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    ION IMPLANT SYSTEM HAVING GRID ASSEMBLY
    6.
    发明申请
    ION IMPLANT SYSTEM HAVING GRID ASSEMBLY 有权
    具有网格组件的离子植入系统

    公开(公告)号：US20150072461A1

    公开(公告)日：2015-03-12

    申请号：US14510109

    申请日：2014-10-08

    Applicant: Intevac, Inc.

    Inventor： Babak Adibi ,  Moon Chun

    IPC: H01L31/18 ,  H01J37/18 ,  H01J37/317

    CPC classification number: H01L31/1876 ,  C23C14/042 ,  C23C14/48 ,  H01J37/185 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/0437 ,  H01J2237/184 ,  H01J2237/201 ,  H01J2237/327 ,  H01J2237/3365 ,  H01L21/2236 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

    Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

    Abstract translation: 具有栅格组件的离子注入系统。 该系统包括构造成在等离子体区域中提供等离子体的等离子体源; 第一格栅板，其具有多个孔，其被配置为允许来自等离子体区域的离子通过，其中所述第一格栅板被配置为被电源偏置; 第二格栅板，其具有多个孔，其构造成允许离子穿过第一栅格板之后的离子通过，其中第二栅格板被配置为被电源偏置; 以及衬底保持器，其被配置为在所述离子通过所述第二栅格板之后将所述衬底支撑在所述衬底被注入的位置处的所述离子。

    SUBSTRATE PROCESSING SYSTEM AND METHOD
    7.
    发明申请
    SUBSTRATE PROCESSING SYSTEM AND METHOD 有权
    基板加工系统及方法

    公开(公告)号：US20130115764A1

    公开(公告)日：2013-05-09

    申请号：US13672652

    申请日：2012-11-08

    Applicant: Intevac, Inc.

    Inventor： Terry Pederson ,  Henry Hieslmair ,  Moon Chun ,  Vinay Prabhakar ,  Babak Adibi ,  Terry Bluck

    IPC: H01L21/677 ,  H01L21/265

    CPC classification number: H01L21/6833 ,  H01L21/26506 ,  H01L21/67745 ,  H01L21/6776 ,  H01L21/681 ,  H01L21/6831 ,  H01L31/1876 ,  H02N13/00 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.

    Abstract translation: 用于处理衬底的系统具有真空外壳和位于处理真空外壳内的处理区中的晶片的处理室。 提供两个轨道组件，一个在处理区域的每一侧。 两个卡盘阵列，每个在一个导轨组件上，使得每个卡盘阵列悬挂在一个导轨组件上并支撑多个卡盘。 轨道组件联接到升降机构，其将轨道放置在用于处理的上部位置，并且在较低位置处返回用于装载新晶片的卡盘组件。 拾取头组件将晶片从传送器装载到卡盘组件上。 拾取头具有从晶片的前侧拾取晶片的多个静电卡盘。 处理卡盘中的冷却通道用于产生气垫，以在由拾取头传送时帮助对准晶片。

    Substrate processing system and method
    9.
    发明授权
    Substrate processing system and method 有权
    基板加工系统及方法

    公开(公告)号：US09324598B2

    公开(公告)日：2016-04-26

    申请号：US13672652

    申请日：2012-11-08

    Applicant: INTEVAC, INC.

    Inventor： Terry Pederson ,  Henry Hieslmair ,  Moon Chun ,  Vinay Prabhakar ,  Babak Adibi ,  Terry Bluck

    IPC: H01L21/677 ,  H01L21/265 ,  H01L21/68 ,  H01L31/18 ,  H01L21/683

    CPC classification number: H01L21/6833 ,  H01L21/26506 ,  H01L21/67745 ,  H01L21/6776 ,  H01L21/681 ,  H01L21/6831 ,  H01L31/1876 ,  H02N13/00 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.

    Abstract translation: 用于处理衬底的系统具有真空外壳和位于处理真空外壳内的处理区中的晶片的处理室。 提供两个轨道组件，一个在处理区域的每一侧。 两个卡盘阵列，每个在一个导轨组件上，使得每个卡盘阵列悬挂在一个导轨组件上并支撑多个卡盘。 轨道组件联接到升降机构，其将轨道放置在用于处理的上部位置，并且在较低位置处返回用于装载新晶片的卡盘组件。 拾取头组件将晶片从传送器装载到卡盘组件上。 拾取头具有从晶片的前侧拾取晶片的多个静电卡盘。 处理卡盘中的冷却通道用于产生气垫，以在由拾取头传送时帮助对准晶片。

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