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    High molecular weight silicone compounds, resist compositions, and patterning method
    1.
    发明授权
    High molecular weight silicone compounds, resist compositions, and patterning method 有权
    高分子量硅氧烷化合物，抗蚀剂组合物和图案化方法

    公开(公告)号：US06730453B2

    公开(公告)日：2004-05-04

    申请号：US09887320

    申请日：2001-06-25

    申请人： Mutsuo Nakashima ,  Ichiro Kaneko ,  Toshinobu Ishihara ,  Junji Tsuchiya ,  Jun Hatakeyama ,  Shigehiro Nagura

    发明人： Mutsuo Nakashima ,  Ichiro Kaneko ,  Toshinobu Ishihara ,  Junji Tsuchiya ,  Jun Hatakeyama ,  Shigehiro Nagura

    IPC分类号： G03F7075

    CPC分类号： G03F7/0045 ,  C08G77/14 ,  C08G77/38 ,  C08G77/388 ,  C08G77/50 ,  G03F7/0392 ,  G03F7/0757

    摘要： The invention provides a high molecular weight silicone compound comprising recurring units of formula (1) and having a weight average molecular weight of 1,000-50,000. Some or all of the hydrogen atoms of carboxyl groups or carboxyl and hydroxyl groups in the silicone compound may be replaced by acid labile groups. Z is a di- to hexavalent, non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; Z is a di- to hexavalent, normal or branched hydrocarbon group or non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; x, y and z are integers of 1-5 corresponding to the valence of Z and Z′; R1 is —OCHR—R′—OH or —NHCHR—R′—OH; R2 is alkyl or alkenyl or a monovalent, non-aromatic, polycyclic hydrocarbon or bridged cyclic hydrocarbon group; p1, p2, p3 and p4 are 0 or positive numbers. A resist composition comprising the high molecular weight silicone compound as a base resin is sensitive to actinic radiation and has a high sensitivity and resolution so that it is suitable for microfabrication with electron beams or deep UV. Since the composition has low absorption at the exposure wavelength of an ArF or KrF excimer laser, a finely defined pattern having walls perpendicular to the substrate can be readily formed.

    摘要翻译： 本发明提供了包含式（1）的重复单元并且具有1,000-50,000重均分子量的高分子量硅氧烷化合物。 硅氧烷化合物中的羧基或羧基和羟基的一些或全部氢原子可被酸不稳定基团取代.Z为二价至六价，非芳香族，单环或多环烃或桥环状烃基; Z是二价至六价，正或支链烃基或非芳香族单环或多环烃或桥环状烃基; x，y和z是对应于Z和Z'的化合价的1-5的整数; R 1是-OCHR-R'-OH或-NHCHR-R'-OH; R 2是烷基或烯基或单价，非芳族，多环烃或桥连环烃基; p1，p2，p3和p4为0或正数。 包含作为基础树脂的高分子量硅氧烷化合物的抗蚀剂组合物对光化辐射敏感，并且具有高灵敏度和分辨率，使得它适合于用电子束或深紫外线的微细加工。 由于组成在ArF或KrF准分子激光器的曝光波长处具有低吸收，因此可以容易地形成具有垂直于衬底的壁的精细限定图案。

    High molecular weight silicone compounds resist compositions, and patterning method
    2.
    发明授权
    High molecular weight silicone compounds resist compositions, and patterning method 有权
    高分子量硅氧烷化合物抵抗组合物和图案化方法

    公开(公告)号：US06309796B1

    公开(公告)日：2001-10-30

    申请号：US09129950

    申请日：1998-08-06

    申请人： Mutsuo Nakashima ,  Ichiro Kaneko ,  Toshinobu Ishihara ,  Junji Tsuchiya ,  Jun Hatakeyama ,  Shigehiro Nagura

    发明人： Mutsuo Nakashima ,  Ichiro Kaneko ,  Toshinobu Ishihara ,  Junji Tsuchiya ,  Jun Hatakeyama ,  Shigehiro Nagura

