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公开(公告)号:US11694913B2
公开(公告)日:2023-07-04
申请号:US16716173
申请日:2019-12-16
Applicant: Intevac, Inc.
Inventor: Terry Bluck
IPC: H01L21/67 , H01L21/677 , C23C14/35 , H01L21/683 , C23C14/56
CPC classification number: H01L21/67173 , C23C14/35 , C23C14/566 , H01L21/67178 , H01L21/67196 , H01L21/67201 , H01L21/67706 , H01L21/67712 , H01L21/67742 , H01L21/67778 , H01L21/6831
Abstract: A processing system is provided, including a vacuum enclosure having a plurality of process windows and a continuous track positioned therein; a plurality of processing chambers attached sidewalls of the vacuum enclosures, each processing chamber about one of the process windows; a loadlock attached at one end of the vacuum enclosure and having a loading track positioned therein; at least one gate valve separating the loadlock from the vacuum enclosure; a plurality of substrate carriers configured to travel on the continuous track and the loading track; at least one track exchanger positioned within the vacuum enclosure, the track exchangers movable between a first position, wherein substrate carriers are made to continuously move on the continuous track, and a second position wherein the substrate carriers are made to transfer between the continuous track and the loading track.
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公开(公告)号:US11255013B2
公开(公告)日:2022-02-22
申请号:US15721638
申请日:2017-09-29
Applicant: Intevac, Inc.
Inventor: Terry Bluck , Babak Adibi
Abstract: The use of non-mass analyzed ion implanter is advantageous in such application as it generates ion implanting at different depth depending on the ions energy and mass. This allows for gaining advantage from lubricity offered as a result of the very light deposition on the surface, and at the same time the hardness provided by the intercalated ions implanted below it, providing benefits for cover glass, low E enhancement, and other similar materials. In further aspects, ion implantation is used to create other desirable film properties such anti-microbial and corrosion resistance.
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公开(公告)号:US11236013B2
公开(公告)日:2022-02-01
申请号:US16040468
申请日:2018-07-19
Applicant: Intevac, Inc.
Inventor: Terry Bluck , Wendell Thomas Blonigan
IPC: C23C14/54 , C03C17/34 , C23C14/34 , C23C14/00 , C23C14/10 , C23C14/08 , C23C14/50 , C08J7/04 , B05D5/06 , B32B17/10 , C03C17/42 , G02B1/111 , G02B1/116
Abstract: A processing system for forming an optical coating on a substrate is provided, wherein the optical coating including an anti-reflective coating and an oleophobic coating, the system comprising: a linear transport processing section configured for processing and transporting substrate carriers individually and one at a time in a linear direction; at least one evaporation processing system positioned in the linear transport processing system, the evaporation processing system configured to form the oleophobic coating; a batch processing section configured to transport substrate carriers in unison about an axis; at least one ion beam assisted deposition processing chamber positioned in the batch processing section, the ion beam assisted deposition processing chamber configured to deposit layer of the anti-reflective coating; a plurality of substrate carriers for mounting substrates; and, means for transferring the substrate carriers between the linear transport processing section and the batch processing section without exposing the substrate carrier to atmosphere.
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公开(公告)号:US11187834B2
公开(公告)日:2021-11-30
申请号:US16281013
申请日:2019-02-20
Applicant: Intevac, Inc.
Abstract: A multi-color dielectric coating is formed using interleaved layers of dielectric material, having alternating refractive index, to create reflections at selected wavelengths, thus appearing as different colors. Etching of selected layers at selected locations changes the color appearance of the etched locations, thus generating a coating having multiple colors. The thicknesses of the layers are chosen such that the path-length differences for reflections from different high-index layers are integer multiples of the wavelength for which the coating is designed.
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公开(公告)号:US10752987B2
公开(公告)日:2020-08-25
申请号:US15899064
申请日:2018-02-19
Applicant: Intevac, Inc.
Inventor: Patrick Leahey , Eric Lawson , Charles Liu , Terry Bluck , Kevin P. Fairbairn , Robert L. Ruck , Samuel D. Harkness, IV
Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.
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公开(公告)号:US10418260B2
公开(公告)日:2019-09-17
申请号:US15690211
申请日:2017-08-29
Applicant: Intevac, Inc.
Inventor: Terry Bluck , Terry Pederson , William Eugene Runstadler, Jr.
