公开(公告)号：US10317338B2

公开(公告)日：2019-06-11

申请号：US15716598

申请日：2017-09-27

Applicant: Infineon Technologies AG

Inventor： Naveen Goud Ganagona ,  Moriz Jelinek ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: G01N21/3563 ,  G01N21/35

Abstract: A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. The method may further include: determining a quantity indicative of the content of the generated polyatomic complexes in the silicon sample, and determining the carbon content in the silicon sample from the determined quantity.

公开(公告)号：US10096677B2

公开(公告)日：2018-10-09

申请号：US15178039

申请日：2016-06-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Naveen Goud Ganagona ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L29/10 ,  H01L29/66 ,  H01L29/167 ,  H01L29/08 ,  H01L21/263 ,  H01L21/324 ,  H01L21/67 ,  H01L21/66 ,  H01L29/32 ,  H01L29/861

Abstract: A method for forming a semiconductor device includes implanting a predefined dose of protons into a semiconductor substrate. Further, the method comprises controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. Further, the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C. and the target temperature is higher than 80° C.

公开(公告)号：US20160372329A1

公开(公告)日：2016-12-22

申请号：US15178039

申请日：2016-06-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Naveen Goud Ganagona ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L29/10 ,  H01L21/66 ,  H01L29/66 ,  H01L29/167

CPC classification number: H01L29/1095 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/3242 ,  H01L21/67248 ,  H01L22/26 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/32 ,  H01L29/6609 ,  H01L29/66333 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/861

Abstract: A method for forming a semiconductor device includes implanting a predefined dose of protons into a semiconductor substrate. Further, the method comprises controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. Further, the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C. and the target temperature is higher than 80° C.

Abstract translation: 一种用于形成半导体器件的方法包括将预定剂量的质子注入到半导体衬底中。 此外，该方法包括在注入预定剂量的质子期间控制半导体衬底的温度，使得半导体衬底的温度在用于植入预定义的植入处理时间的植入物处理时间的70％以上在目标温度范围内 质子剂量。 目标温度范围从较低的目标温度限制到达目标温度上限。 此外，较低的目标温度限制等于目标温度减去30℃，上限温度等于目标温度加30℃，目标温度高于80℃。