公开(公告)号：US20110284937A1

公开(公告)日：2011-11-24

申请号：US12858702

申请日：2010-08-18

申请人： Hyung Jun KIM ,  Jin Dong Song ,  Hyun Cheol Koo ,  Kyung Ho Kim ,  Suk Hee Han

发明人： Hyung Jun KIM ,  Jin Dong Song ,  Hyun Cheol Koo ,  Kyung Ho Kim ,  Suk Hee Han

IPC分类号： H01L29/82

CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  Y10S257/902

摘要： A spin transistor that includes: a semiconductor substrate including an upper cladding layer and a lower cladding layer, and a channel layer interposed between the upper and lower cladding layers; a ferromagnetic source and a ferromagnetic drain formed on the semiconductor substrate and spaced from each other in a length direction of the channel layer; and a gate electrode formed on the semiconductor substrate between the source and the drain and having applied a gate voltage thereto to control a spin precession of an electron passing through the channel layer, wherein the semiconductor substrate includes a first carrier supply layer of a first conductivity type disposed below the lower cladding layer and supplying carriers to the channel layer, and a second carrier supply layer of a second conductivity type opposite to the first conductivity type formed on the upper cladding layer and supplying the carriers to the channel layer.

摘要翻译： 一种自旋晶体管，包括：包括上包层和下包层的半导体衬底，以及介于上包层和下包层之间的沟道层; 形成在所述半导体基板上并且在所述沟道层的长度方向上彼此间隔开的铁磁源和铁磁性漏极; 以及形成在所述源极和漏极之间的所述半导体衬底上并且施加了栅极电压以用于控制通过所述沟道层的电子的自旋进动的栅电极，其中所述半导体衬底包括具有第一导电性的第一载流子供应层 类型，其设置在所述下包层下方并且将沟道层供给到所述沟道层;以及第二导电类型的第二载流子供应层，其形成在所述上包层上并且将所述载流子提供给所述沟道层。

公开(公告)号：US08183611B2

公开(公告)日：2012-05-22

申请号：US12858702

申请日：2010-08-18

申请人： Hyung Jun Kim ,  Jin Dong Song ,  Hyun Cheol Koo ,  Kyung Ho Kim ,  Suk Hee Han

发明人： Hyung Jun Kim ,  Jin Dong Song ,  Hyun Cheol Koo ,  Kyung Ho Kim ,  Suk Hee Han

IPC分类号： H01L29/76

CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  Y10S257/902

摘要： A spin transistor that includes: a semiconductor substrate including an upper cladding layer and a lower cladding layer, and a channel layer interposed between the upper and lower cladding layers; a ferromagnetic source and a ferromagnetic drain formed on the semiconductor substrate and spaced from each other in a length direction of the channel layer; and a gate electrode formed on the semiconductor substrate between the source and the drain and having applied a gate voltage thereto to control a spin precession of an electron passing through the channel layer, wherein the semiconductor substrate includes a first carrier supply layer of a first conductivity type disposed below the lower cladding layer and supplying carriers to the channel layer, and a second carrier supply layer of a second conductivity type opposite to the first conductivity type formed on the upper cladding layer and supplying the carriers to the channel layer.

摘要翻译： 一种自旋晶体管，包括：包括上包层和下包层的半导体衬底，以及介于上包层和下包层之间的沟道层; 形成在所述半导体基板上并且在所述沟道层的长度方向上彼此间隔开的铁磁源和铁磁性漏极; 以及形成在所述源极和漏极之间的所述半导体衬底上并且施加了栅极电压以用于控制通过所述沟道层的电子的自旋进动的栅电极，其中所述半导体衬底包括具有第一导电性的第一载流子供应层 类型，其设置在所述下包层下方并且将沟道层供给到所述沟道层;以及第二导电类型的第二载流子供应层，其形成在所述上包层上并且将所述载流子提供给所述沟道层。

公开(公告)号：US08058676B2

公开(公告)日：2011-11-15

申请号：US12342426

申请日：2008-12-23

申请人： Hyung Jun Kim ,  Hyun Cheol Koo ,  Joon Yeon Chang ,  Suk Hee Han ,  Kyung Ho Kim

发明人： Hyung Jun Kim ,  Hyun Cheol Koo ,  Joon Yeon Chang ,  Suk Hee Han ,  Kyung Ho Kim

IPC分类号： H01L29/76

CPC分类号： H01L29/66984 ,  H01L29/7785

摘要： A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer.

