公开(公告)号：US20030017642A1

公开(公告)日：2003-01-23

申请号：US09910380

申请日：2001-07-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard A. Conti ,  Prakash Chimanlal Dev ,  David M. Dobuzinsky ,  Daniel C. Edelstein ,  Gill Y. Lee ,  Kia-Seng Low ,  Padraic C. Shafer ,  Alexander Simpson ,  Peter Wrschka

IPC: H01L035/24 ,  H01L051/00 ,  H01L051/40 ,  H01L023/58 ,  H01L021/302 ,  H01L021/461 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/28185 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28194 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

公开(公告)号：US20020197937A1

公开(公告)日：2002-12-26

申请号：US09887790

申请日：2001-06-22

Applicant: International Business Machines Corporation

Inventor： Laertis Economikos ,  Alexander Simpson

IPC: B24B001/00 ,  B24B007/19

CPC classification number: H01L21/31053 ,  B24B37/042

Abstract: The invention provides fixed-abrasive chemical-mechanical polishing processes which are effective in rapidly reducing thickness of oxide layers, especially siliceous oxides. The processes of the invention are preferably characterized by at least one step involving simultaneous use of a fixed-abrasive polishing element and an aqueous liquid medium containing an abrasive. Where the original oxide layer has topographic variation, the thickness reduction technique of the invention may be preceeded by topography reduction step using a fixed-abrasive and an aqueous medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide layer on the substrate.

Abstract translation: 本发明提供固定研磨化学机械抛光方法，其有效地快速减少氧化物层的厚度，特别是二氧化硅。 本发明的方法优选的特征在于包括同时使用固定研磨抛光元件和含有磨料的含水液体介质的至少一个步骤。 在原始氧化物层具有地形变化的情况下，本发明的厚度减小技术可以在使用固定研磨剂和含有聚电解质的含水介质的地面还原步骤之前进行至少一部分抛光过程，所述抛光过程涉及减少 跨衬底上的氧化物层的地形变化（高差）。