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公开(公告)号：US10060816B2
公开(公告)日：2018-08-28
申请号：US15372992
申请日：2016-12-08
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Andre Roeth , Bernhard Winkler , Boris Binder
CPC classification number: G01L9/0072 , B81B2201/0264 , B81B2203/0127 , B81C1/00158 , G01L9/0041 , G01L9/0073
Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.
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2.发明申请SYSTEMS AND METHODS FOR HORIZONTAL INTEGRATION OF ACCELERATION SENSOR STRUCTURES 审中-公开用于加速传感器结构的水平积分的系统和方法公开(公告)号：US20160185594A1
公开(公告)日：2016-06-30
申请号：US15064916
申请日：2016-03-09
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Andre Roeth , Steffen Bieselt
IPC: B81B7/02
CPC classification number: B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2207/015 , B81C1/00246 , B81C2203/0764 , H01L21/3065 , H01L29/84
Abstract: Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.
Abstract translation: 实施例涉及集成电路传感器，更具体地涉及集成在集成电路结构中的传感器和用于产生传感器的方法。 在一个实施例中，传感器装置包括衬底; 衬底中的第一沟槽; 第一可移动元件，其通过彼此间隔开并布置在第一可移动元件的周边的第一多个支撑元件悬挂在第一沟槽中; 以及布置在所述基板上以密封所述第一沟槽的第一层，从而提供包含所述第一可移动元件和所述第一多个支撑元件的第一空腔。
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公开(公告)号：US09376314B2
公开(公告)日：2016-06-28
申请号：US14315979
申请日：2014-06-26
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Boris Binder
CPC classification number: B81C1/00246 , B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81C2203/0721 , B81C2203/0735 , G01D5/145 , G01L9/0073
Abstract: A method for manufacturing a micromechanical system includes forming in a Front-End-of-Line (FEOL) process transistors in a transistor region; after the FEOL-process, forming a sacrificial layer; structuring the sacrificial layer to form a structured sacrificial layer; forming a functional layer at least partially covering the structured sacrificial layer; and removing the sacrificial layer to create a cavity.
Abstract translation: 一种用于制造微机械系统的方法包括在晶体管区域中的前端（FEOL）处理晶体管中形成; 在FEOL工艺之后，形成牺牲层; 构造牺牲层以形成结构化牺牲层; 形成至少部分地覆盖所述结构化牺牲层的功能层; 并去除牺牲层以形成空腔。
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公开(公告)号：US20160126926A1
公开(公告)日：2016-05-05
申请号：US14932303
申请日：2015-11-04
Applicant: INFINEON TECHNOLOGIES DRESDEN GMBH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC classification number: H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
Abstract: Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions.
Abstract translation: 实施例涉及能够应用最大可用片上电压的MEMS谐振器结构和方法。 在一个实施例中，MEMS谐振器包括接地电位和谐振器的间隙电极之间的连接。 实施例还涉及不太复杂的制造系统和方法，并且能够制造尺寸减小的MEMS谐振器。
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公开(公告)号：US20160060106A1
公开(公告)日：2016-03-03
申请号：US14835001
申请日：2015-08-25
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann
IPC: B81C1/00
CPC classification number: B81C1/00619 , B81C1/00047 , B81C1/00476 , G01N27/414 , G01N27/4473 , G01N33/48721 , H01L21/30604 , H01L29/06
Abstract: Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.
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Patent Agency Ranking
公开(公告)号：US20140266484A1
公开(公告)日：2014-09-18
申请号：US13834486
申请日：2013-03-15
Applicant: INFINEON TECHNOLOGIES DRESDEN GMBH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC classification number: H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
Abstract: Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions.
Abstract translation: 实施例涉及能够应用最大可用片上电压的MEMS谐振器结构和方法。 在一个实施例中，MEMS谐振器包括接地电位和谐振器的间隙电极之间的连接。 实施例还涉及不太复杂的制造系统和方法，并且能够制造尺寸减小的MEMS谐振器。
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公开(公告)号：US10683203B2
公开(公告)日：2020-06-16
申请号：US15951489
申请日：2018-04-12
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt
Abstract: A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.
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公开(公告)号：US09938133B2
公开(公告)日：2018-04-10
申请号：US15097808
申请日：2016-04-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Mohsin Nawaz , Alfons Dehe , Heiko Froehlich , Alessia Scire , Steffen Bieselt
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0136 , B81C1/00166 , B81C1/00182 , B81C2201/013
Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.
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公开(公告)号：US09896329B2
公开(公告)日：2018-02-20
申请号：US15208975
申请日：2016-07-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC classification number: B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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公开(公告)号：US20170297895A1
公开(公告)日：2017-10-19
申请号：US15097808
申请日：2016-04-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Mohsin Nawaz , Alfons Dehe , Heiko Froehlich , Alessia Scire , Steffen Bieselt
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0136 , B81C1/00166 , B81C1/00182 , B81C2201/013
Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.
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