摘要翻译： 自旋晶体管包括：半导体衬底，包括具有二维电子气体结构的沟道层和分别设置在沟道层的上侧和下侧的上和下包层; 形成在所述半导体衬底上并且彼此间隔开的铁磁源极和漏极; 栅电极，设置在源电极和漏电极之间并且施加栅极电压以控制通过沟道层的电子的自旋; 第一载流子供给层，设置在所述下包层和所述沟道层之间，以向所述沟道层提供载流子; 以及第二载体供给层，其设置在所述上​​包层和所述沟道层之间，以将载流子供应到所述沟道层。

公开(公告)号：US20100084633A1

公开(公告)日：2010-04-08

申请号：US12342426

申请日：2008-12-23

申请人： Hyung Jun Kim ,  Hyun Cheol Koo ,  Joon Yeon Chang ,  Suk Hee Han ,  Kyung Ho Kim

发明人： Hyung Jun Kim ,  Hyun Cheol Koo ,  Joon Yeon Chang ,  Suk Hee Han ,  Kyung Ho Kim

IPC分类号： H01L29/66

CPC分类号： H01L29/66984 ,  H01L29/7785

摘要： A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer.

摘要翻译： 自旋晶体管包括：半导体衬底，包括具有二维电子气体结构的沟道层和分别设置在沟道层的上侧和下侧的上和下包层; 形成在所述半导体衬底上并且彼此间隔开的铁磁源极和漏极; 栅电极，设置在源电极和漏电极之间并且施加栅极电压以控制通过沟道层的电子的自旋; 第一载流子供给层，设置在所述下包层和所述沟道层之间，以向所述沟道层提供载流子; 以及第二载体供给层，其设置在所述上​​包层和所述沟道层之间，以将载流子供应到所述沟道层。

公开(公告)号：US20090152606A1

公开(公告)日：2009-06-18

申请号：US12233488

申请日：2008-09-18

申请人： Hyun Cheol KOO ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Kyung Ho Kim

发明人： Hyun Cheol KOO ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Kyung Ho Kim

IPC分类号： H01L29/51 ,  H01L21/00

CPC分类号： H01L29/205 ,  B82Y10/00 ,  H01L29/122 ,  H01L29/66984 ,  Y10S977/933

摘要： A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer.

摘要翻译： 有助于器件的小型化和大规模集成的自旋晶体管，因为源极和漏极的磁化方向由铁磁体的外延生长的方向决定。 自旋晶体管包括其内部形成有沟道层的半导体衬底; 外延生长在半导体衬底上的铁磁源极和漏极，并且由于磁晶各向异性而在沟道层的纵向上被磁化 - 源极和漏极沿沟道方向彼此间隔开并沿相同方向被磁化; 以及设置在源极和漏极之间的栅极，与半导体衬底绝缘并形成在半导体衬底上，以控制通过沟道层的电子的自旋。

公开(公告)号：US08053851B2

公开(公告)日：2011-11-08

申请号：US12233488

申请日：2008-09-18

申请人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Kyung Ho Kim

发明人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Kyung Ho Kim

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L29/205 ,  B82Y10/00 ,  H01L29/122 ,  H01L29/66984 ,  Y10S977/933

摘要： A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer.

摘要翻译： 有助于器件的小型化和大规模集成的自旋晶体管，因为源极和漏极的磁化方向由铁磁体的外延生长的方向决定。 自旋晶体管包括其内部形成有沟道层的半导体衬底; 外延生长在半导体衬底上的铁磁源极和漏极，并且由于磁晶各向异性而在沟道层的纵向上被磁化 - 源极和漏极沿沟道方向彼此间隔开并沿相同方向被磁化; 以及设置在源极和漏极之间的栅极，与半导体衬底绝缘并形成在半导体衬底上，以控制通过沟道层的电子的自旋。

公开(公告)号：US08952878B2

公开(公告)日：2015-02-10

申请号：US13517872

申请日：2012-06-14

申请人： Jae Hwa Park ,  Yeo Geon Yoon ,  Jang-Il Kim ,  Kyung Ho Kim ,  Jong-In Kim ,  Min-Wook Park ,  Bum Ki Baek ,  Joon-Chul Goh ,  Young-Soo Yoon ,  Hak Bum Choi ,  Hyo-Seop Kim

发明人： Jae Hwa Park ,  Yeo Geon Yoon ,  Jang-Il Kim ,  Kyung Ho Kim ,  Jong-In Kim ,  Min-Wook Park ,  Bum Ki Baek ,  Joon-Chul Goh ,  Young-Soo Yoon ,  Hak Bum Choi ,  Hyo-Seop Kim

IPC分类号： G09G3/36 ,  G02F1/1345 ,  G02F1/1362

CPC分类号： G02F1/136286 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/13624 ,  G02F1/1368 ,  G09G3/3648 ,  G09G3/3655 ,  G09G2300/0426 ,  G09G2300/0876 ,  G09G2320/0233 ,  H01L27/124

摘要： A display device includes gate lines, data lines, first wires and second wires extending in the directions of the gate lines and data lines, and pixels having a first subpixel and a second subpixel each. The first subpixel has a first subpixel electrode and a first switching element, and the second subpixel has a second subpixel electrode and second and third switching elements. The control terminals of the three switching elements are connected to the same gate line, and the input terminals of the first and second switching elements are connected to the same data line. The first and second switching elements have output terminals connected to the first and second subpixel electrodes, respectively. The second switching element's output terminal connects to the third switching element, which has an output terminal connected to a second wire. The first wires and the second wires are connected in a pixel.

