Display substrate including an auxiliary electrode
    1.
    发明授权
    Display substrate including an auxiliary electrode 有权
    显示基板,包括辅助电极

    公开(公告)号:US09123589B2

    公开(公告)日:2015-09-01

    申请号:US13422686

    申请日:2012-03-16

    摘要: A display substrate includes a data line, a main gate line, and a first sub-pixel electrode formed on a base substrate. The display substrate further includes a first switching element connected to the data line. The display substrate further includes a second switching element connected to the data line, the main gate line, and a second sub-pixel electrode spaced apart from the first sub-pixel electrode. The display substrate further includes a third switching element connected to the data line and a secondary gate line adjacent to the main gate line. The display substrate further includes a shielding line spaced apart from the first and second sub-pixel electrodes, the shielding line overlapping the data line and receiving a reference voltage. The display substrate further includes an auxiliary electrode extending from the shielding line and overlapping an end electrode connected to the third switching element.

    摘要翻译: 显示基板包括形成在基底基板上的数据线,主栅线和第一子像素电极。 显示基板还包括连接到数据线的第一开关元件。 显示基板还包括连接到数据线,主栅极线和与第一子像素电极间隔开的第二子像素电极的第二开关元件。 显示基板还包括连接到数据线的第三开关元件和与主栅极线相邻的次级栅极线。 显示基板还包括与第一和第二子像素电极间隔开的屏蔽线,屏蔽线与数据线重叠并接收参考电压。 显示基板还包括从屏蔽线延伸并与连接到第三开关元件的端电极重叠的辅助电极。

    Photomask and thin-film transistor fabricated using the photomask
    2.
    发明授权
    Photomask and thin-film transistor fabricated using the photomask 有权
    使用光掩模制造的光掩模和薄膜晶体管

    公开(公告)号:US08680527B2

    公开(公告)日:2014-03-25

    申请号:US12978446

    申请日:2010-12-24

    IPC分类号: H01L29/417

    摘要: A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.

    摘要翻译: 光掩模包括; 源电极图案,包括: 沿第一方向延伸的第一电极部分,沿第一方向延伸并基本上平行于第一电极部分的第二电极部分,以及从第一电极部分的第一端延伸到第一电极部分的第三电极部分, 并且以第一曲率圆形化,漏电极图案,其沿第一方向延伸并且设置在第一电极部分和第二电极部分之间,其中漏极电极图案的端部被圆化以对应 到所述第三电极部分; 以及设置在源极电极图案和漏极电极图案之间的沟道区域图案,其中第一曲率的中心位置和漏极电极图案的端部的圆形部分的中心位置相同。

    DISPLAY SUBSTRATE INCLUDING AN AUXILIARY ELECTRODE
    4.
    发明申请
    DISPLAY SUBSTRATE INCLUDING AN AUXILIARY ELECTRODE 有权
    显示基底包括辅助电极

    公开(公告)号:US20120286274A1

    公开(公告)日:2012-11-15

    申请号:US13422686

    申请日:2012-03-16

    IPC分类号: H01L33/08

    摘要: A display substrate includes a data line, a main gate line, and a first sub-pixel electrode formed on a base substrate. The display substrate further includes a first switching element connected to the data line. The display substrate further includes a second switching element connected to the data line, the main gate line, and a second sub-pixel electrode spaced apart from the first sub-pixel electrode. The display substrate further includes a third switching element connected to the data line and a secondary gate line adjacent to the main gate line. The display substrate further includes a shielding line spaced apart from the first and second sub-pixel electrodes, the shielding line overlapping the data line and receiving a reference voltage. The display substrate further includes an auxiliary electrode extending from the shielding line and overlapping an end electrode connected to the third switching element.

    摘要翻译: 显示基板包括形成在基底基板上的数据线,主栅线和第一子像素电极。 显示基板还包括连接到数据线的第一开关元件。 显示基板还包括连接到数据线,主栅极线和与第一子像素电极间隔开的第二子像素电极的第二开关元件。 显示基板还包括连接到数据线的第三开关元件和与主栅极线相邻的次级栅极线。 显示基板还包括与第一和第二子像素电极间隔开的屏蔽线,屏蔽线与数据线重叠并接收参考电压。 显示基板还包括从屏蔽线延伸并与连接到第三开关元件的端电极重叠的辅助电极。

    PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK
    5.
    发明申请
    PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK 有权
    光电子和薄膜晶体管使用光电制造

    公开(公告)号:US20110156046A1

    公开(公告)日:2011-06-30

    申请号:US12978446

    申请日:2010-12-24

    IPC分类号: H01L29/04 G03F1/00

    摘要: A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.

