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1.发明授权Variable resistance nonvolatile storage device and method for manufacturing the same 有权可变电阻非易失性存储装置及其制造方法公开(公告)号：US08871561B2
公开(公告)日：2014-10-28
申请号：US13805233
申请日：2012-01-30
申请人： Ichirou Takahashi , Takumi Mikawa
发明人： Ichirou Takahashi , Takumi Mikawa
CPC分类号： H01L45/1683 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1625
摘要： Provided is a method for manufacturing a variable resistance nonvolatile storage device, which prevents electrical conduction between lower electrodes and upper electrodes of variable resistance elements in the memory cell holes. The method includes: forming lower copper lines; forming a third interlayer insulating layer; forming memory cell holes in the third interlayer insulating layer, an opening diameter of upper portions of the memory cell holes being smaller than bottom portions; forming a metal electrode layer on the bottom of each memory cell holes by sputtering; embedding and forming a variable resistance layer in each memory cell hole; and forming upper copper lines connected to the variable resistance layer embedded and formed in each memory cell hole.
摘要翻译： 提供一种制造可变电阻非易失性存储装置的方法，其防止存储单元孔中的下电极和可变电阻元件的上电极之间的导电。 该方法包括：形成较低的铜线; 形成第三层间绝缘层; 在第三层间绝缘层中形成存储单元孔，存储单元孔的上部的开口直径小于底部; 通过溅射在每个存储单元孔的底部形成金属电极层; 在每个存储单元孔中嵌入并形成可变电阻层; 并且形成连接到嵌入并形成在每个存储单元孔中的可变电阻层的上铜线。
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公开(公告)号：US20130140515A1
公开(公告)日：2013-06-06
申请号：US13810840
申请日：2012-02-22
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L27/2418 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/146 , H01L45/1675
摘要： A method of manufacturing a nonvolatile memory element, the method including: forming a first lower electrode layer, a current steering layer, and a first upper electrode layer; forming a second lower electrode layer, a variable resistance layer, and a second upper electrode layer on the first upper electrode layer; patterning the second upper electrode layer, the variable resistance layer, and the lower electrode layer; patterning the first upper electrode layer, the current steering layer, and first lower electrode layer to form a current steering element, using the second lower electrode layer as a mask by use of etching which is performed on the second lower electrode layer at an etching rate lower than at least etching rates at which the second upper electrode layer and the variable resistance layer are etched; and forming a variable resistance element which has an area smaller than the area of the current steering element.
摘要翻译： 一种制造非易失性存储元件的方法，所述方法包括：形成第一下电极层，电流引导层和第一上电极层; 在所述第一上电极层上形成第二下电极层，可变电阻层和第二上电极层; 图案化第二上电极层，可变电阻层和下电极层; 对第一上电极层，电流引导层和第一下电极层进行构图，以形成电流导向元件，使用第二下电极层作为掩模，以蚀刻速率在第二下电极层上进行蚀刻 低于至少蚀刻第二上电极层和可变电阻层的蚀刻速率; 以及形成面积小于当前操舵元件面积的可变电阻元件。
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3.发明申请VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权可变电阻非易失存储器件及其制造方法公开(公告)号：US20130095634A1
公开(公告)日：2013-04-18
申请号：US13805233
申请日：2012-01-30
申请人： Ichirou Takahashi , Takumi Mikawa
发明人： Ichirou Takahashi , Takumi Mikawa
IPC分类号： H01L45/00
CPC分类号： H01L45/1683 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1625
摘要： Provided is a method for manufacturing a variable resistance nonvolatile storage device, which prevents electrical conduction between lower electrodes and upper electrodes of variable resistance elements in the memory cell holes. The method includes: forming lower copper lines; forming a third interlayer insulating layer; forming memory cell holes in the third interlayer insulating layer, an opening diameter of upper portions of the memory cell holes being smaller than bottom portions; forming a metal electrode layer on the bottom of each memory cell holes by sputtering; embedding and forming a variable resistance layer in each memory cell hole; and forming upper copper lines connected to the variable resistance layer embedded and formed in each memory cell hole.
摘要翻译： 提供一种制造可变电阻非易失性存储装置的方法，其防止存储单元孔中的可变电阻元件的下电极和上电极之间的导电。 该方法包括：形成较低的铜线; 形成第三层间绝缘层; 在第三层间绝缘层中形成存储单元孔，存储单元孔的上部的开口直径小于底部; 通过溅射在每个存储单元孔的底部形成金属电极层; 在每个存储单元孔中嵌入并形成可变电阻层; 并且形成连接到嵌入并形成在每个存储单元孔中的可变电阻层的上铜线。
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公开(公告)号：US08927331B2
公开(公告)日：2015-01-06
申请号：US13997818
申请日：2012-03-09
申请人： Ichirou Takahashi , Takumi Mikawa
发明人： Ichirou Takahashi , Takumi Mikawa
CPC分类号： H01L45/1641 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： A method of manufacturing a nonvolatile memory device includes: forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalum oxide material layer, the tantalum oxide material layer to plasma generated from a noble gas.
