公开(公告)号：US20190049403A1

公开(公告)日：2019-02-14

申请号：US15674265

申请日：2017-08-10

Applicant: International Business Machines Corporation

Inventor： Josephine B. Chang ,  Talia S. Gershon ,  Supratik Guha ,  Hendrik F. Hamann ,  Jiaxing Liu ,  Theodore G. van Kessel

IPC: G01N27/407 ,  G01N27/416

Abstract: Low power combustible gas sensors using a thermocouple design are provided. In one aspect, a combustible gas sensor includes: at least one first electrode; at least one second electrode formed from a dissimilar material from the first electrode; and a catalytic material at an active reaction junction between the first electrode and the second electrode, wherein the active reaction junction between the first electrode and the second electrode forms a thermocouple. A sensing device is including, e.g., multiple sensors, and a method for sensing combustible gas using the present sensors are also provided.

公开(公告)号：US20180308976A1

公开(公告)日：2018-10-25

申请号：US16011124

申请日：2018-06-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Isaac Lauer ,  Jiaxing Liu ,  Renee T. Mo

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/84 ,  H01L21/3065 ,  H01L29/10 ,  H01L21/306 ,  H01L21/324 ,  H01L29/66

CPC classification number: H01L29/7843 ,  H01L21/0217 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/845 ,  H01L29/1033 ,  H01L29/66568 ,  H01L29/66818 ,  H05K999/99

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

公开(公告)号：US09910021B2

公开(公告)日：2018-03-06

申请号：US14960564

申请日：2015-12-07

Applicant: International Business Machines Corporation

Inventor： Josephine B. Chang ,  Jiaxing Liu ,  Theodore G. van Kessel

IPC: G01N7/00 ,  G01N33/00 ,  G01L19/00 ,  G01N1/40

CPC classification number: G01N33/0014 ,  G01L19/0007 ,  G01N1/4044 ,  G01N33/0063

Abstract: Systems, devices, and methods are provided for detecting and measuring the concentration of non-reactive gases in a given environment, without having to increase the reactivity of the non-reactive gases through thermal heating. For example, a gas sensor device includes a sensing chamber, a chemical getter element disposed in the sensing chamber, and a pressure sensor device. The sensing chamber is configured to capture a gas sample. The chemical getter element is configured to remove reactive gas species of the gas sample through chemical reaction of the reactive gas species with the chemical getter element at room temperature. The pressure sensor device is configured to measure a pressure of non-reactive gas species of the gas sample, which remains in the sensing chamber after removal of the reactive gas species from the sensing chamber. The pressure measurement is used to determine an amount of the non-reactive gas species present in the sample.

公开(公告)号：US20180040730A1

公开(公告)日：2018-02-08

申请号：US15606937

申请日：2017-05-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Isaac Lauer ,  Jiaxing Liu ,  Renee T. Mo

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/324 ,  H01L29/66 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/10

CPC classification number: H01L29/7843 ,  H01L21/0217 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/845 ,  H01L29/1033 ,  H01L29/66568 ,  H01L29/66818

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

公开(公告)号：US10361304B2

公开(公告)日：2019-07-23

申请号：US16011124

申请日：2018-06-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Isaac Lauer ,  Jiaxing Liu ,  Renee T. Mo

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3065 ,  H01L29/10 ,  H01L21/324 ,  H01L21/306 ,  H01L21/84

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

公开(公告)号：US20170160157A1

公开(公告)日：2017-06-08

申请号：US14960564

申请日：2015-12-07

Applicant: International Business Machines Corporation

Inventor： Josephine B. Chang ,  Jiaxing Liu ,  Theodore G. van Kessel

IPC: G01L19/00 ,  G01N33/00 ,  G01N1/40

CPC classification number: G01N33/0014 ,  G01L19/0007 ,  G01N1/4044 ,  G01N33/0063

Abstract: Systems, devices, and methods are provided for detecting and measuring the concentration of non-reactive gases in a given environment, without having to increase the reactivity of the non-reactive gases through thermal heating. For example, a gas sensor device includes a sensing chamber, a chemical getter element disposed in the sensing chamber, and a pressure sensor device. The sensing chamber is configured to capture a gas sample. The chemical getter element is configured to remove reactive gas species of the gas sample through chemical reaction of the reactive gas species with the chemical getter element at room temperature. The pressure sensor device is configured to measure a pressure of non-reactive gas species of the gas sample, which remains in the sensing chamber after removal of the reactive gas species from the sensing chamber. The pressure measurement is used to determine an amount of the non-reactive gas species present in the sample.

公开(公告)号：US10935514B2

公开(公告)日：2021-03-02

申请号：US15674265

申请日：2017-08-10

Applicant: International Business Machines Corporation

Inventor： Josephine B. Chang ,  Talia S. Gershon ,  Supratik Guha ,  Hendrik F. Hamann ,  Jiaxing Liu ,  Theodore G. van Kessel

IPC: G01N27/407 ,  G01N27/416

Abstract: Low power combustible gas sensors using a thermocouple design are provided. In one aspect, a combustible gas sensor includes: at least one first electrode; at least one second electrode formed from a dissimilar material from the first electrode; and a catalytic material at an active reaction junction between the first electrode and the second electrode, wherein the active reaction junction between the first electrode and the second electrode forms a thermocouple. A sensing device is including, e.g., multiple sensors, and a method for sensing combustible gas using the present sensors are also provided.

公开(公告)号：US10050144B2

公开(公告)日：2018-08-14

申请号：US15606937

申请日：2017-05-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Isaac Lauer ,  Jiaxing Liu ,  Renee T. Mo

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H01L21/306 ,  H01L21/324 ,  H01L21/84

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.

公开(公告)号：US09793398B1

公开(公告)日：2017-10-17

申请号：US15226834

申请日：2016-08-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Isaac Lauer ,  Jiaxing Liu ,  Renee T. Mo

IPC: H01L21/335 ,  H01L29/78 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/10 ,  H01L21/324 ,  H01L21/306 ,  H01L29/66

CPC classification number: H01L29/7843 ,  H01L21/0217 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/845 ,  H01L29/1033 ,  H01L29/66568 ,  H01L29/66818

Abstract: A method of forming a strained channel for a field effect transistor, including forming a sacrificial layer on a substrate, forming a channel layer on the sacrificial layer, forming a stressor layer on the channel layer, wherein the stressor layer applies a stress to the channel layer, forming at least one etching trench by removing at least a portion of the stressor layer, channel layer, and sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the sacrificial layer, and separates the stressor layer, channel layer, and sacrificial layer into two or more stressor islands, channel blocks, and sacrificial slabs, and removing the sacrificial slabs to release the channel blocks from the substrate using a selective etch, wherein the channel blocks adhere to the substrate surface.