公开(公告)号：US09991609B2

公开(公告)日：2018-06-05

申请号：US14941349

申请日：2015-11-13

申请人： Infineon Technologies AG

发明人： Alexander Hoehn ,  Georg Borghoff

IPC分类号： H01R4/00 ,  H05K5/00 ,  H01R4/30 ,  H01R4/34 ,  H01L23/48 ,  H01L21/50 ,  H01L25/07 ,  H01R12/70

CPC分类号： H01R4/301 ,  H01L21/50 ,  H01L23/48 ,  H01L25/072 ,  H01L2224/0603 ,  H01L2224/48139 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2924/00014 ,  H01R4/34 ,  H01R12/7088 ,  H05K5/00 ,  H01L2224/45099

摘要： An electrical connection module system includes a first connection plate with a first connection end and at least one first foot section, a first screw nut, and a dielectric holder. The dielectric holder has a first reception region for receiving the first screw nut. The first connection plate can, when the first screw nut is placed in the first reception region, be pushed onto the dielectric holder and be brought into a first target position such that the first screw nut is arranged between the dielectric holder and the first connection end and is held by the first connection end in the first reception region in such a way that the first screw nut cannot fall out.

公开(公告)号：USD762597S1

公开(公告)日：2016-08-02

申请号：US29516507

申请日：2015-02-03

申请人： Infineon Technologies AG

设计人： Andras Bertalan ,  Georg Borghoff ,  Alexander Hoehn

公开(公告)号：US11699625B2

公开(公告)日：2023-07-11

申请号：US17872436

申请日：2022-07-25

申请人： Infineon Technologies AG

发明人： Alexander Hoehn

IPC分类号： H01L23/00 ,  H01L23/057 ,  H01L21/48 ,  H01L25/07 ,  H01L25/00

CPC分类号： H01L23/057 ,  H01L21/4817 ,  H01L24/48 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/48225

摘要： A power semiconductor module arrangement includes: a housing; first and second electrical contacts within the housing; and a mounting arrangement including a frame or body and first and second terminal elements. The mounting arrangement is inserted in and coupled to the housing. First ends of the first and second terminal elements mechanically and electrically contact the first and second electrical contacts, respectively. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.

公开(公告)号：US10020237B2

公开(公告)日：2018-07-10

申请号：US14925274

申请日：2015-10-28

申请人： Infineon Technologies AG

发明人： Alexander Hoehn ,  Georg Borghoff

IPC分类号： H01L23/02 ,  H01L23/15 ,  H01L23/053 ,  H01L21/48 ,  H01L23/498 ,  H05K5/00

CPC分类号： H01L23/053 ,  H01L21/4817 ,  H01L21/4853 ,  H01L21/4885 ,  H01L21/52 ,  H01L23/08 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/06 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H05K5/0008 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. The power semiconductor module also has an electrically conductive terminal block connected firmly and electrically conductively to the circuit carrier and/or to the semiconductor component. The terminal block has a screw thread that is accessible from an outer side of the module housing. A method for producing such a power semiconductor module is also provided.

公开(公告)号：USD748595S1

公开(公告)日：2016-02-02

申请号：US29516506

申请日：2015-02-03

申请人： Infineon Technologies AG

设计人： Andras Bertalan ,  Georg Borghoff ,  Alexander Hoehn

公开(公告)号：US11282774B2

公开(公告)日：2022-03-22

申请号：US16867074

申请日：2020-05-05

申请人： Infineon Technologies AG

发明人： Alexander Hoehn

IPC分类号： H01L23/48 ,  H01L23/498

摘要： A power semiconductor module arrangement includes a semiconductor substrate arranged in a housing, and a mounting arrangement including a frame or body, and at least one terminal element coupled to the frame or body. The mounting arrangement is inserted in and coupled to the housing. The mounting arrangement has a lower surface which, when the mounting arrangement is inserted in and coupled to the housing, rests on at least one contact surface of the housing. When the mounting arrangement is inserted in and coupled to the housing, the at least one terminal element mechanically and electrically contacts the semiconductor substrate with a first end, and a distance between an upper surface of the semiconductor substrate and the at least one contact surface in a vertical direction equals a length of the first end between the upper surface of the semiconductor substrate and the lower surface of the mounting arrangement.

