Ultrasonic welding device
    2.
    发明授权

    公开(公告)号:US12109645B2

    公开(公告)日:2024-10-08

    申请号:US18235428

    申请日:2023-08-18

    CPC classification number: B23K20/106 B23K2101/36 B23K2103/12

    Abstract: A method of welding includes providing first and second joining partners, providing a welding apparatus that includes a sonotrode comprising a structured working surface, arranging the first and second joining partners to contact one another, and forming a welded connection between the first and second joining partners by contacting the first joining partner with the structured working surface and vibrating the sonotrode at an ultrasonic frequency, wherein the structured working surface comprises a plurality of apexes, a plurality of nadirs between immediately adjacent ones of the apexes, and planar sidewalls that extend between the nadirs and the apexes, and wherein for each of the apexes the planar sidewalls on either side of the respective apex extend along first and second planes that intersect one another at an acute angle.

    ULTRASONIC WELDING DEVICE
    4.
    发明公开

    公开(公告)号:US20230390859A1

    公开(公告)日:2023-12-07

    申请号:US18235428

    申请日:2023-08-18

    CPC classification number: B23K20/106 B23K2103/12

    Abstract: A method of welding includes providing first and second joining partners, providing a welding apparatus that includes a sonotrode comprising a structured working surface, arranging the first and second joining partners to contact one another, and forming a welded connection between the first and second joining partners by contacting the first joining partner with the structured working surface and vibrating the sonotrode at an ultrasonic frequency, wherein the structured working surface comprises a plurality of apexes, a plurality of nadirs between immediately adjacent ones of the apexes, and planar sidewalls that extend between the nadirs and the apexes, and wherein for each of the apexes the planar sidewalls on either side of the respective apex extend along first and second planes that intersect one another at an acute angle.

    HIGH DENSITY AND DURABLE SEMICONDUCTOR DEVICE INTERCONNECT

    公开(公告)号:US20230063259A1

    公开(公告)日:2023-03-02

    申请号:US17464113

    申请日:2021-09-01

    Abstract: A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

    ULTRASONIC WELDING DEVICE
    10.
    发明申请

    公开(公告)号:US20220347786A1

    公开(公告)日:2022-11-03

    申请号:US17245182

    申请日:2021-04-30

    Abstract: An ultrasonic welding apparatus includes a sonotrode comprising a structured working surface that comprises a plurality of apexes, a plurality of nadirs between immediately adjacent ones of the apexes, and planar sidewalls that extend between the nadirs and the apexes, and for each of the apexes the planar sidewalls on either side of the respective apex extend along first and second planes that intersect one another at an acute angle.

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