion and a plurality of first through holes, a first adjusting member provided with a head, a positioning seat provided with a plurality of second through holes, and a locking unit including a plurality of first locking members, a second locking member, a plurality of third locking members, a fourth locking member, a fastening member, and a second adjusting member. The fastening member is provided with a fitting portion connected with the first body. The fastening member is provided with a third threaded portion. The second adjusting member is provided with a fourth threaded portion screwed into the third threaded portion.