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公开(公告)号：US10683203B2
公开(公告)日：2020-06-16
申请号：US15951489
申请日：2018-04-12
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt
Abstract: A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.
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公开(公告)号：US09938133B2
公开(公告)日：2018-04-10
申请号：US15097808
申请日：2016-04-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Mohsin Nawaz , Alfons Dehe , Heiko Froehlich , Alessia Scire , Steffen Bieselt
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0136 , B81C1/00166 , B81C1/00182 , B81C2201/013
Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.
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公开(公告)号：US09896329B2
公开(公告)日：2018-02-20
申请号：US15208975
申请日：2016-07-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC classification number: B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
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公开(公告)号：US20170297895A1
公开(公告)日：2017-10-19
申请号：US15097808
申请日：2016-04-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Mohsin Nawaz , Alfons Dehe , Heiko Froehlich , Alessia Scire , Steffen Bieselt
CPC classification number: B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0136 , B81C1/00166 , B81C1/00182 , B81C2201/013
Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.
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公开(公告)号：US09641153B2
公开(公告)日：2017-05-02
申请号：US14932303
申请日：2015-11-04
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
CPC classification number: H03H9/2452 , B81B3/0078 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C1/00301 , B81C1/00396 , B81C2203/0145 , H03H3/0072 , H03H3/0073 , H03H9/02259 , H03H9/2463 , H03H2009/02291 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
Abstract: A method of forming a resonator by providing a first layer; forming a sacrificial layer on the first layer; forming a capping layer on the sacrificial layer; forming at least one etching aperture in the capping layer; forming at least one additional aperture having a different size than the at least one etching aperture; forming a cavity and releasing a resonator structure within the cavity by removing the sacrificial layer by etching via the at least one etching aperture; sealing the at least one etching aperture; and forming a lining in the at least one additional aperture.
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Patent Agency Ranking
公开(公告)号：US20170015546A1
公开(公告)日：2017-01-19
申请号：US15208975
申请日：2016-07-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Froehlich , Alessia Scire , Maik Stegemann , Bernhard Winkler , Andre Roeth , Steffen Bieselt , Mirko Vogt
CPC classification number: B81C1/0015 , B81B3/0078 , B81B2201/0235 , B81B2203/0118 , B81B2203/0163
Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.
Abstract translation: 本公开涉及一种集成半导体器件，包括半导体衬底; 形成在半导体衬底中的腔; 所述半导体衬底的传感器部分经由所述半导体衬底和所述传感器部分互连的所述半导体衬底的悬置部分在所述空腔的一侧偏转地悬挂在所述空腔中，其中所述悬架部分沿着所述腔的侧面的延伸为 小于腔的所述侧的延伸部。
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7.发明授权Systems and methods for horizontal integration of acceleration sensor structures 有权加速度传感器结构水平整合的系统和方法公开(公告)号：US09330929B1
公开(公告)日：2016-05-03
申请号：US14512916
申请日：2014-10-13
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Fröhlich , Mirko Vogt , Maik Stegemann , Andre Röth , Steffen Bieselt
IPC: H01L29/84 , H01L29/04 , H01L29/66 , H01L29/06 , H01L21/3065
CPC classification number: B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2207/015 , B81C1/00246 , B81C2203/0764 , H01L21/3065 , H01L29/84
Abstract: Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.
Abstract translation: 实施例涉及集成电路传感器，更具体地涉及集成在集成电路结构中的传感器和用于产生传感器的方法。 在一个实施例中，传感器装置包括衬底; 衬底中的第一沟槽; 第一可移动元件，其通过彼此间隔开并布置在第一可移动元件的周边的第一多个支撑元件悬挂在第一沟槽中; 以及布置在所述基板上以密封所述第一沟槽的第一层，从而提供包含所述第一可移动元件和所述第一多个支撑元件的第一空腔。
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公开(公告)号：US09136328B2
公开(公告)日：2015-09-15
申请号：US13648170
申请日：2012-10-09
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Alessia Scire , Steffen Bieselt
IPC: H01L21/76 , H01L29/06 , H01L21/324 , H01L29/78 , B81C1/00
CPC classification number: H01L21/764 , B81B2203/0315 , B81C1/00047 , B81C2201/0116 , H01L21/3247 , H01L21/7624 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/7833
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在衬底内形成第一空腔。 第一空腔设置在基板的一部分下方。 该方法还包括在第一腔内形成第一支柱以支撑衬底的该部分。
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9.发明申请SENSOR STRUCTURES, SYSTEMS AND METHODS WITH IMPROVED INTEGRATION AND OPTIMIZED FOOTPRINT 有权传感器结构，系统和方法与改进的集成和优化的FOOTPRINT公开(公告)号：US20150210533A1
公开(公告)日：2015-07-30
申请号：US14163205
申请日：2014-01-24
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch , Heiko Fröhlich , Mirko Vogt , Maik Stegemann , Andre Röth , Bernhard Winkler , Boris Binder
CPC classification number: G01L9/0072 , B81B2201/0264 , B81B2203/0127 , B81C1/00158 , G01L9/0041 , G01L9/0073
Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.
Abstract translation: 实施例涉及传感器，更具体地涉及形成传感器的结构和方法，所述传感器更容易制造为集成部件并提供传感器膜，薄片或其它可移动元件的改进偏转。 在实施例中，传感器包括用于薄片，膜或其它可移动元件的支撑结构。 支撑结构包括保持或承载可移动元件的多个支撑元件。 支撑元件可以包括单个点或脚状元件，而不是传统的互连框架，其能够改善可移动元件的运动，在制造期间更容易地去除可移动元件和基板之间的牺牲层，并且具有更有利的偏移比， 其他好处。
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公开(公告)号：US08957490B2
公开(公告)日：2015-02-17
申请号：US13930167
申请日：2013-06-28
Applicant: Infineon Technologies Dresden GmbH
Inventor： Thoralf Kautzsch
IPC: H01L31/0232 , H01L31/0352
CPC classification number: H01L31/02327 , H01L31/02363 , H01L31/0352 , Y02E10/50
Abstract: Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.
Abstract translation: 实施例涉及用于硅器件的掩埋结构，其可以改变光路并从而形成光阱。 光阱的实施例可以将更多的光耦合到装置的感光表面，而不是反射光或者更深地吸收光，从而可以提高效率，改进装置定时并提供本领域技术人员所理解的其它优点 。
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