-
公开(公告)号：US09641153B2
公开(公告)日：2017-05-02
申请号：US14932303
申请日：2015-11-04
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC classification number: H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
Abstract: A method of forming a resonator by providing a first layer; forming a sacrificial layer on the first layer; forming a capping layer on the sacrificial layer; forming at least one etching aperture in the capping layer; forming at least one additional aperture having a different size than the at least one etching aperture; forming a cavity and releasing a resonator structure within the cavity by removing the sacrificial layer by etching via the at least one etching aperture; sealing the at least one etching aperture; and forming a lining in the at least one additional aperture.
-
公开(公告)号：US09209778B2
公开(公告)日：2015-12-08
申请号：US13834486
申请日：2013-03-15
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC classification number: H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
Abstract: Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions.
Abstract translation: 实施例涉及能够应用最大可用片上电压的MEMS谐振器结构和方法。 在一个实施例中，MEMS谐振器包括接地电位和谐振器的间隙电极之间的连接。 实施例还涉及不太复杂的制造系统和方法，并且能够制造尺寸减小的MEMS谐振器。
-
公开(公告)号：US20160126926A1
公开(公告)日：2016-05-05
申请号：US14932303
申请日：2015-11-04
Applicant: INFINEON TECHNOLOGIES DRESDEN GMBH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC classification number: H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
Abstract: Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions.
Abstract translation: 实施例涉及能够应用最大可用片上电压的MEMS谐振器结构和方法。 在一个实施例中，MEMS谐振器包括接地电位和谐振器的间隙电极之间的连接。 实施例还涉及不太复杂的制造系统和方法，并且能够制造尺寸减小的MEMS谐振器。
-
公开(公告)号：US20140266484A1
公开(公告)日：2014-09-18
申请号：US13834486
申请日：2013-03-15
Applicant: INFINEON TECHNOLOGIES DRESDEN GMBH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC classification number: H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
Abstract: Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions.
Abstract translation: 实施例涉及能够应用最大可用片上电压的MEMS谐振器结构和方法。 在一个实施例中，MEMS谐振器包括接地电位和谐振器的间隙电极之间的连接。 实施例还涉及不太复杂的制造系统和方法，并且能够制造尺寸减小的MEMS谐振器。
-
-
-
Search Results
4
records
(took 0.011 seconds)