公开(公告)号：US10008392B2

公开(公告)日：2018-06-26

申请号：US15424995

申请日：2017-02-06

申请人： Infineon Technologies AG

发明人： Alexander Hoehn ,  Georg Borghoff

IPC分类号： H01L21/48 ,  H01L21/52 ,  H01L23/053 ,  H01L23/08 ,  H01L23/373 ,  H01L23/498 ,  H05K5/00

CPC分类号： H01L23/053 ,  H01L21/4817 ,  H01L21/4853 ,  H01L21/4885 ,  H01L21/52 ,  H01L23/08 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/06 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H05K5/0008 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power semiconductor module is produced by: providing an electrically conductive terminal block having a screw thread, a connecting conductor having first and second sections, a module housing, a circuit carrier having a dielectric insulation carrier and an upper metallization layer on an upper side of the insulation carrier, and a semiconductor component; fitting the semiconductor component on the circuit carrier; producing a firm and electrically conductive connection between the terminal block and the connecting conductor at the first section; producing a material-fit and electrically conductive connection between the circuit carrier or the semiconductor component and the connecting conductor at the second section; and arranging the terminal block and the circuit carrier fitted with the semiconductor component on the module housing so the semiconductor component is arranged in the module housing and the screw thread is accessible from an outer side of the module housing.

公开(公告)号：US20170148644A1

公开(公告)日：2017-05-25

申请号：US15424995

申请日：2017-02-06

申请人： Infineon Technologies AG

发明人： Alexander Hoehn ,  Georg Borghoff

IPC分类号： H01L21/48 ,  H01L23/053 ,  H01L23/373 ,  H01L23/498 ,  H01L23/08 ,  H05K5/00 ,  H01L21/52

CPC分类号： H01L23/053 ,  H01L21/4817 ,  H01L21/4853 ,  H01L21/4885 ,  H01L21/52 ,  H01L23/08 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/06 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H05K5/0008 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power semiconductor module is produced by: providing an electrically conductive terminal block having a screw thread, a connecting conductor having first and second sections, a module housing, a circuit carrier having a dielectric insulation carrier and an upper metallization layer on an upper side of the insulation carrier, and a semiconductor component; fitting the semiconductor component on the circuit carrier; producing a firm and electrically conductive connection between the terminal block and the connecting conductor at the first section; producing a material-fit and electrically conductive connection between the circuit carrier or the semiconductor component and the connecting conductor at the second section; and arranging the terminal block and the circuit carrier fitted with the semiconductor component on the module housing so the semiconductor component is arranged in the module housing and the screw thread is accessible from an outer side of the module housing.

公开(公告)号：US20160126154A1

公开(公告)日：2016-05-05

申请号：US14925274

申请日：2015-10-28

申请人： Infineon Technologies AG

发明人： Alexander Hoehn ,  Georg Borghoff

IPC分类号： H01L23/053 ,  H05K5/00 ,  H01L21/52 ,  H01L21/48 ,  H01L23/498 ,  H01L23/08

CPC分类号： H01L23/053 ,  H01L21/4817 ,  H01L21/4853 ,  H01L21/4885 ,  H01L21/52 ,  H01L23/08 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/06 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H05K5/0008 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. The power semiconductor module also has an electrically conductive terminal block connected firmly and electrically conductively to the circuit carrier and/or to the semiconductor component. The terminal block has a screw thread that is accessible from an outer side of the module housing. A method for producing such a power semiconductor module is also provided.

摘要翻译： 功率半导体模块包括模块壳体和电路载体，该电路载体具有施加到介电绝缘载体的上侧上的介电绝缘载体和上金属化层。 半导体元件布置在电路载体上。 功率半导体模块还具有导电端子块，其牢固且导电地连接到电路载体和/或连接到半导体部件。 接线端子具有可从模块外壳的外侧接近的螺纹。 还提供了一种用于制造这种功率半导体模块的方法。

公开(公告)号：US20220359319A1

公开(公告)日：2022-11-10

申请号：US17872436

申请日：2022-07-25

申请人： Infineon Technologies AG

发明人： Alexander Hoehn

IPC分类号： H01L23/057 ,  H01L21/48 ,  H01L23/00 ,  H01L25/07 ,  H01L25/00

摘要： A power semiconductor module arrangement includes: a housing; first and second electrical contacts within the housing; and a mounting arrangement including a frame or body and first and second terminal elements. The mounting arrangement is inserted in and coupled to the housing. First ends of the first and second terminal elements mechanically and electrically contact the first and second electrical contacts, respectively. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.