公开(公告)号：US4629892A

公开(公告)日：1986-12-16

申请号：US558589

申请日：1983-12-06

申请人： Ian C. Carmichael ,  David J. Wilson ,  Anthony B. Dean

发明人： Ian C. Carmichael ,  David J. Wilson ,  Anthony B. Dean

IPC分类号： H01L31/0232 ,  H01L31/18 ,  G02F1/01

CPC分类号： H01L31/0232 ,  H01L31/1832

摘要： An optically immersed infra-red detector assembly comprises a planar sapphire substrate bearing a detector with radially disposed lens contact pads. The detector and contact pads are produced by etching a single portion of cadmium mercury telluride and have mutually coplanar surfaces. A hemispherical silicon optical immersion lens is bonded to the pads by applying dilute adhesive to lens-pad interfaces. Capillary attraction draws the adhesive between the lens and the pads to form very thin layers of adhesive after solvent evaporation. The adhesive layers ensure that an air gap is produced between the lens and detector, the gap being much smaller than the infra-red wavelength of interest as required to ensure optical immersion of the detector by the lens.

摘要翻译： 光学浸没的红外探测器组件包括一个平面蓝宝石衬底，其具有带有径向设置的透镜接触垫的检测器。 检测器和接触焊盘是通过蚀刻碲化镉镉的单一部分并具有相互共面的表面来制造的。 将半球硅光学浸没透镜通过将稀释粘合剂施加到透镜垫界面而结合到焊盘。 毛细吸引力吸引透镜和垫之间的粘合剂，以在溶剂蒸发后形成非常薄的粘合剂层。 粘合剂层确保在透镜和检测器之间产生气隙，该间隙远小于所需的红外波长，以确保检测器被透镜光学浸没。

公开(公告)号：US4494133A

公开(公告)日：1985-01-15

申请号：US386082

申请日：1982-06-07

申请人： Anthony B. Dean ,  Robin F. C. Farrow ,  Piero Migliorato ,  Anthony M. White ,  Gerald M. Williams

发明人： Anthony B. Dean ,  Robin F. C. Farrow ,  Piero Migliorato ,  Anthony M. White ,  Gerald M. Williams

IPC分类号： H01L31/10 ,  H01L27/14 ,  H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14692

摘要： A photo diode formed by a substrate of Cd.sub.x Hg.sub.1-x Te covered with a layer of CdTe forming a p-n junction. The substrate may be p-type in which case the layer is n-type or vice versa. An array of photo diodes may be formed by covering the substrate with semi-insulating CdTe and forming islets of In on the CdTe. Heating causes In to diffuse into the CdTe doping it n-type. This results in regions of n-type CdTe surrounded by semi-insulating CdTe each region forming, with the substrate, a photo diode. The heating also causes diffusion between the Cd.sub.x Hg.sub.1-x Te and CdTe to give a graded heterostructure. Electrical connections are made to the substrate, and each n-type region. The n-type CdTe region may alternatively be formed by molecular beam epitaxial growth techniques using a beam of In dopant.

摘要翻译： 由CdxHg1-xTe的衬底形成的光电二极管，其覆盖有形成p-n结的CdTe层。 衬底可以是p型，在这种情况下，该层为n型，反之亦然。 可以通过用半绝缘CdTe覆盖衬底并在CdTe上形成In的岛来形成光二极管阵列。 加热导致In扩散到CdTe掺杂n型。 这导致由半绝缘CdTe围绕的n型CdTe的区域，每个区域与衬底形成光电二极管。 加热也导致CdxHg1-xTe和CdTe之间的扩散，从而产生渐变异质结构。 电连接到基板和每个n型区域。 可以通过使用In掺杂剂的束的分子束外延生长技术来形成n型CdTe区域。