    摘要翻译: 光掩模包括 源电极图案,包括: 沿第一方向延伸的第一电极部分,沿第一方向延伸并基本上平行于第一电极部分的第二电极部分,以及从第一电极部分的第一端延伸到第一电极部分的第三电极部分, 并且以第一曲率圆形化,漏电极图案,其沿第一方向延伸并且设置在第一电极部分和第二电极部分之间,其中漏极电极图案的端部被圆化以对应 到所述第三电极部分; 以及设置在源极电极图案和漏极电极图案之间的沟道区域图案,其中第一曲率的中心位置和漏极电极图案的端部的圆形部分的中心位置相同。

    METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND A PHOTOLITHOGRAPHY METHOD FOR FABRICATING THIN FILMS
    6.
    发明申请
    METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND A PHOTOLITHOGRAPHY METHOD FOR FABRICATING THIN FILMS 有权
    制造液晶显示器的薄膜晶体管阵列的方法和用于制造薄膜的光刻方法

    公开(公告)号:US20090283769A1

    公开(公告)日:2009-11-19

    申请号:US12467967

    申请日:2009-05-18

    IPC分类号: H01L33/00 H01L29/786

    摘要: A gate wire including a plurality of gate lines and gate electrodes in the display area, and gate pads in the peripheral area is formed on a substrate having a display area and a peripheral area. A gate insulating layer, a semiconductor layer, an ohmic contact layer and a conductor layer are sequentially deposited, and the conductor layer and the ohmic contact are patterned to form a data wire including a plurality of data lines, a source electrode and a drain electrode of the display area and data pads of the peripheral area, and an ohmic contact layer pattern thereunder. A passivation layer is deposited and a positive photoresist layer is coated thereon. The photoresist layer is exposed to light through one or more masks having different transmittance between the display area and the peripheral area. The photoresist layer is developed to form a photoresist pattern having the thickness that varies depending on the position. At this time, a thin portion and a thick portion of the photoresist pattern are provided for the display area, and a thick portion and a zero thickness portion for the peripheral area. In the peripheral area, the portions of the passivation layer, the semiconductor layer and the gate insulating layer on the gate pads, and the portions of the passivation layer on the data pads, under the zero thickness portion, are removed. In the display area, the thin portion of the photoresist pattern, and the portions of the passivation layer and the semiconductor layer thereunder are removed but the portions of the passivation layer under the thick portions of the photoresist pattern is not removed. Then, a plurality of pixel electrodes, redundant gate pads and redundant data pads are formed.

    摘要翻译: 在具有显示区域和周边区域的基板上形成包括显示区域中的多个栅极线和栅电极的栅极线以及周边区域中的栅极焊盘。 依次沉积栅极绝缘层,半导体层,欧姆接触层和导体层,并且对导体层和欧姆接触进行图案化以形成包括多条数据线,源电极和漏电极的数据线 的周边区域的显示区域和数据焊盘以及其下的欧姆接触层图案。 沉积钝化层,并在其上涂覆正性光致抗蚀剂层。 光致抗蚀剂层通过在显示区域和周边区域之间具有不同透射率的一个或多个掩模曝光。 光致抗蚀剂层被显影以形成具有根据位置而变化的厚度的光致抗蚀剂图案。 此时,为显示区域设置有光致抗蚀剂图形的薄部分和厚部分,并且为周边区域设置厚部分和零厚度部分。 在外围区域中,除去栅极焊盘上的钝化层,半导体层和栅极绝缘层的部分以及零厚度部分下的数据焊盘上的钝化层的部分。 在显示区域中,去除了光致抗蚀剂图案的薄部分以及钝化层和其下面的半导体层的部分,但是未除去光致抗蚀剂图案的厚部下方的钝化层的部分。 然后,形成多个像素电极,冗余栅极焊盘和冗余数据焊盘。

