Thin film transistor substrate and display panel using the same

    公开(公告)号:US10304958B2

    公开(公告)日:2019-05-28

    申请号:US15168261

    申请日:2016-05-31

    Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a first protective layer, and a second protective layer. The gate electrode is disposed on a substrate. The metal oxide semiconductor layer is disposed on a gate insulating layer and electrically connects the source electrode and the drain electrode. The first protective layer disposed on the metal oxide semiconductor layer has a first oxygen vacancy concentration. The second protective layer disposed on the first protective layer has a second oxygen vacancy concentration. A boundary area located between the first and second protective layers has a third oxygen vacancy concentration. The third oxygen vacancy concentration is respectively greater than the first oxygen vacancy concentration and the second oxygen vacancy concentration.

    DISPLAY APPARATUS AND FABRICATING METHOD FOR DISPLAY APPARATUS

    公开(公告)号:US20180012930A1

    公开(公告)日:2018-01-11

    申请号:US15629766

    申请日:2017-06-22

    Abstract: A display apparatus and a fabricating method for a display apparatus are provided. The fabricating method for the display apparatus includes the following steps. An array substrate having a first electrode and a second electrode is provided. A first light emitting diode is heated to soften a first bump between the first electrode and the first light emitting diode, the first light emitting diode is bonded onto the first electrode by the first bump. The first light emitting diode and a second light emitting diode are heated to soften the first bump and a second bump between the second electrode and the second light emitting diode, the second light emitting diode is bonded onto the second electrode by the second bump, and the first light emitting diode and the second light emitting diode are pressed.

    Display panel
    3.
    发明授权
    Display panel 有权
    显示面板

    公开(公告)号:US09595537B2

    公开(公告)日:2017-03-14

    申请号:US14958049

    申请日:2015-12-03

    Abstract: A display panel is provided, which includes a first substrate, a first insulating layer on the first substrate, a semiconductor layer on the first insulating layer, and a second insulating layer on the semiconductor layer and the first insulating layer. The second insulating layer has a surface in the vicinity of the first insulating layer. The second insulating layer has a first region. The first region is 40 nm in depth starting from the surface of the second insulating layer, and the second insulating layer has a fluoride ion gain ratio of 80% to 95% in the first region.

    Abstract translation: 提供一种显示面板,其包括第一基板,第一基板上的第一绝缘层,第一绝缘层上的半导体层,以及半导体层和第一绝缘层上的第二绝缘层。 第二绝缘层在第一绝缘层附近具有表面。 第二绝缘层具有第一区域。 第一区域从第二绝缘层的表面开始深度为40nm,第二绝缘层的第一区域的氟离子增益比为80%〜95%。

    Fabricating method for display apparatus

    公开(公告)号:US10748959B2

    公开(公告)日:2020-08-18

    申请号:US16558322

    申请日:2019-09-03

    Abstract: A fabricating method for a display apparatus is provided. The fabricating method for the display apparatus includes the following steps. An array substrate having a first electrode and a second electrode is provided. A first light emitting diode is heated to soften a first bump between the first electrode and the first light emitting diode, the first light emitting diode is bonded onto the first electrode by the first bump. The first light emitting diode and a second light emitting diode are heated to soften the first bump and a second bump between the second electrode and the second light emitting diode, the second light emitting diode is bonded onto the second electrode by the second bump, and the first light emitting diode and the second light emitting diode are pressed.

    FABRICATING METHOD FOR DISPLAY APPARATUS
    5.
    发明申请

    公开(公告)号:US20200006420A1

    公开(公告)日:2020-01-02

    申请号:US16558322

    申请日:2019-09-03

    Abstract: A fabricating method for a display apparatus is provided. The fabricating method for the display apparatus includes the following steps. An array substrate having a first electrode and a second electrode is provided. A first light emitting diode is heated to soften a first bump between the first electrode and the first light emitting diode, the first light emitting diode is bonded onto the first electrode by the first bump. The first light emitting diode and a second light emitting diode are heated to soften the first bump and a second bump between the second electrode and the second light emitting diode, the second light emitting diode is bonded onto the second electrode by the second bump, and the first light emitting diode and the second light emitting diode are pressed.

    Display panel
    6.
    发明授权

    公开(公告)号:US09841637B2

    公开(公告)日:2017-12-12

    申请号:US14742564

    申请日:2015-06-17

    CPC classification number: G02F1/13394 G02B5/201 G02F1/133512 G02F1/133707

    Abstract: A display panel is provided. The display panel includes a color filter substrate. The color filter substrate includes a first substrate, a black matrix, a color filter layer, a transparent conductive layer, and a plurality of spacers. The black matrix and the color filter layer are disposed on the first substrate. The transparent conductive layer is disposed on the color filter layer and the black matrix, and has a plurality of openings located above the black matrix. The spacers are located on the transparent conductive layer and located on the black matrix. At least one of the openings is located between the adjacent spacers, and at least one of the spacers partially overlaps at least one of the openings.

    Display device
    8.
    发明授权

    公开(公告)号:US09666727B2

    公开(公告)日:2017-05-30

    申请号:US15067557

    申请日:2016-03-11

    Abstract: A display device is provided. A thin film transistor structure of the display device includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate and the gate electrode, a channel layer on the gate insulation layer and corresponding to the gate electrode, and a source electrode and a drain electrode contacting two sides of the channel layer, respectively, and extending onto the gate insulation layer. The channel layer includes a first metal oxide semiconductor layer, which includes (1) tin and (2) at least one of gallium, hafnium, and aluminum.

    Display apparatus and fabricating method for display apparatus

    公开(公告)号:US10446604B2

    公开(公告)日:2019-10-15

    申请号:US15629766

    申请日:2017-06-22

    Abstract: A display apparatus and a fabricating method for a display apparatus are provided. The fabricating method for the display apparatus includes the following steps. An array substrate having a first electrode and a second electrode is provided. A first light emitting diode is heated to soften a first bump between the first electrode and the first light emitting diode, the first light emitting diode is bonded onto the first electrode by the first bump. The first light emitting diode and a second light emitting diode are heated to soften the first bump and a second bump between the second electrode and the second light emitting diode, the second light emitting diode is bonded onto the second electrode by the second bump, and the first light emitting diode and the second light emitting diode are pressed.

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