公开(公告)号：US20150189797A1

公开(公告)日：2015-07-02

申请号：US14126271

申请日：2013-09-27

申请人： Intel Corporation

发明人： Sasha Oster ,  Sarah Haney ,  Weng Hong Teh ,  Feras Eid

IPC分类号： H05K9/00 ,  B81B7/02 ,  B32B38/10 ,  H05K1/11 ,  B32B37/24 ,  B81B7/00 ,  G06F1/18

CPC分类号： H05K9/0052 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/243 ,  B32B2457/00 ,  B81B7/0029 ,  B81B7/0032 ,  B81B7/02 ,  B81C1/0023 ,  G06F1/182 ,  H01L21/568 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/1461 ,  H05K1/115 ,  Y10T156/10 ,  H01L2924/00

摘要： Magnetic field shielding material with high relative permeability incorporated into a build-up package, for example to restrict a field of a magnet integrated with the build-up to a target device configured to operate in the field. In embodiments, a first device is physically coupled to the build-up. In embodiments, a magnetic field shielding material is disposed in contact with the build-up and in proximity to the first device to restrict a magnetic field either to a region occupied by the first device or to a region exclusive of the first device. A field shielding material may be disposed within build-up near a permanent magnet also within the build-up to reduce exposure of another device, such as an IC, to the magnetic field without reducing MEMS device exposure.

摘要翻译： 具有高的相对磁导率的磁场屏蔽材料被并入到积聚封装中，例如将与积聚物集成的磁体的场限制到被配置为在现场操作的目标装置。 在实施例中，第一设备物理地耦合到建立。 在实施例中，磁场屏蔽材料设置成与积层接触并且靠近第一装置，以将磁场限制到由第一装置占据的区域或不包括第一装置的区域。 场屏蔽材料也可以在堆积物内的永磁体附近的堆积内设置，以减少诸如IC之类的其它器件（例如IC）的暴露，而不会降低MEMS器件的暴露。

公开(公告)号：US09791470B2

公开(公告)日：2017-10-17

申请号：US14141759

申请日：2013-12-27

申请人： Intel Corporation

发明人： Feras Eid ,  Sasha N. Oster ,  Kyu Oh Lee ,  Sarah Haney

IPC分类号： H01L27/22 ,  G01P1/04 ,  G01P15/097 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC分类号： G01P1/04 ,  B81B3/0027 ,  B81B7/007 ,  B81B7/008 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/094 ,  B81C1/00238 ,  B81C1/00246 ,  B81C1/00333 ,  B81C1/00547 ,  B81C2201/056 ,  B81C2203/0172 ,  B81C2203/0714 ,  B81C2203/0792 ,  G01P15/097 ,  H01L27/22 ,  Y10T29/49075

摘要： Magnet placement is described for integrated circuit packages. In one example, a terminal is applied to a magnet. The magnet is then placed on a top layer of a substrate with solder between the terminal and the top layer, and the solder is reflowed to attach the magnet to the substrate.

公开(公告)号：US09345184B2

公开(公告)日：2016-05-17

申请号：US14126271

申请日：2013-09-27

申请人： Intel Corporation

发明人： Sasha Oster ,  Sarah Haney ,  Weng Hong Teh ,  Feras Eid

IPC分类号： H05K9/00 ,  H01L23/552 ,  H01L23/00 ,  B32B37/24 ,  B32B38/10 ,  B81B7/00 ,  B81B7/02 ,  G06F1/18 ,  H05K1/11 ,  H01L21/56

CPC分类号： H05K9/0052 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/243 ,  B32B2457/00 ,  B81B7/0029 ,  B81B7/0032 ,  B81B7/02 ,  B81C1/0023 ,  G06F1/182 ,  H01L21/568 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/1461 ,  H05K1/115 ,  Y10T156/10 ,  H01L2924/00

摘要： Magnetic field shielding material with high relative permeability incorporated into a build-up package, for example to restrict a field of a magnet integrated with the build-up to a target device configured to operate in the field. In embodiments, a first device is physically coupled to the build-up. In embodiments, a magnetic field shielding material is disposed in contact with the build-up and in proximity to the first device to restrict a magnetic field either to a region occupied by the first device or to a region exclusive of the first device. A field shielding material may be disposed within build-up near a permanent magnet also within the build-up to reduce exposure of another device, such as an IC, to the magnetic field without reducing MEMS device exposure.

