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    Self-aligned borderless contacts
    1.
    发明申请
    Self-aligned borderless contacts 有权
    自由无边界接触

    公开(公告)号：US20030228752A1

    公开(公告)日：2003-12-11

    申请号：US10165264

    申请日：2002-06-06

    Applicant: International Business Machines Corporation

    Inventor： Jay W. Strane ,  Hiroyuki Akatsu ,  David M. Dobuzinsky

    IPC: H01L021/4763

    CPC classification number: H01L21/76897

    Abstract: A method for forming high-density self-aligned contacts and interconnect structures in a semiconductor device. A dielectric layer thick enough to contain both interconnect and contact structures is formed on a substrate. A patterned hardmask is formed on the dielectric layer to define both the interconnect and contact structures. The openings for interconnect features are first formed by partially etching the dielectric layer selective to the hardmask. A second mask (e.g., a resist) is used to define the contact openings, and the dielectric layer is etched through the second mask, also selective to the hardmask, to expose the diffusion regions to be contacted. The patterned hardmask is used to help define the contact openings. Conductive material is then deposited in the openings which results in contacts and interconnects that are self-aligned. By first forming the openings for both interconnect and contacts, savings in processing steps may be obtained.

    Abstract translation: 一种在半导体器件中形成高密度自对准触点和互连结构的方法。 在衬底上形成足够厚以容纳互连和接触结构的电介质层。 在电介质层上形成图形化的硬掩模以限定互连和接触结构。 用于互连特征的开口首先通过部分蚀刻对硬掩模有选择性的介电层而形成。 使用第二掩模（例如抗蚀剂）来限定接触开口，并且通过第二掩模蚀刻电介质层，也可以对硬掩模进行选择，以暴露待接触的扩散区域。 图案化的硬掩模用于帮助定义接触开口。 然后将导电材料沉积在开口中，这导致自对准的触点和互连。 通过首先形成用于互连和接触的开口，可以获得处理步骤的节省。

    Magnetic mirror for protection of consumable parts during plasma processing
    2.
    发明申请
    Magnetic mirror for protection of consumable parts during plasma processing 审中-公开
    用于在等离子体处理期间保护消耗部件的磁镜

    公开(公告)号：US20040112294A1

    公开(公告)日：2004-06-17

    申请号：US10729553

    申请日：2003-12-05

    Applicant: International Business Machines Corporation

    Inventor： Scott D. Allen ,  Bomy Chen ,  David M. Dobuzinsky ,  Richard S. Wise

    IPC: C23C016/00

    CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/3266

    Abstract: An apparatus for plasma processing of a wafer includes an annular structure including a magnet, where the structure is concentric with the wafer holder; the magnet generates a magnetic field for deflecting charged particles incident on the structure, thereby preventing damage to the structure by those particles. Accordingly, the structure may be of a material susceptible to erosion during the plasma processing, so that the magnetic field reduces that erosion. The cost of consumable parts in the apparatus is thus reduced. The annular structure may be characterized as a ring having a groove formed therein, with the magnet disposed in the groove. The magnet may be either a permanent magnet or an electromagnet.

    Abstract translation: 一种用于等离子体处理晶片的装置包括：包括磁体的环形结构，其中结构与晶片保持器同心; 磁体产生用于偏转入射到结构上的带电粒子的磁场，从而防止这些颗粒对结构的损害。 因此，该结构可能是在等离子体处理期间容易受到侵蚀的材料，使得磁场减少了侵蚀。 因此，装置中的消耗部件的成本降低。 环形结构可以被表征为具有形成在其中的凹槽的环，其中磁体设置在凹槽中。 磁体可以是永磁体或电磁体。

    Self-aligned borderless contacts
    4.
    发明申请
    Self-aligned borderless contacts 失效
    自由无边界接触

    公开(公告)号：US20040104409A1

    公开(公告)日：2004-06-03

    申请号：US10719861

    申请日：2003-11-21

    Applicant: International Business Machines Corporation

    Inventor： Jay W. Strane ,  Hiroyuki Akatsu ,  David M. Dobuzinsky

    IPC: H01L031/072

    CPC classification number: H01L21/76897

    Abstract: A method for forming high-density self-aligned contacts and interconnect structures in a semiconductor device. A dielectric layer thick enough to contain both interconnect and contact structures is formed on a substrate. A patterned hardmask is formed on the dielectric layer to define both the interconnect and contact structures. The openings for interconnect features are first formed by partially etching the dielectric layer selective to the hardmask. A second mask (e.g., a resist) is used to define the contact openings, and the dielectric layer is etched through the second mask, also selective to the hardmask, to expose the diffusion regions to be contacted. The patterned hardmask is used to help define the contact openings. Conductive material is then deposited in the openings which results in contacts and interconnects that are self-aligned. By first forming the openings for both interconnect and contacts, savings in processing steps may be obtained.

    Abstract translation: 一种在半导体器件中形成高密度自对准触点和互连结构的方法。 在衬底上形成足够厚以容纳互连和接触结构的电介质层。 在电介质层上形成图形化的硬掩模以限定互连和接触结构。 用于互连特征的开口首先通过部分蚀刻对硬掩模有选择性的介电层而形成。 使用第二掩模（例如抗蚀剂）来限定接触开口，并且通过第二掩模蚀刻电介质层，也可以对硬掩模进行选择，以暴露待接触的扩散区域。 图案化的硬掩模用于帮助定义接触开口。 然后将导电材料沉积在开口中，这导致自对准的触点和互连。 通过首先形成用于互连和接触的开口，可以获得处理步骤的节省。

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