公开(公告)号：US20210198154A1

公开(公告)日：2021-07-01

申请号：US17133270

申请日：2020-12-23

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Chuang CHIU ,  Tzu-Yu LIU ,  Tien-Heng HUANG ,  Tzu-Chi CHOU ,  Cheng-Ting LIN

IPC: C04B35/64 ,  C04B35/14 ,  C04B35/628

Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.

公开(公告)号：US20150187573A1

公开(公告)日：2015-07-02

申请号：US14576401

申请日：2014-12-19

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Shan-Haw CHIOU ,  Tzu-Chi CHOU ,  Chiung-Hui HUANG ,  Yu-Tzu HSIEH

IPC: H01L21/02 ,  H01L29/36 ,  H01L29/22

CPC classification number: H01L21/02579 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/22 ,  H01L29/36

Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1−3)Ga(1−b)Zn(1+a+b)O4, wherein 0≦a≦0.1, 0≦b≦0.1, and 0

Abstract translation: 提供了P型金属氧化物半导体材料。 P型金属氧化物半导体材料具有In（1-3）Ga（1-b）Zn（1 + a + b）O4的式，其中0＆nlE; a＆nlE; 0.1,0＆amp; nlE; b＆nlE; 0.1和0 < a + b＆nlE; 0.16。 特别是，P型金属氧化物半导体材料的空穴载流子浓度为1×10 11 cm -3〜5×10 18 cm -3。

公开(公告)号：US20240217884A1

公开(公告)日：2024-07-04

申请号：US18147803

申请日：2022-12-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Sheng-Min YU ,  Ming-Hui CHANG ,  Yu-Ming CHEN ,  Tzu-Chi CHOU ,  Ying-Hsuan LEE

IPC: C04B35/581 ,  C04B35/628 ,  C04B35/645

CPC classification number: C04B35/581 ,  C04B35/62842 ,  C04B35/62884 ,  C04B35/645 ,  C04B2235/3865 ,  C04B2235/402 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6567

Abstract: A core-shell particle includes a core and a shell that is wrapped around the core. The core includes aluminum nitride. The shell includes aluminum and a dopant, and the dopant is yttrium, calcium, magnesium, lanthanum, niobium, titanium, copper, or a combination thereof. The aluminum and the dopant in the shell have a weight ratio of 90:10 to 99.9:0.1. The core-shell particle can be sintered to form a ceramic bulk.

公开(公告)号：US20140091302A1

公开(公告)日：2014-04-03

申请号：US14039188

申请日：2013-09-27

Applicant: Industrial Technology Research Institute

Inventor： Tzu-Chi CHOU ,  Kuo-Chuang CHIU ,  Show-Ju PENG ,  Shan-Haw CHIOU ,  Yu-Tsz SHIE

IPC: H01L29/12

CPC classification number: H01L29/12 ,  C01G9/02 ,  C01G15/006 ,  C01P2002/50 ,  C01P2002/52 ,  C04B35/453 ,  C04B35/624 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/449 ,  H01L29/26 ,  H01L29/7869 ,  H01L33/26

Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1−xGa1−yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0

Abstract translation: 本公开提供了一种p型金属氧化物半导体材料。 p型金属氧化物半导体材料具有下式：In1-xGa1-yMx + yZnO4 + m，其中M是Ca，Mg或Cu，0