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    ORGANIC-INORGAIC HYBRID POLYAMIC ESTER, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING A FILM THEREOF
    3.
    发明申请
    ORGANIC-INORGAIC HYBRID POLYAMIC ESTER, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING A FILM THEREOF 审中-公开
    有机无机混合聚酰胺，其制备方法及其制备方法

    公开(公告)号：US20130156960A1

    公开(公告)日：2013-06-20

    申请号：US13619706

    申请日：2012-09-14

    申请人： Seung Koo PARK ,  Jeong Ik LEE ,  Doo-Hee CHO ,  Hye Yong CHU ,  Chul Woong JOO

    发明人： Seung Koo PARK ,  Jeong Ik LEE ,  Doo-Hee CHO ,  Hye Yong CHU ,  Chul Woong JOO

    IPC分类号： C08L77/06 ,  B05D3/02 ,  B05D7/24

    CPC分类号： C08L79/08 ,  C08G73/1039 ,  C08G73/1053 ,  C08G73/1067 ,  C08G73/1071 ,  C09D179/08

    摘要： Provided are organic-inorganic hybrid polyamic ester, method of fabricating the same, and method of fabricating a film thereof. The polyamic ester is formed by chemically reacting an inorganic precursor containing inorganic and/or metal element with a polyamic acid having two carboxyl acid of good reactivity per a polymer repeating unit. The inorganic alkoxide is hydrolyzed to be the corresponding inorganic hydroxide. The hydroxyl group is reacted with the carboxylic acid of the polyamic acid and with the hydroxyl group of the other inorganic hydroxide. Therefore, the polyamic ester can steadily include more inorganic materials. The content amount of the inorganic material is relatively high, so that the polyamic ester may have superior refractive index, chemical and heat resistances.

    摘要翻译： 提供有机 - 无机杂化聚酰胺酯，其制备方法及其制备方法。 通过使含有无机和/或金属元素的无机前体与具有两个聚合物重复单元具有良好反应性的羧酸的聚酰胺酸化学反应形成聚酰胺酯。 将无机醇盐水解成相应的无机氢氧化物。 羟基与聚酰胺酸的羧酸和其它无机氢氧化物的羟基反应。 因此，聚酰胺酯可以稳定地包含更多的无机材料。 无机材料的含量相对较高，因此聚酰胺酯可具有优异的折射率，耐化学性和耐热性。

    Transparent Organic Light Emitting Diode Lighting Device
    4.
    发明申请
    Transparent Organic Light Emitting Diode Lighting Device 审中-公开
    透明有机发光二极管照明装置

    公开(公告)号：US20100237374A1

    公开(公告)日：2010-09-23

    申请号：US12727632

    申请日：2010-03-19

    申请人： Hye Yong CHU ,  Jeong Ik Lee ,  Jong Hee Lee ,  Kyoung Ik Cho

    发明人： Hye Yong CHU ,  Jeong Ik Lee ,  Jong Hee Lee ,  Kyoung Ik Cho

    IPC分类号： H01L51/52

    CPC分类号： H01L27/3227 ,  H01L27/288 ,  H01L31/056 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5271 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5361 ,  H02S40/38 ,  Y02E10/52

    摘要： Provided is a transparent organic light emitting diode (OLED) lighting device in which opaque metal reflectors are formed to adjust light emitting directions. The transparent OLED lighting device includes a transparent substrate, a transparent anode formed on a predetermined region of the transparent substrate, a reflective anode formed adjacent to the transparent anode on another region of the transparent substrate, an organic layer formed on the transparent and reflective anodes, and a transparent cathode and an encapsulation substrate sequentially stacked on the organic layer. Directions of light emitted from the organic layer vary depending on the current applied to the transparent and reflective anodes.