    IPC分类号： G03F7075

    CPC分类号： G03F7/0045 ,  C08G77/14 ,  C08G77/38 ,  C08G77/388 ,  C08G77/50 ,  G03F7/0392 ,  G03F7/0757

    摘要： The invention provides a high molecular weight silicone compound comprising recurring units of formula (1) and having a weight average molecular weight of 1,000-50,000. Some or all of the hydrogen atoms of carboxyl groups or carboxyl and hydroxyl groups in the silicone compound may be replaced by acid labile groups. Z is di- to hexavalent, non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; Z′ is a di- to hexavalent, normal or branched hydrocarbon group or non-aromatic, monocyclic or polycyclic hydrocarbon or bridged cyclic hydrocarbon group; x, y and z are integers of 1-5 corresponding to the valence of Z and Z′; R1 is —OCHR—R′ —OH or —NHCHR—R′ —OH; R2 is alkyl or alkenyl or a monovalent, non-aromatic, polycyclic hydrocarbon or bridged cyclic hydrocarbon group; p1, p2, p3 and p4 are 0 or positive numbers. A resist composition comprising the high molecular weight silicone compound as a base resin is sensitive to actinic radiation and has a high sensitivity and resolution so that it is suitable for microfabrication with electron beams or deep UV. Since the composition has low absorption at the exposure wavelength of an ArF or KrF excimer laser, a finely defined pattern having walls perpendicular to the substrate can be readily formed.

    摘要翻译： 本发明提供了包含式（1）的重复单元并且具有1,000-50,000重均分子量的高分子量硅氧烷化合物。 硅烷化合物中的羧基或羧基和羟基的一部分或全部氢原子可被酸不稳定基团取代.Z为二价至六价，非芳香族，单环或多环烃基或桥环状烃基; Z'是二价至六价，正或支链烃基或非芳香族单环或多环烃或桥连环烃基; x，y和z是对应于Z和Z'的化合价的1-5的整数; R 1是-OCHR-R'-OH或-NHCHR-R'-OH; R2是烷基或链烯基或单价，非芳族，多环烃或桥连环烃基; p1，p2，p3和p4为0或正数。 包含作为基础树脂的高分子量硅氧烷化合物的抗蚀剂组合物对光化辐射敏感，并且具有高灵敏度和分辨率，使得它适合于用电子束或深紫外线的微细加工。 由于组成在ArF或KrF准分子激光器的曝光波长处具有低吸收，因此可以容易地形成具有垂直于衬底的壁的精细限定图案。

    Chemically amplified positive resist composition
    5.
    发明授权
    Chemically amplified positive resist composition 失效
    化学放大正光刻胶组合物

    公开(公告)号：US5750309A

    公开(公告)日：1998-05-12

    申请号：US684481

    申请日：1996-07-19

    申请人： Jun Hatakeyama ,  Shigehiro Nagura ,  Kiyoshi Motomi ,  Takeshi Nagata ,  Toshinobu Ishihara

    发明人： Jun Hatakeyama ,  Shigehiro Nagura ,  Kiyoshi Motomi ,  Takeshi Nagata ,  Toshinobu Ishihara

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

    摘要： In a chemical amplification positive resist composition comprising an organic solvent, a resin and a photoacid generator, at least two polymers having different molecular weights selected from polyhydroxystyrenes having some hydroxyl groups protected with acid labile groups are used. Among the polymers, a high molecular weight polymer has a molecular weight dispersity (Mw1/Mn1) of up to 1.5, and a low molecular weight polymer has a dispersity (Mw2/Mn2) of up to 5.0. The weight average molecular weight ratio Mw1/Mw2 is between 1.5/1 and 10.0/1. The resist composition is highly sensitive to actinic radiation, has improved sensitivity and resolution, and is suitable for use in a fine patterning technique and commercially acceptable.

    摘要翻译： 在包含有机溶剂，树脂和光致酸发生剂的化学放大正性抗蚀剂组合物中，使用至少两种具有不同分子量的聚合物，其选自具有用酸不稳定基保护的一些羟基的多羟基苯乙烯。 在聚合物中，高分子量聚合物的分子量分散性（Mw1 / Mn1）高达1.5，低分子量聚合物的分散性（Mw2 / Mn2）高达5.0。 重均分子量Mw1 / Mw2在1.5 / 1和10.0 / 1之间。 抗蚀剂组合物对光化辐射高度敏感，具有改进的灵敏度和分辨率，并且适用于精细图案化技术和商业上可接受的。

    Chemically amplified positive resist composition
    6.
    发明授权
    Chemically amplified positive resist composition 失效
    化学放大正光刻胶组合物

    公开(公告)号：US5849461A

    公开(公告)日：1998-12-15

    申请号：US684395

    申请日：1996-07-19

    申请人： Jun Hatakeyama ,  Shigehiro Nagura ,  Kiyoshi Motomi ,  Takeshi Nagata ,  Toshinobu Ishihara

    发明人： Jun Hatakeyama ,  Shigehiro Nagura ,  Kiyoshi Motomi ,  Takeshi Nagata ,  Toshinobu Ishihara

    IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/038

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： In a chemically amplified positive resist composition comprising an organic solvent, an acid labile group-protected resin and a photoacid generator, a compound having a weight average molecular weight of 100-1,000 and at least two phenolic hydroxyl groups in a molecule wherein the hydrogen atom of the phenolic hydroxyl group is partially replaced by an acid labile group in an overall average proportion of 10-80% is blended as a dissolution controller. The resist composition is highly sensitive to actinic radiation, has improved sensitivity and resolution, and is suitable for use in a fine patterning technique and commercially acceptable.