摘要翻译： 显示装置包括栅极线，数据线，第一布线和沿着栅极线和数据线的方向延伸的第二布线，以及具有第一子像素和第二子像素的像素。 第一子像素具有第一子像素电极和第一开关元件，第二子像素具有第二子像素电极和第二以及第三开关元件。 三个开关元件的控制端子连接到相同的栅极线，并且第一和第二开关元件的输入端子连接到相同的数据线。 第一和第二开关元件分别具有连接到第一和第二子像素电极的输出端子。 第二开关元件的输出端子连接到具有连接到第二导线的输出端子的第三开关元件。 第一线和第二线连接在一个像素中。

公开(公告)号：US07867142B2

公开(公告)日：2011-01-11

申请号：US11375037

申请日：2006-03-15

申请人： Soo Kwan Kim ,  Jin Sang Hwang ,  Kyung Ho Kim

发明人： Soo Kwan Kim ,  Jin Sang Hwang ,  Kyung Ho Kim

IPC分类号： A63B71/00

CPC分类号： A63B24/00 ,  A63B2230/06 ,  G06F19/00 ,  G06Q50/22 ,  Y10S482/90

摘要： A method and system for providing a sound source suitable for an exercise state of a user by recognizing the exercise state of the user by measuring heart rate and exercise speed of the user. The method includes: determining a standard heart rate; measuring a heart rate of a user; measuring an exercise speed of the user; comparing the measured heart rate and the standard heart rate; when a difference between the both heart rates is more than a predetermined value, generating compensated exercise speed information based on the difference and the measured exercise speed; and replaying a sound source according to the compensated exercise speed information. According to the exercise state management method, heart rate suitable for the type, intensity, or time of exercise selected by the user and a sound source suitable for exercise speed are provided, thereby improving satisfaction and effectiveness of the exercise.

摘要翻译： 一种用于通过测量用户的心率和运动速度来识别用户的运动状态来提供适合于用户运动状态的声源的方法和系统。 该方法包括：确定标准心率; 测量用户的心率; 测量用户的运动速度; 比较测量的心率和标准心率; 当两个心率之间的差异大于预定值时，基于差异和测量的运动速度产生补偿的运动速度信息; 并且根据补偿的运动速度信息重放声源。 根据运动状态管理方法，提供适合于用户选择的运动类型，强度或运动时间以及适合运动速度的声源的心率，从而提高运动的满意度和有效性。

公开(公告)号：US20080228050A1

公开(公告)日：2008-09-18

申请号：US11717210

申请日：2007-03-13

申请人： In Duk Hwang ,  Jae Chan Park ,  Kyung Ho Kim

发明人： In Duk Hwang ,  Jae Chan Park ,  Kyung Ho Kim

IPC分类号： A61B5/00

CPC分类号： A61B5/14535 ,  A61B5/14532 ,  A61B5/1455 ,  G01N21/65

摘要： A noninvasive in vivo measuring system and a noninvasive in vivo measuring method are provided. In the noninvasive in vivo measuring system, a Raman-fluorescence measuring unit measures blood sugar concentration, which is measured using Raman spectra before and after applying a pressure on a finger, and outputs a final blood sugar level by correcting the blood sugar concentration measurement according to a Hemoglobin (Hb) concentration measured by an Hb measuring unit.

摘要翻译： 提供了非侵入式体内测量系统和非侵入式体内测量方法。 在无创体内测量系统中，拉曼荧光测量单元测量在对手指施加压力之前和之后使用拉曼光谱测量的血糖浓度，并通过校正血糖浓度测量来输出最终血糖水平 到由Hb测量单元测量的血红蛋白（Hb）浓度。

公开(公告)号：US20070167855A1

公开(公告)日：2007-07-19

申请号：US11603015

申请日：2006-11-22

申请人： Sang Hoon Shin ,  Sun Gi Hong ,  Kyung Ho Kim ,  Wan Taek Han

发明人： Sang Hoon Shin ,  Sun Gi Hong ,  Kyung Ho Kim ,  Wan Taek Han

IPC分类号： A61B5/08

CPC分类号： A61B5/08 ,  A61B5/0878 ,  A61B5/486 ,  A61B5/7405 ,  A61B5/742 ,  A61B7/003

摘要： A system, medium, and method conducing a user's breathing, in which a sound generated during a user's exhale and/or an ambient temperature change occurring during the exhale is sensed to measure a respiratory waveform of the user. Respiratory information of the user may then be produced from the respiratory waveform, and when the respiratory information of the user is different from normal respiratory information of the user, breathing information according to the normal respiratory information may be provided to the user so the user can use the same to modify their breathing.

摘要翻译： 感测用户呼吸期间产生的声音和/或在呼出期间发生的环境温度变化的声音的系统，介质和方法，以测量用户的呼吸波形。 然后可以从呼吸波形产生用户的呼吸信息，并且当用户的呼吸信息不同于用户的正常呼吸信息时，可以向用户提供根据正常呼吸信息的呼吸信息，以便用户可以 使用相同的方式修改呼吸。