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    DEVICE FOR MEASURING SURFACE CHARACTERISTICS OF A MATERIAL
    2.
    发明申请
    DEVICE FOR MEASURING SURFACE CHARACTERISTICS OF A MATERIAL 审中-公开

    公开(公告)号：US20200033395A1

    公开(公告)日：2020-01-30

    申请号：US16518730

    申请日：2019-07-22

    Applicant: IMEC VZW

    Inventor： Kristof Paredis ,  Umberto Celano ,  Wilfried Vandervorst

    IPC: G01R31/26

    Abstract: A device is provided for electrically measuring surface characteristics of a sample. The device comprises at least one group of three electrodes: a first and second electrode spaced apart from each other and configured to be placed onto the surface of the sample, and a third electrode between the first two but isolated from these two electrodes by a one or more first insulators, wherein a second insulator further isolates the central electrode from the sample when the device is placed thereon. The three electrodes and the insulators are attached to a single or to multiple holders with conductors incorporated therein for allowing the coupling of the electrodes to power sources or measurement tools. The placement of the device onto a semiconductor sample creates a transistor with the sample surface acting as the channel. The device thereby allows the determination of the transistor characteristics of the sample in a straightforward way.

    Device for measuring surface characteristics of a material
    3.
    发明授权
    Device for measuring surface characteristics of a material 有权

    公开(公告)号：US11125805B2

    公开(公告)日：2021-09-21

    申请号：US16518730

    申请日：2019-07-22

    Applicant: IMEC VZW

    Inventor： Kristof Paredis ,  Umberto Celano ,  Wilfried Vandervorst

    IPC: G01R31/20 ,  G01R31/26 ,  G01N27/00

    Abstract: A device is provided for electrically measuring surface characteristics of a sample. The device comprises at least one group of three electrodes: a first and second electrode spaced apart from each other and configured to be placed onto the surface of the sample, and a third electrode between the first two but isolated from these two electrodes by a one or more first insulators, wherein a second insulator further isolates the central electrode from the sample when the device is placed thereon. The three electrodes and the insulators are attached to a single or to multiple holders with conductors incorporated therein for allowing the coupling of the electrodes to power sources or measurement tools. The placement of the device onto a semiconductor sample creates a transistor with the sample surface acting as the channel. The device thereby allows the determination of the transistor characteristics of the sample in a straightforward way.

    DEVICE AND METHOD FOR TWO DIMENSIONAL ACTIVE CARRIER PROFILING OF SEMICONDUCTOR COMPONENTS
    4.
    发明申请
    DEVICE AND METHOD FOR TWO DIMENSIONAL ACTIVE CARRIER PROFILING OF SEMICONDUCTOR COMPONENTS 审中-公开

    公开(公告)号：US20190025341A1

    公开(公告)日：2019-01-24

    申请号：US16026428

    申请日：2018-07-03

    Applicant: IMEC vzw

    Inventor： Kristof Paredis ,  Umberto Celano ,  Wilfried Vandervorst ,  Oberon Dixon-Luinenburg

    IPC: G01Q60/30

    Abstract: A method of measuring an electrical characteristic of a current path is disclosed. In one aspect, the method includes a probe for scanning spreading resistance microscopy (SSRM), a test sample contacted by the probe, a back contact on the test sample, a bias voltage source and a logarithmic SSRM amplifier, when a modulation at a predefined frequency is applied to either the contact force of the probe or to the bias voltage, the device comprising electronic circuitry for producing in real time a signal representative of the electrical characteristic, according to the formula lognA=±VSSRM±logn(dV)+Vmultiplier.

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