公开(公告)号：US5321290A

公开(公告)日：1994-06-14

申请号：US178556

申请日：1980-07-29

申请人： Anthony B. Dean ,  Peter N. J. Dennis ,  Charles T. Elliott

发明人： Anthony B. Dean ,  Peter N. J. Dennis ,  Charles T. Elliott

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/09 ,  H01L25/00 ,  G01T1/22 ,  G02C26/10

CPC分类号： H01L31/09 ,  H01L27/14669 ,  H01L31/035281 ,  Y02E10/50

摘要： A thermal imaging device having both serial and parallel content is provided by a number of infra-red radiation detector strips supported side by side on an insulating substrate, each strip having a number of read-out regions. To allow connection from the side of the device to the innermost detector strips, conductors err end across outer strips. These conductors may extend over the strips and over insulating material therebetween. Alternatively the conductors may be in the form of conductive tracks embodied in a substrate of semiconductor material. The strips may be indented at the read-out regions to provide, with very close spacing, sufficient room for contact between the read-out regions and the conductive tracks. Preformed aluminium contact pads may be used between bridging links to the read-out regions and the conductive tracks the contact pads and preformed tracks being centered during preformation to ensure a good ohmic contact.

摘要翻译： 具有串行和并行内容的热成像装置由在绝缘基板上并排支撑的多个红外辐射检测器带提供，每个条带具有多个读出区域。 为了允许从设备的侧面到最内侧的检测器条的连接，导体绕着外部条纹结束。 这些导体可以在条带之间延伸并且在它们之间的绝缘材料上方延伸。 或者，导体可以是实现在半导体材料的衬底中的导电轨迹的形式。 条带可以在读出区域上缩进，以非常紧密的间距提供读出区域和导电轨迹之间的足够的接触空间。 预成形的铝接触焊盘可以在与读出区域和导电轨道的桥接部分之间用于接触焊盘和预成型轨道在预形成过程中居中以确保良好的欧姆接触。

公开(公告)号：US06624451B2

公开(公告)日：2003-09-23

申请号：US09860770

申请日：2001-05-21

申请人： Timothy Ashley ,  Anthony B. Dean ,  Charles T. Elliott ,  Timothy J. Phillips

发明人： Timothy Ashley ,  Anthony B. Dean ,  Charles T. Elliott ,  Timothy J. Phillips

IPC分类号： H01L310328

CPC分类号： H01L29/66522 ,  H01L29/1033 ,  H01L29/105 ,  H01L29/1079 ,  H01L29/205

摘要： A field effect transistor (FET) is of the type which employs base biasing to depress the intrinsic contribution to conduction and reduce leakage current. It incorporates four successive layers (102 to 108): a p+ InSb base layer (102), a p+ InAlSb barrier layer (104), a &pgr; intrinsic layer (106) and an insulating SiO2 layer (108); p+ source and drain regions (110, 112) are implanted in the intrinsic layer (106). The FET is an enhancement mode MISFET (100) in which biasing establishes the FET channel in the intrinsic layer (106). The insulating layer (108) has a substantially flat surface supporting a gate contact (116). This avoids or reduces departures from channel straightness caused by intrusion of a gate groove, and enables a high value of current gain cut-off frequency to be obtained. In FETs with layers that are not flat, departures from channel straightness should not be more than 50 nm in extent, preferably less than 5 nm.

摘要翻译： 场效应晶体管（FET）是采用基极偏置来降低对传导的固有贡献并减少漏电流的类型。 它包括四个连续的层（102至108）：一个p + InSb基层（102），一个p + InAlSb阻挡层（104），一个本征层（106）和一个绝缘的SiO 2层（108）; p + +源区和漏区（110,112）被注入本征层（106）中。 FET是其中偏置在本征层（106）中建立FET沟道的增强型MISFET（100）。 绝缘层（108）具有支撑栅极触点（116）的基本平坦的表面。 这避免或减少了由于栅极沟槽侵入而导致的通道平直度的偏离，并且能够获得高的电流增益截止频率值。 在层不平坦的FET中，通道平直度的偏离不应该在50nm以上，优选小于5nm。