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公开(公告)号：US20090162547A1
公开(公告)日：2009-06-25
申请号：US12086520
申请日：2006-12-15
CPC分类号： B05D1/005 , B05C11/06 , B05C11/08 , B05D3/0406 , B05D3/0486 , B05D2203/30 , B05D2203/35 , G03F7/162 , H01L21/67017 , H01L21/67023 , H01L21/6715
摘要： The invention is a coating apparatus including: a substrate-holding part that holds a substrate horizontally; a chemical nozzle that supplies a chemical to a central portion of the substrate horizontally held by the substrate-holding part; a rotation mechanism that causes the substrate-holding part to rotate in order to spread out the chemical on a surface of the substrate by a centrifugal force, for coating the whole surface with the chemical; a gas-flow-forming unit that forms a down flow of an atmospheric gas on the surface of the substrate horizontally held by the substrate-holding part; a gas-discharging unit that discharges an atmosphere around the substrate; and a gas nozzle that supplies a laminar-flow-forming gas to the surface of the substrate, the laminar-flow-forming gas having a coefficient of kinematic viscosity larger than that of the atmospheric gas; wherein the atmospheric gas or the laminar-flow-forming gas are supplied to the central portion of the substrate.
摘要翻译： 本发明是一种涂覆装置，包括：水平保持基板的基板保持部; 化学喷嘴，其向由所述基板保持部水平保持的所述基板的中央部供给化学品; 旋转机构，其使基板保持部旋转以通过离心力在基板的表面上分散化学品，以用化学品涂布整个表面; 气体流动形成单元，其在由所述基板保持部水平保持的所述基板的表面上形成气氛气体的向下流动; 气体排出单元，其排出基板周围的气氛; 以及气体喷嘴，其向所述基板的表面供给层流形成气体，所述层流形成气体的运动粘度系数大于所述气氛气体的系数; 其中所述大气气体或层流形成气体被供应到所述基板的中心部分。
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公开(公告)号：US09421569B2
公开(公告)日：2016-08-23
申请号：US13981124
申请日：2012-01-13
IPC分类号： B05C5/00 , B05C9/14 , H01L21/3205 , B05B7/16 , C23C18/16 , H01L21/288 , B05D1/02 , C25D17/00 , H01L21/67 , G03F7/16
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1614 , C23C18/1619 , C23C18/1676 , C23C18/168 , C25D17/001 , G03F7/162 , H01L21/288 , H01L21/67017
摘要： A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.
摘要翻译： 电镀装置包括：保持/旋转基板的基板保持/旋转装置; 以及将电镀液体供给到基板上的电镀液供给装置。 电镀液供给装置包括：储存电镀液的供给槽; 排出喷嘴，其将所述电镀液体排出到所述基板上; 以及电镀液体供给管路，供给槽的镀液通过该供给线供给到排出喷嘴。 此外，第一加热装置设置在电镀液供给装置的供给罐和电镀液供给管线中的任一个处，并将电镀液加热至第一温度。 此外，在第一加热装置和排出喷嘴之间的电镀液供给管线处设置第二加热装置，并将镀液加热到等于或高于第一温度的第二温度。
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3.发明申请公开(公告)号：US20140302242A1
公开(公告)日：2014-10-09
申请号：US13881431
申请日：2011-08-24
CPC分类号： B05D7/50 , B05B12/04 , B05B12/14 , B05D1/02 , C23C18/1632 , C23C18/1651 , C23C18/31 , C23C18/54 , C25D17/001
摘要： A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.
摘要翻译： 电镀装置1可以通过将电镀液供给到基板2的表面来进行电镀处理。电镀装置1包括：基板旋转保持器，其构造成保持和旋转基板2; 电镀液供给单元29,30，被配置为向基板2的表面供给不同种类的电镀液; 电镀液排出单元31，其被配置为根据电镀液的种类排出从基板2分散的镀液; 以及控制器32，被配置为控制基板旋转保持器25，电镀液供给单元29和30，电镀液排出单元31.在保持基板2并旋转的同时，在基板2的表面上进行电镀处理 依次通过将不同种类的电镀液体供给到基板2的表面上。
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4.发明授权公开(公告)号：US08770138B2
公开(公告)日：2014-07-08
申请号：US13180702
申请日：2011-07-12
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。
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公开(公告)号：US20140148006A1
公开(公告)日：2014-05-29
申请号：US13879175
申请日：2011-08-31
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： H01L21/67 , H01L21/288
CPC分类号： H01L21/6723 , C23C18/1619 , C23C18/1653 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/50 , H01L21/288
摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.
