公开(公告)号：US20160155714A1

公开(公告)日：2016-06-02

申请号：US14555736

申请日：2014-11-28

Applicant: Infineon Technologies AG

Inventor： Jochen HILSENBECK ,  Jens Peter KONRATH ,  Thomas FRANK ,  Roland RUPP

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L24/05 ,  H01L23/3121 ,  H01L23/585 ,  H01L24/03 ,  H01L24/06 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/4238 ,  H01L29/43 ,  H01L29/7392 ,  H01L29/7396 ,  H01L29/74 ,  H01L29/7802 ,  H01L29/8083 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05558 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/06181 ,  H01L2224/45124 ,  H01L2924/01014 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/0105 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/143 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1435 ,  H01L2924/1436 ,  H01L2924/1461 ,  H01L2924/3512

Abstract: According to various embodiments, a semiconductor device may include: a layer stack formed at a surface of the semiconductor device, the layer stack including: a metallization layer including a first metal or metal alloy; a protection layer covering the metallization layer, the protection layer including a second metal or metal alloy, wherein the second metal or metal alloy is less noble than the first metal or metal alloy.

Abstract translation: 根据各种实施例，半导体器件可以包括：形成在半导体器件的表面处的层堆叠，所述层堆叠包括：包括第一金属或金属合金的金属化层; 覆盖金属化层的保护层，保护层包括第二金属或金属合金，其中第二金属或金属合金比第一金属或金属合金低。