    摘要翻译： 提供了一种透明有机发光二极管（OLED）照明装置，其中形成不透明金属反射器以调节发光方向。 透明OLED照明装置包括透明基板，形成在透明基板的预定区域上的透明阳极，在透明基板的另一区域上与透明阳极相邻形成的反射阳极，形成在透明和反射阳极上的有机层 以及依次层叠在有机层上的透明阴极和封装基板。 从有机层发射的光的方向根据施加到透明和反射阳极的电流而变化。

    TRANSPARENT SMART LIGHT SOURCE CAPABLE OF ADJUSTING ILLUMINATION DIRECTION
    5.
    发明申请
    TRANSPARENT SMART LIGHT SOURCE CAPABLE OF ADJUSTING ILLUMINATION DIRECTION 有权
    透明的智能光源可调节照明方向

    公开(公告)号：US20110310458A1

    公开(公告)日：2011-12-22

    申请号：US12816858

    申请日：2010-06-16

    申请人： Jeong Ik LEE ,  Hye Yong CHU ,  Jong Hee LEE

    发明人： Jeong Ik LEE ,  Hye Yong CHU ,  Jong Hee LEE

    IPC分类号： G02F1/153 ,  G02F1/29

    CPC分类号： G02F1/15 ,  E06B9/24 ,  E06B2009/2417 ,  E06B2009/2464 ,  E06B2009/247 ,  E06B2009/2476 ,  F21S9/037 ,  F21V33/006 ,  F21Y2105/00 ,  F21Y2115/15 ,  G02F2201/44 ,  G02F2202/34 ,  H01L27/3227 ,  H01L27/3232 ,  H01L2251/5323 ,  H01L2251/5361

    摘要： A transparent smart light source capable of adjusting an illumination direction is provided. The transparent smart light source includes a reflectance/transmittance tunable device that adjusts an illumination direction by reflecting or transmitting light emitted from a transparent organic light-emitting diode (OLED) according to applied voltage, and thus can simply adjust the illumination direction according to purpose. Accordingly, it is possible to prevent optical loss in an unnecessary direction, and power consumption can be reduced. Furthermore, the transparent smart light source can serve as a curtain blocking out external light, as well as a lighting device, and also can be combined with a solar cell to generate electric power.

    摘要翻译： 提供能够调节照明方向的透明智能光源。 透明智能光源包括通过根据施加的电压反射或透射从透明有机发光二极管（OLED）发射的光来调节照明方向的反射/透射可调谐装置，因此可以根据目的简单地调节照明方向 。 因此，可以防止在不必要的方向上的光损失，并且可以降低功耗。 此外，透明智能光源可以用作遮挡外部光的窗帘以及照明装置，并且还可以与太阳能电池组合以产生电力。

    WHITE ORGANIC LIGHT EMITTING DEVICE
    6.
    发明申请
    WHITE ORGANIC LIGHT EMITTING DEVICE 审中-公开
    白有机发光装置

    公开(公告)号：US20120032186A1

    公开(公告)日：2012-02-09

    申请号：US13239810

    申请日：2011-09-22

    申请人： Jeong Ik LEE ,  Hye Yong CHU ,  Lee Mi DO ,  Sang Hee PARK ,  Chi Sun HWANG ,  Yong Suk YANG ,  Sung Mook CHUNG

    发明人： Jeong Ik LEE ,  Hye Yong CHU ,  Lee Mi DO ,  Sang Hee PARK ,  Chi Sun HWANG ,  Yong Suk YANG ,  Sung Mook CHUNG

    IPC分类号： H01L33/02

    CPC分类号： H01L51/5036

    摘要： Provided is a white organic light emitting device (OLED), including: a first electrode formed on a substrate; a hole transport layer formed on the first electrode; an emission layer formed on the hole transport layer; an electron transport layer formed on the emission layer; and an color control layer formed on at least one of the hole transport layer, the emission layer and the electron transport layer, and emitting green and/or red by energy transfer from the emission layer. The white OLED emits red, green and blue light with high efficiency, has excellent color reproducibility and a high color reproduction index.

