公开(公告)号：US20140077066A1

公开(公告)日：2014-03-20

申请号：US14033317

申请日：2013-09-20

Applicant: Infineon Technologies AG

Inventor： Dirk OFFENBERG ,  Henning FEICK ,  Stefano PARASCANDOLA

IPC: H01L27/146

CPC classification number: H01L27/14856 ,  G01S7/4865 ,  G01S7/4914 ,  H01L27/14601 ,  H01L27/14683 ,  H04N5/369

Abstract: Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

Abstract translation: 公开了与成像装置和成像装置的制造有关的实施例。 还公开了与成像器装置的方法相关联的实施例。

公开(公告)号：US20180108692A1

公开(公告)日：2018-04-19

申请号：US15783071

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Robert ROESSLER ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Stefano PARASCANDOLA ,  Jens PRIMA

IPC: H01L27/146 ,  G01S17/08 ,  H01L23/48 ,  H01L31/0232 ,  H01L31/101 ,  H01L31/02

CPC classification number: H01L27/14609 ,  G01S7/4914 ,  G01S17/08 ,  G01S17/36 ,  H01L23/481 ,  H01L27/14636 ,  H01L31/02024 ,  H01L31/02325 ,  H01L31/101

Abstract: An optical sensor device includes a semiconductor substrate comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, wherein the doping region is adjacent to the trench, and wherein the doping region has a doping type different from the read out node, wherein the doping region has a doping concentration so that the doping region remains depleted during operation.

公开(公告)号：US20160049411A1

公开(公告)日：2016-02-18

申请号：US14927608

申请日：2015-10-30

Applicant: Infineon Technologies AG

Inventor： Kerstin KAEMMER ,  Thomas BERTRAMS ,  Henning FEICK ,  Olaf STORBECK ,  Matthias SCHMEIDE

IPC: H01L27/112 ,  H01L29/36 ,  H01L23/525 ,  H01L29/423 ,  H01L29/167

CPC classification number: H01L27/11206 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28211 ,  H01L21/2822 ,  H01L23/5256 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/512 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

公开(公告)号：US20170332029A1

公开(公告)日：2017-11-16

申请号：US15472340

申请日：2017-03-29

Applicant: Infineon Technologies AG

Inventor： Henning FEICK

IPC: H04N5/374 ,  H04N5/378

Abstract: An optical sensor device, which may be a time-of-flight sensor, comprises a pixel array having a plurality of pixels. Moreover, the optical sensor device comprises a read-out node configured to provide photo-generated charge carriers from a first pixel and a second pixel for read-out and a first transfer gate configured to enable a read-out of the first pixel using the read-out node and a second transfer gate to disable a read-out of the second pixel during read-out of the first pixel.

公开(公告)号：US20140145281A1

公开(公告)日：2014-05-29

申请号：US14093172

申请日：2013-11-29

Applicant: Infineon Technologies AG

Inventor： Thomas BEVER ,  Henning FEICK ,  Dirk OFFENBERG ,  Stefano PARASCANDOLA ,  Ines UHLIG ,  Thoralf KAUTZSCH ,  Dirk MEINHOLD ,  Hanno MELZNER

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

Abstract translation: 描述和描绘与光电荷载体的控制相关的实施例。 至少一个实施例提供了包括光转换区域以将光转换成光生电荷载流子的半导体衬底; 用于积累光生电荷载流子的区域; 控制电极结构，其包括多个控制电极，以产生电位分布，使得所述光生载流子基于施加到所述控制电极结构的信号而被引导到所述区域以累积所述光生电荷载流子; 在半导体衬底中的不均匀掺杂分布，以在光转换区域的至少一部分中产生具有垂直场矢量分量的电场

公开(公告)号：US20200158841A1

公开(公告)日：2020-05-21

申请号：US16747084

申请日：2020-01-20

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano PARASCANDOLA ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Jens PRIMA ,  Robert ROESSLER ,  Michael SOMMER

IPC: G01S7/4914 ,  H04N13/257 ,  G01S17/36 ,  H01L27/146 ,  G01S7/4915

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.

公开(公告)号：US20170018557A1

公开(公告)日：2017-01-19

申请号：US15278076

申请日：2016-09-28

Applicant: Infineon Technologies AG

Inventor： Kerstin KAEMMER ,  Thomas BERTRAMS ,  Henning FEICK ,  Olaf STORBECK ,  Matthias SCHMEIDE

IPC: H01L27/112 ,  H01L21/265 ,  H01L21/28 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L27/11206 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28211 ,  H01L21/2822 ,  H01L23/5256 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/512 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Abstract translation: 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。

公开(公告)号：US20180106892A1

公开(公告)日：2018-04-19

申请号：US15783062

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano PARASCANDOLA ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Jens PRIMA ,  Robert ROESSLER ,  Michael SOMMER

IPC: G01S7/491 ,  G01S17/36 ,  H01L27/146 ,  H04N13/02

CPC classification number: G01S7/4914 ,  G01S7/4915 ,  G01S17/36 ,  H01L27/14603 ,  H04N13/257

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate with a conversion region configured to convert at least a portion of the electromagnetic signal into photo-generated charge carriers. A deep control electrode is formed in a trench extending into the semiconductor substrate. The deep control electrode extends deeper into the semiconductor substrate than a shallow control electrode. A control circuit is configured to apply to the deep control electrode and to the shallow control electrode varying potentials having a fixed phase relationship to each other, to generate electric potential distributions in the conversion region, by which the photo-generated charge carriers in the conversion region are directed. The directed photo-generated charge carriers are detected at at least one readout node.

公开(公告)号：US20170332024A1

公开(公告)日：2017-11-16

申请号：US15472367

申请日：2017-03-29

Applicant: Infineon Technologies AG

Inventor： Henning FEICK

IPC: H04N5/363 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/363 ,  H01L27/14614 ,  H01L27/14616 ,  H04N5/378

Abstract: An optical sensor device comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers is shown. The optical sensor device comprises a read-out node configured to read-out the photo-generated charge carriers and a control electrode which is separated by an isolating material from the conversion region. Furthermore, the optical sensor device comprises a doping region in the semiconductor substrate between the control electrode and the conversion region, wherein the doping region comprises a higher doping concentration compared to a minimum doping concentration of the conversion region, wherein the doping concentration is at least 1000 times higher than the minimum doping concentration of the conversion region and wherein the doping region extends into the semiconductor substrate. Moreover, a projection of the control electrode towards the conversion region overlaps the doping region or is located in the doping region. Embodiments show the optical sensor device as a time-of-flight sensor.