    Method of manufacturing a thin film transistor array panel that includes using chemical mechanical polishing of a conductive film to form a pixel electrode connected to a drain electrode
    7.
    发明授权
    Method of manufacturing a thin film transistor array panel that includes using chemical mechanical polishing of a conductive film to form a pixel electrode connected to a drain electrode 有权
    制造薄膜晶体管阵列面板的方法,其包括使用导电膜的化学机械抛光来形成连接到漏电极的像素电极

    公开(公告)号:US07541225B2

    公开(公告)日:2009-06-02

    申请号:US11332076

    申请日:2006-01-13

    IPC分类号: H01L21/84

    CPC分类号: H01L27/1288 H01L27/1214

    摘要: A method of manufacturing a thin film transistor array panel is provided, the method including forming a thin film transistor having a gate electrode, a source electrode, and a drain electrode on a substrate, forming a passivation layer on the source electrode and the drain electrode, forming a photoresist film on the passivation layer, selectively etching the passivation layer using the photoresist film as a mask, forming a conductive film, and removing the photoresist film along with the conductive film disposed on the photoresist film using a CMP (chemical mechanical polishing) process to form a pixel electrode being connected to the drain electrode.

    摘要翻译: 提供一种制造薄膜晶体管阵列面板的方法,该方法包括在衬底上形成具有栅电极,源电极和漏电极的薄膜晶体管,在源电极和漏电极上形成钝化层 在钝化层上形成光致抗蚀剂膜,使用光致抗蚀剂膜作为掩模选择性地蚀刻钝化层,形成导电膜,以及使用CMP(化学机械抛光)与设置在光致抗蚀剂膜上的导电膜一起除去光致抗蚀剂膜 )处理以形成连接到漏电极的像素电极。

    Thin film transistor array panel and manufacturing method thereof
    9.
    发明申请
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US20060194376A1

    公开(公告)日:2006-08-31

    申请号:US11332076

    申请日:2006-01-13

    IPC分类号: H01L21/84 H01L31/113

    CPC分类号: H01L27/1288 H01L27/1214

    摘要: A method of manufacturing a thin film transistor array panel is provided, the method including forming a thin film transistor having a gate electrode, a source electrode, and a drain electrode on a substrate, forming a passivation layer on the source electrode and the drain electrode, forming a photoresist film on the passivation layer, selectively etching the passivation layer using the photoresist film as a mask, forming a conductive film, and removing the photoresist film along with the conductive film disposed on the photoresist film using a CMP (chemical mechanical polishing) process to form a pixel electrode being connected to the drain electrode.

    摘要翻译: 提供一种制造薄膜晶体管阵列面板的方法,该方法包括在衬底上形成具有栅电极,源电极和漏电极的薄膜晶体管,在源电极和漏电极上形成钝化层 在钝化层上形成光致抗蚀剂膜,使用光致抗蚀剂膜作为掩模选择性地蚀刻钝化层,形成导电膜,以及使用CMP(化学机械抛光)与设置在光致抗蚀剂膜上的导电膜一起除去光致抗蚀剂膜 )处理以形成连接到漏电极的像素电极。

    Thin film transistor array panel and manufacturing method thereof
    10.
    发明申请
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US20050082535A1

    公开(公告)日:2005-04-21

    申请号:US10926719

    申请日:2004-08-26

    CPC分类号: G02F1/1368 G02F1/1339

    摘要: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.

    摘要翻译: 提供一种制造薄膜晶体管阵列面板的方法,包括:在基板上形成栅极线; 在栅极线上依次沉积栅极绝缘层和半导体层; 在半导体层上沉积下导电膜和上导电膜; 对上导电膜,下导电膜和半导体层进行光蚀刻; 沉积钝化层; 对所述钝化层进行光蚀刻以暴露所述上导电膜的第一和第二部分; 去除上导电膜的第一和第二部分以暴露下导电膜的第一和第二部分; 在下导电膜的第一和第二部分上形成像素电极和一对冗余电极,所述冗余电极暴露下导电膜的第二部分的一部分; 去除下导电膜的第二部分的暴露部分以暴露半导体层的一部分; 以及在半导体层的暴露部分上形成柱状间隔物。