IPC: H01L21/67 , H01L21/673 , H01L21/677 , H01L21/687 , H01L21/768 , H01L21/56
Abstract: A system for fan out chip encapsulation processing is provided, wherein a plurality of microchips are encapsulated in molding compound, the system comprising: an atmospheric loading camber, configured to load substrates onto carriers in atmospheric environment; an entry loadlock arrangement configured to introduce the carriers into vacuum environment of the system; a degas chamber positioned downstream of the loadlock arrangement within the vacuum environment, the degas chamber comprising a heating element and a pumping arrangement to remove gases emitted from the molding compound; an etch chamber positioned downstream of the degas chamber and within the vacuum environment, the etch chamber comprising an ion beam generator and an ion neutralizer; a metal sputtering chamber positioned downstream of the etch chamber and inside the vacuum environment; and, an exit loadlock arrangement configured to remove carriers from the vacuum environment.
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公开(公告)号:US20190025469A1
公开(公告)日:2019-01-24
申请号:US16040468
申请日:2018-07-19
Applicant: Intevac, Inc.
Inventor: Terry Bluck , Wendell Thomas Blonigan
Abstract: A processing system for forming an optical coating on a substrate is provided, wherein the optical coating including an anti-reflective coating and an oleophobic coating, the system comprising: a linear transport processing section configured for processing and transporting substrate carriers individually and one at a time in a linear direction; at least one evaporation processing system positioned in the linear transport processing system, the evaporation processing system configured to form the oleophobic coating; a batch processing section configured to transport substrate carriers in unison about an axis; at least one ion beam assisted deposition processing chamber positioned in the batch processing section, the ion beam assisted deposition processing chamber configured to deposit layer of the anti-reflective coating; a plurality of substrate carriers for mounting substrates; and, means for transferring the substrate carriers between the linear transport processing section and the batch processing section without exposing the substrate carrier to atmosphere.
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公开(公告)号:US20180061689A1
公开(公告)日:2018-03-01
申请号:US15690211
申请日:2017-08-29
Applicant: Intevac, Inc.
Inventor: Terry Bluck , Terry Pederson , William Eugene Runstadler, JR.
IPC: H01L21/67 , H01L21/56 , H01L21/673 , H01L21/687 , H01L21/768
CPC classification number: H01L21/67201 , H01L21/561 , H01L21/565 , H01L21/67017 , H01L21/67121 , H01L21/67173 , H01L21/67207 , H01L21/67303 , H01L21/67754 , H01L21/6776 , H01L21/68721 , H01L21/768 , H01L2224/96 , H01L2924/3511
Abstract: A system for fan out chip encapsulation processing is provided, wherein a plurality of microchips are encapsulated in molding compound, the system comprising: an atmospheric loading camber, configured to load substrates onto carriers in atmospheric environment; an entry loadlock arrangement configured to introduce the carriers into vacuum environment of the system; a degas chamber positioned downstream of the loadlock arrangement within the vacuum environment, the degas chamber comprising a heating element and a pumping arrangement to remove gases emitted from the molding compound; an etch chamber positioned downstream of the degas chamber and within the vacuum environment, the etch chamber comprising an ion beam generator and an ion neutralizer; a metal sputtering chamber positioned downstream of the etch chamber and inside the vacuum environment; and, an exit loadlock arrangement configured to remove carriers from the vacuum environment.
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公开(公告)号:US09892890B2
公开(公告)日:2018-02-13
申请号:US13871936
申请日:2013-04-26
Applicant: Intevac, Inc.
Inventor: Terry Bluck , Alex Riposan
CPC classification number: H01J37/3423 , C23C14/3407 , C23C14/352 , C23C14/56 , C23C14/566 , H01J37/32779 , H01J37/3408 , H01J37/3411 , H01J37/3417 , H01J37/3435 , H01J37/3497
Abstract: A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the substrate travel direction, but is much narrower than the sputtering zone in the direction of substrate travel. Several narrow sputtering sources are installed so as to traverse the entire sputtering zone in all directions.
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10.
公开(公告)号:US20140102888A1
公开(公告)日:2014-04-17
申请号:US14046720
申请日:2013-10-04
Applicant: Intevac, Inc.
Inventor: Samuel D. Harkness, IV , Terry Bluck , Michael A. Russak , Quang N. Tran , David Ward Brown
IPC: C23C14/35
CPC classification number: C23C14/35 , C23C14/352 , H01J37/3405 , H01J37/3417 , H01J37/345
Abstract: A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.
Abstract translation: 提供了一种沉积系统,其中具有相似组成的导电靶位于彼此相对的位置。 该系统与衬底平行排列,衬底位于所得到的等离子体的外部,其主要被限制在两个阴极之间。 形成“等离子体笼”,其中碳原子与加速电子碰撞并被高度电离。 电子被捕获在等离子体笼内,而电离的碳原子沉积在衬底的表面上。 由于电子被限制在等离子体笼中,所以不会发生衬底损坏或加热。 另外,用于点燃和维持等离子体并从靶溅射碳原子的氩原子不会到达衬底,以避免损坏衬底。
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