    摘要翻译： 在包含有机溶剂，酸不稳定基团保护的树脂和光致酸产生剂的化学放大型正性抗蚀剂组合物中，分子中具有重均分子量为100-1,000的化合物和至少两个酚羟基，其中氢原子 的酚羟基被酸不稳定基团部分替代，总平均比例为10-80％混合作为溶解控制剂。 抗蚀剂组合物对光化辐射高度敏感，具有改进的灵敏度和分辨率，并且适用于精细图案化技术和商业上可接受的。

    Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
    8.
    发明授权
    Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效
    聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺

    公开(公告)号：US6048661A

    公开(公告)日：2000-04-11

    申请号：US33147

    申请日：1998-03-02

    申请人： Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111

    摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.

    摘要翻译： 提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案 耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。 这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子 羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。

    Chemically amplified positive resist compositions
    9.
    发明授权
    Chemically amplified positive resist compositions 失效
    化学扩增的正性抗蚀剂组合物

    公开(公告)号：US5985512A

    公开(公告)日：1999-11-16

    申请号：US831750

    申请日：1997-04-01

    申请人： Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106

    摘要： A chemically amplified positive resist composition is prepared by blending (A) an organic solvent, (B) a base resin, and (C) a photoacid generator with a mixture of (1) a nitrogenous organic compound having pKa.gtoreq.7 and a vapor pressure of less than 2 Torr at 100.degree. C. and (2) a nitrogenous organic compound having pKa.gtoreq.7 and a vapor pressure of 2-100 Torr at 100.degree. C. The resist composition has high sensitivity to actinic radiation and high resolution, is developable with aqueous base to form a pattern without a T-top profile by PED and footing on the substrate surface, and is suitable for fine processing.

    摘要翻译： 通过将（A）有机溶剂，（B）基础树脂和（C）光酸产生剂与（1）具有pKa = 7的含氮有机化合物和 在100℃下蒸气压小于2乇，（2）在100℃下pKa> = 7，蒸汽压为2-100乇的含氮有机化合物。抗蚀剂组合物对光化辐射具有高敏感性， 高分辨率，可用水性基底显影，通过PED形成图案，并且在基材表面上形成基底，并适用于精细加工。

    Anti-reflective coating composition
    10.
    发明授权
    Anti-reflective coating composition 失效
    防反射涂料组合物

    公开(公告)号：US5814694A

    公开(公告)日：1998-09-29

    申请号：US833052

    申请日：1997-04-03

    申请人： Satoshi Watanabe ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Satoshi Watanabe ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： C08K5/09

    CPC分类号： C08K5/09

    摘要： A water-soluble coating composition for forming a layer to be placed on the upper surface of a resist is provided without use of Freons. The material includes an aqueous solution containing a) at least one water-soluble polymer selected from the group consisting of poly(N-vinylpyrrolidone) homopolymers and water-soluble copolymers of N-vinylpyrrolidone and other vinyl monomers, b) at least one fluorine-containing organic acid, and c) at least one amino acid derivative. The film formed through use of the material of the invention serves as both an anti-reflective film and a protective film. The material of the present invention provides a number of advantages in the formation of resist patterns, including excellent film-forming properties, excellent dimensional accuracy and aligning accuracy, simple and easy handling, high productivity, and good reproducibility.

    摘要翻译： 在不使用氟利昂的情况下，提供用于形成被放置在抗蚀剂的上表面上的层的水溶性涂料组合物。 该材料包括含有a）至少一种选自聚（N-乙烯基吡咯烷酮）均聚物和N-乙烯基吡咯烷酮和其它乙烯基单体的水溶性共聚物的水溶性聚合物的水溶液，b）至少一种含氟 - 含有机酸，和c）至少一种氨基酸衍生物。 通过使用本发明的材料形成的膜既用作抗反射膜又用作保护膜。 本发明的材料在形成抗蚀剂图形方面提供了许多优点，包括优异的成膜性能，优异的尺寸精度和对准精度，操作简便且易于操作，生产率高，再现性好。