摘要翻译： 在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。 温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。
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6.发明申请SUPPLY APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD 审中-公开供应设备，半导体制造设备和半导体制造方法公开(公告)号：US20100015791A1
公开(公告)日：2010-01-21
申请号：US12405620
申请日：2009-03-17
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： H01L21/3205 , B05C5/00 , B05B7/16
CPC分类号： C25D17/001 , H01L21/288 , H01L21/76849
摘要： A film of uniform thickness can be formed on the entire surface of a substrate. A processing solution supply apparatus includes: a nozzle provided with a supply hole for discharging a plating solution toward a processing surface of a substrate held in a substantially horizontal direction; a temperature controller for accommodating therein the plating solution in an amount necessary for processing a preset number of substrates, for controlling a temperature of the accommodated plating solution up to a preset temperature; a heat insulator disposed between the nozzle and the temperature controller, for maintaining the plating solution, whose temperature has been controlled by the temperature controller, at the preset temperature; and a transporting mechanism for transporting the plating solution, whose temperature has been controlled up to the preset temperature by the temperature controller, toward the supply hole of the nozzle via the heat insulator.
摘要翻译： 可以在基板的整个表面上形成均匀厚度的膜。 一种处理液供给装置，包括：喷嘴，具有用于向保持在大致水平方向的基板的处理面排出电镀液的供给孔; 温度控制器，用于在其中容纳处理预设数量的基板所需的量的电镀液，用于将所容纳的电镀液的温度控制到预设温度; 设置在喷嘴和温度控制器之间的隔热件，用于将温度由温度控制器控制的电镀液保持在预设温度; 以及传送机构，其通过温度控制器将温度被控制到预设温度的电镀液通过隔热件输送到喷嘴的供给孔。
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7.发明授权公开(公告)号：US09731322B2
公开(公告)日：2017-08-15
申请号：US13881431
申请日：2011-08-24
CPC分类号： B05D7/50 , B05B12/04 , B05B12/14 , B05D1/02 , C23C18/1632 , C23C18/1651 , C23C18/31 , C23C18/54 , C25D17/001
摘要： A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.
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公开(公告)号：US20150303103A1
公开(公告)日：2015-10-22
申请号：US14343509
申请日：2012-08-08
申请人： Shoso Shinguhara , Fumihiro Inoue , Hiroshi Miyake , Ryohei Arima , Mitsuaki Iwashita , Takashi Tanaka
发明人： Shoso Shinguhara , Fumihiro Inoue , Hiroshi Miyake , Ryohei Arima , Mitsuaki Iwashita , Takashi Tanaka
IPC分类号： H01L21/768 , C23C18/16
CPC分类号： H01L21/76874 , C23C18/1608 , C23C18/1619 , C23C18/1806 , C23C18/1831 , H01L21/288 , H01L21/76898
摘要： A catalyst adsorption method can sufficiently adsorb a catalyst to a lower portion of a recess formed in a substrate. A substrate 20 in which a recess 22 is formed is prepared. Then, a catalyst 23 formed of nanoparticles coated with a dispersant is adsorbed to a surface of the substrate 20 by bringing the substrate 20 into contact with a catalyst solution 12 containing the catalyst by a catalyst adsorption device 10. At that time, a high frequency vibration is applied to the catalyst solution 12.
摘要翻译： 催化剂吸附方法可以将催化剂充分地吸附到形成在基板中的凹部的下部。 准备形成有凹部22的基板20。 然后，通过使催化剂吸附装置10使基板20与含有催化剂的催化剂溶液12接触，将由分散剂涂布的纳米粒子形成的催化剂23吸附在基板20的表面。此时， 对催化剂溶液12施加振动。
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公开(公告)号：US20140127410A1
公开(公告)日：2014-05-08
申请号：US14129743
申请日：2012-06-20
IPC分类号： C23C18/16
CPC分类号： C23C18/1689 , C23C18/1619 , C23C18/1669 , C23C18/1675 , C23C18/1676
摘要： A liquid displacement is performed by supplying a plating liquid onto a substrate 2 while rotating the substrate 2 at a first rotational speed in a state that a pre-treatment liquid remains on a surface of the substrate 2 (liquid displacement process (block S305)). Then, an initial film is formed on the substrate 2 by stopping the rotation of the substrate 2 or by rotating the substrate 2 at a second rotational speed while continuously supplying the plating liquid onto the substrate 2 (incubation process (block S306)). Thereafter, a plating film is grown by rotating the substrate 2 at a third rotational speed while continuously supplying the plating liquid onto the substrate 2 (plating film growing process (block S307)). Here, the first rotational speed is higher than the third rotational speed, and the third rotational speed is higher than the second rotational speed.
摘要翻译： 通过在基板2的表面保持预处理液体的状态下以第一转速旋转基板2，将电镀液供给到基板2上进行液体位移（液体移位处理（方框S305）） 。 然后，通过停止基板2的旋转或者在连续地将电镀液体供给到基板2上的同时以第二转速旋转基板2，在基板2上形成初始膜（保温处理（方框S306））。 然后，在将电镀液体持续供给到基板2上（电镀膜生长处理（框S307））的同时，以第三转速旋转基板2，生长镀膜。 这里，第一转速高于第三转速，第三转速高于第二转速。
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公开(公告)号：US08206785B2
公开(公告)日：2012-06-26
申请号：US12405597
申请日：2009-03-17
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。
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