摘要翻译： 具有高的相对磁导率的磁场屏蔽材料被并入到积聚封装中，例如将与积聚物集成的磁体的场限制到被配置为在现场操作的目标装置。 在实施例中，第一设备物理地耦合到建立。 在实施例中，磁场屏蔽材料设置成与积层接触并且靠近第一装置，以将磁场限制到由第一装置占据的区域或不包括第一装置的区域。 场屏蔽材料也可以在堆积物内的永磁体附近的堆积内设置，以减少诸如IC之类的其它器件（例如IC）的暴露，而不会降低MEMS器件的暴露。

公开(公告)号：US09501068B2

公开(公告)日：2016-11-22

申请号：US15019740

申请日：2016-02-09

申请人： INTEL CORPORATION

发明人： Kyu Oh Lee ,  Sasha N. Oster ,  Feras Eid ,  Sarah Haney

IPC分类号： G05D16/20 ,  B81C1/00 ,  B81B7/00 ,  B81B3/00

CPC分类号： G05D16/2026 ,  B81B3/0027 ,  B81B7/007 ,  B81B7/008 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/094 ,  B81C1/00158 ,  B81C1/00238 ,  B81C1/00246 ,  B81C1/00333 ,  B81C1/00547 ,  B81C2201/056 ,  B81C2203/0172 ,  B81C2203/0714 ,  B81C2203/0792

摘要： A pressure sensor is integrated into an integrated circuit fabrication and packaging flow. In one example, a releasable layer is formed over a removable core. A first dielectric layer is formed. A metal layer is patterned to form conductive metal paths and to form a diaphragm with the metal. A second dielectric layer is formed over the metal layer and the diaphragm. A second metal layer is formed to connect with formed vias and to form a metal mesh layer over the diaphragm. The first dielectric layer is etched under the diaphragm to form a cavity and the cavity is covered to form a chamber adjoining the diaphragm.

摘要翻译： 压力传感器集成到集成电路制造和封装流程中。 在一个示例中，在可移除的核上形成可释放层。 形成第一介电层。 图案化金属层以形成导电金属路径并与金属形成隔膜。 第二电介质层形成在金属层和隔膜上。 形成第二金属层以与形成的通孔连接并在隔膜上形成金属网格层。 第一电介质层被刻蚀在隔膜下面以形成空腔，并且空腔被覆盖以形成与隔膜相邻的室。

公开(公告)号：US20150355035A1

公开(公告)日：2015-12-10

申请号：US14296782

申请日：2014-06-05

申请人： Intel Corporation

发明人： Feras Eid ,  Sasha Oster ,  Sarah Haney ,  Kyu Oh Lee

IPC分类号： G01K11/26

CPC分类号： G01K7/32 ,  Y10T29/4913

摘要： This disclosure relates generally to an electronic assembly and methods that include a dielectric material forming a cavity, a magnet positioned to induce a magnetic field within the cavity, a conductive trace positioned, at least in part, within the cavity, and a frequency detection circuit configured to detect the frequency of the maximal electromotive force as induced and produce an output proportional to a temperature of the conductive trace. The conductive trace resonates within the cavity based on a temperature-dependent resonant frequency of the conductive trace and a sinusoidal current induced through the conductive trace by a current source, the sinusoidal current induces a maximal electromotive force when a frequency of the sinusoidal current has an approximately equal magnitude to the temperature-dependent resonant frequency of the conductive trace, and the maximal electromotive force, as induced, has a substantially equal frequency as the temperature-dependent resonant frequency of the conductive trace.

摘要翻译： 本公开总体上涉及电子组件和方法，其包括形成空腔的介电材料，定位成在空腔内引起磁场的磁体，至少部分地位于空腔内的导电迹线，以及频率检测电路 被配置为检测最大电动势的频率，并且产生与导电迹线的温度成比例的输出。 导电迹线基于导电迹线的依赖于​​温度的谐振频率和通过电流源通过导电迹线感应的正弦电流在谐振腔内谐振，当正弦电流的频率具有正弦电流时，正弦电流感应出最大电动势 与导电迹线的温度相关的谐振频率大致相等，并且如感应的最大电动势具有与导电迹线的温度相关的谐振频率基本上相等的频率。