摘要翻译： 一种制造非易失性存储器件的方法包括：形成包含缺氧过渡金属氧化物的氧化钽材料层; 形成包含过渡金属氧化物并且氧缺乏程度低于氧化钽材料层的缺氧程度的氧化钽材料层; 在氧化钽材料层形成之后，将氧化钽材料层暴露于由稀有气体产生的等离子体。
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公开(公告)号：US20130295745A1
公开(公告)日：2013-11-07
申请号：US13997818
申请日：2012-03-09
申请人： Ichirou Takahashi , Takumi Mikawa
发明人： Ichirou Takahashi , Takumi Mikawa
IPC分类号： H01L45/00
CPC分类号： H01L45/1641 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： A method of manufacturing a nonvolatile memory device includes: forming a tantalum oxide material layer including an oxygen-deficient transition metal oxide; forming a tantalum oxide material layer including a transition metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the tantalum oxide material layer; and exposing, after the forming of a tantalum oxide material layer, the tantalum oxide material layer to plasma generated from a noble gas.
摘要翻译： 一种制造非易失性存储器件的方法包括：形成包含缺氧过渡金属氧化物的氧化钽材料层; 形成包含过渡金属氧化物并且氧缺乏程度低于氧化钽材料层的缺氧程度的氧化钽材料层; 在氧化钽材料层形成之后，将氧化钽材料层暴露于由稀有气体产生的等离子体。
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公开(公告)号：US5281994A
公开(公告)日：1994-01-25
申请号：US782366
申请日：1991-10-24
CPC分类号： H04N1/1056 , G03B27/526 , G03G15/04 , H04N1/1013 , G03G15/0435 , H04N2201/0446 , H04N2201/0448
摘要： Opposite surfaces or sides of a mirror in an optical system are supported in a spring-biased manner at three points in total. This prevents a shift in position of the mirror that otherwise might occur due to shocks during reciprocal movement of the optical system.
摘要翻译： 在光学系统中的反射镜的相对表面或侧面以总共三个点的弹簧偏置方式支撑。 这防止在光学系统的往复运动期间由于冲击而可能发生的反射镜的位置偏移。
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公开(公告)号：USD298331S
公开(公告)日：1988-11-01
申请号：US826050
申请日：1986-02-04
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公开(公告)号：US4569587A
公开(公告)日：1986-02-11
申请号：US589935
申请日：1984-03-14
CPC分类号： B65H1/266 , B65H1/04 , G03G15/6502
摘要： A copying machine paper supply enables various paper supply cassettes having different volumes to be easily accommodated in only one large space. Cassette holding members are formed at opposite sides of the space and receive guide portions formed on opposite sides of each paper supply cassette. The cassette thus is housed in the space and is supported at the opposite sides thereof only.
摘要翻译： 复印机纸供应使得具有不同体积的各种供纸盒容易地容纳在一个大的空间中。 盒体保持构件形成在空间的相对侧并且接收形成在每个供纸盒的相对侧上的引导部分。 因此，盒式磁带容纳在该空间中并且仅在其相对侧被支撑。
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公开(公告)号：US20130112936A1
公开(公告)日：2013-05-09
申请号：US13810708
申请日：2012-01-18
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first transition metal oxide layer, the second electrode has a single needle-shaped part at the interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the needle-shaped part.
摘要翻译： 一种可变电阻元件，包括：第一电极; 第二电极; 以及可变电阻层，其具有根据施加的电信号可逆地改变的电阻值，其中所述可变电阻层包括包含第一氧缺乏过渡金属氧化物的第一可变电阻层和包含第二过渡金属的第二可变电阻层 具有低于第一过渡金属氧化物层的氧缺乏程度的氧缺乏的氧化物，第二电极在与第二可变电阻层的界面处具有单个针状部分，并且插入第二可变电阻层 在第一可变电阻层和第二电极之间，与第一可变电阻层和第二电极接触并覆盖针状部分。
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10.发明授权Apparatus for separating and removing a dangerous substance from an exhaust gas 失效用于从废气中分离和除去危险物质的装置
公开(公告)号：US5551965A
公开(公告)日：1996-09-03
申请号：US271735
申请日：1994-07-07
申请人： Ichirou Takahashi
发明人： Ichirou Takahashi
IPC分类号： B01D53/34 , B01D47/02 , B01D50/00 , B01D53/46 , H01L21/205
CPC分类号： B01D50/006 , B01D47/02
摘要： In order to separate and remove a dangerous substance such as yellow phosphorus from exhaust gas generated in a semiconductor fabricating process by chemical vapor deposition, the exhaust gas is bathed in operating oil of a cooled oil tank of an oil-sealed rotary vacuum pump so that molecules of the yellow phosphorus or the like are caught by the cooled operating oil so as to be enveloped in the operating oil. Thus, a mixture operating oil of the substance and the operating oil is generated in the form of colloid. The mixture operating oil is passed through an oil filter of a filtration device so that the substance such as yellow phosphorus is precipitated by the filter and then the substance is removed. Meanwhile, the operating oil as a filtrate from which the substance has been filtered is cooled by an oil-temperature controller, and then returned to the oil-sealed rotary vacuum pump. Thus, the exhaust gas suctioned into the oil tank of the vacuum pump is ordinarily made contact with the cooled operating oil thereby enhancing the efficiency of separating the substance such as yellow phosphorus.
摘要翻译： 为了通过化学气相沉积在半导体制造过程中产生的废气中分离出一种危险物质，例如黄磷，将废气沐浴在油封旋转真空泵的冷却油箱的工作油中，使得 黄磷等的分子被冷却的工作油捕获，以被包封在工作油中。 因此，以胶体的形式产生物质和工作油的混合工作油。 混合工作油通过过滤装置的滤油器，使得诸如黄磷的物质被过滤器沉淀，然后去除物质。 同时，作为过滤物质的滤液的工作油由油温控制器冷却，然后返回到油封旋转真空泵。 因此，抽吸到真空泵的油箱中的废气通常与冷却的工作油接触，从而提高黄磷等物质的分离效率。
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