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公开(公告)号:US20230305057A1
公开(公告)日:2023-09-28
申请号:US17701323
申请日:2022-03-22
Applicant: Intel Corporation
Inventor: Xianghong Tong , Martin Von Haartman , Zhiyong Ma , Jennifer J. Huening , Hyuk Ju Ryu , Christopher Morgan , Shuai Zhao , Ramune Nagisetty , Tuyen K. Tran , Wen-Hsien Chuang
IPC: G01R31/307 , G01R1/073
CPC classification number: G01R31/307 , G01R1/07342
Abstract: Wafer level electron beam prober systems, devices, and techniques, are described herein related to providing wafer level testing for fabricated device structures. Such wafer level testing contacts a first side of a die of a wafer with a probe to provide test signals to the die under test and performs e-beam imaging of the first side of the die while the test signals are provided to the die under test.
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公开(公告)号:US20240006302A1
公开(公告)日:2024-01-04
申请号:US17856777
申请日:2022-07-01
Applicant: Intel Corporation
Inventor: Richard H. Livengood , Muhammad Usman Raza , Waqas Ali , Tahir Malik , Shida Tan , Martin Von Haartman , Mauro Kobrinsky , Amir Raveh , Clifford J. Engle
IPC: H01L23/50 , H01L23/528 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/786
CPC classification number: H01L23/50 , H01L23/5286 , H01L29/0673 , H01L29/0873 , H01L29/42392 , H01L29/78696
Abstract: Techniques and structures are disclosed related to coupling to gate-all-around transistors for test and/or debug of an integrated circuit. The gate-all-around transistors, which may also be referred to as 3D stacked transistors or ribbon-FET transistors are contacted directly from the back side or they are contacted using a dedicated probe point on the back side of the gate-all-around transistors. Such contact may be made to probe the devices and/or to provide edit wires to modify the integrated circuit.
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公开(公告)号:US20230317408A1
公开(公告)日:2023-10-05
申请号:US17711785
申请日:2022-04-01
Applicant: Intel Corporation
Inventor: Xianghong Tong , Martin Von Haartman , Wen-Hsien Chuang , Zhiyong Ma , Hyuk Ju Ryu , Prasoon Joshi , May Ling Oh , Jennifer Huening , Shuai Zhao , Charles Peterson , Ira Jewell , Hasan Faraby
IPC: H01J37/26 , H01J37/28 , H01J37/244
CPC classification number: H01J37/265 , H01J37/28 , H01J37/244 , H01J2237/2443 , H01J2237/2814 , H01J2237/2801 , H01J2237/221
Abstract: Pulsed beam prober systems, devices, and techniques are described herein related to providing a beam detection frequency that is less than a electrical test frequency. An electrical test signal at the electrical test frequency is provided to die under test. A pulsed beam is applied to the die such that the pulsed beam has packets of beam pulses or a frequency delta with respect to the electrical test frequency. The packets of beam pulses or the frequency delta elicits a detectable beam modulation in an imaging signal reflected from the die such that the imaging signal is modulated at a detection frequency less than the electrical test frequency.
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