    摘要翻译： 提供了一种白色有机发光器件（OLED），包括：形成在衬底上的第一电极; 形成在所述第一电极上的空穴传输层; 形成在空穴传输层上的发光层; 形成在发光层上的电子传输层; 以及形成在空穴传输层，发射层和电子传输层中的至少一个上的颜色控制层，并且通过从发射层的能量转移发射绿色和/或红色。 白色OLED以高效率发出红色，绿色和蓝色光，具有优异的色彩再现性和高色彩再现指数。

    METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER
    7.
    发明申请
    METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER 审中-公开
    用于电子器件的ZnO半导体层的制造方法和包括ZnO半导体层的薄膜晶体管

    公开(公告)号：US20080277656A1

    公开(公告)日：2008-11-13

    申请号：US11970737

    申请日：2008-01-08

    申请人： Sang Hee PARK ,  Chi Sun HWANG ,  Hye Yong CHU ,  Jeong Ik LEE

    发明人： Sang Hee PARK ,  Chi Sun HWANG ,  Hye Yong CHU ,  Jeong Ik LEE

    IPC分类号： H01L21/20 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/0262 ,  H01L29/66969

    摘要： Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.

    摘要翻译： 提供一种制造电子器件的ZnO半导体层的方法，其可以使用前体之间的表面化学反应来控制ZnO半导体层的晶体的尺寸和载流子的数量，以及包括 ZnO半导体层。 该方法包括：（a）将衬底装载到腔室中; （b）将Zn前体注入到室中以将Zn前体吸附在基底上; （c）将惰性气体或N 2 O 2气体注入到室中以除去剩余的Zn前体; （d）将氧前体注入到所述室中以引起所述氧前体和所述衬底上吸附的所述Zn前体之间的反应以形成所述ZnO半导体层; （e）将N 2 N 2气体或惰性气体注入到室中以除去剩余的氧前体; （f）重复步骤（a）至（e）; （g）使用O 2等离子体或O 3 3重复处理ZnO半导体层的表面处理; （h）将N 2气体或惰性气体注入到室中以除去剩余的氧和Zn前体; 和（i）重复步骤（a）至（h）以控制ZnO半导体层的厚度。 在该方法中，使用透明基板形成透明TFT以能够制造透明显示装置，并且可以使用柔性基板制造柔性显示装置。 此外，可以增加ZnO半导体层的结晶度以提高TFT的迁移率，并且可以控制载流子数量以减少漏电流。 因此，可以制造具有优异特性的ZnO半导体。

    METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER
    8.
    发明申请
    METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER 有权
    使用原子层沉积和包括P型ZnO半导体层的薄膜晶体管制造P型ZnO半导体层的方法

    公开(公告)号：US20080164476A1

    公开(公告)日：2008-07-10

    申请号：US11970836

    申请日：2008-01-08

    申请人： Sang Hee PARK ,  Chi Sun HWANG ,  Hye Yong CHU ,  Jeong Ik LEE

    发明人： Sang Hee PARK ,  Chi Sun HWANG ,  Hye Yong CHU ,  Jeong Ik LEE

    IPC分类号： H01L29/10 ,  H01L21/31

    CPC分类号： H01L29/7869 ,  C23C16/308 ,  C23C16/34 ,  C23C16/407 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/0262

    摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

    摘要翻译： 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

    METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER
    9.
    发明申请
    METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER 有权
    使用原子层沉积和包括P型ZnO半导体层的薄膜晶体管制造P型ZnO半导体层的方法

    公开(公告)号：US20110084274A1

    公开(公告)日：2011-04-14

    申请号：US12967538

    申请日：2010-12-14

    申请人： Sang Hee PARK ,  Chi Sun HWANG ,  Hye Yong CHU ,  Jeong Ik LEE

    发明人： Sang Hee PARK ,  Chi Sun HWANG ,  Hye Yong CHU ,  Jeong Ik LEE

    IPC分类号： H01L29/12 ,  H01L21/34

    CPC分类号： H01L29/7869 ,  C23C16/308 ,  C23C16/34 ,  C23C16/407 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/0262

    摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

    摘要翻译： 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。