公开(公告)号：US20230178534A1

公开(公告)日：2023-06-08

申请号：US17989682

申请日：2022-11-18

申请人： Innolux Corporation

发明人： Jia-Sin Lin ,  Wen-Chi Fang ,  Jen-Hai Chi ,  Zhi-Fu Huang ,  Pei-Chi Chen ,  Wan-Chun Tsai

IPC分类号： H01L25/18 ,  H01L29/786 ,  H01L29/93 ,  H01L25/00

CPC分类号： H01L25/18 ,  H01L29/78678 ,  H01L29/78669 ,  H01L29/7869 ,  H01L29/93 ,  H01L25/50

摘要： This disclosure provides a communication device and a manufacturing method thereof. The manufacturing method of the communication device includes the following steps: providing a first dielectric layer, wherein the first dielectric layer includes a first region and a second region, and the first dielectric layer has a first surface and a second surface opposite to the first surface; providing a second dielectric layer; combining the first dielectric layer and the second dielectric layer with a sealing element, so that the sealing element is disposed between the first surface of the first dielectric layer and a third surface of the second dielectric layer; after combining the first dielectric layer and the second dielectric layer, thinning the second surface of the first dielectric layer; and disposing a first communication element on the first surface of the first dielectric layer in the first region.

公开(公告)号：US11217884B2

公开(公告)日：2022-01-04

申请号：US16904646

申请日：2020-06-18

申请人： InnoLux Corporation

发明人： Hang-Lang Lee ,  I-Yin Li ,  Tang-Chin Hung ,  Pei-Chi Chen

IPC分类号： H01Q1/38 ,  H03C7/02

摘要： A radiation device includes: a first substrate; a second substrate; a dielectric layer disposed between the first substrate and the second substrate; and a film layer structure disposed on the first substrate. The resistivity of the film layer structure is between 108 and 5×1014 Ω-cm. Therefore, frequency modulation range of radiation signals of the radiation device can be increased.

公开(公告)号：US20230171896A1

公开(公告)日：2023-06-01

申请号：US17976866

申请日：2022-10-30

申请人： Innolux Corporation

发明人： Pei-Chi Chen ,  Wen-Chi Fang ,  Jen-Hai Chi ,  Zhi-Fu Huang ,  Jia-Sin Lin ,  Wan-Chun Tsai

IPC分类号： H05K3/00 ,  H05K3/30

CPC分类号： H05K3/0044 ,  H05K3/30 ,  H05K2203/0228 ,  H05K2203/0264 ,  H05K2203/025 ,  H05K2201/10106 ,  H05K2201/10174

摘要： A manufacturing method of an electronic device including following steps is provided. A first substrate is provided. A thermal release adhesive layer is provided on the first substrate. A thinning process is performed on the first substrate to form a first thinned substrate. A cutting process is performed on the first thinned substrate to form a first sub-substrate. The thermal release adhesive layer is separated from the first thinned substrate or the first sub-substrate. In the manufacturing method of the electronic device provided in one or more embodiments of the disclosure, the manufacturing process of the electronic device may be simplified, and/or defects of the resultant electronic device may be reduced.