公开(公告)号：US09812422B2

公开(公告)日：2017-11-07

申请号：US15273549

申请日：2016-09-22

Applicant: Intel Corporation

Inventor： Toong Erh Ooi ,  Bok Eng Cheah ,  Nitesh Nimkar

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/498 ,  H01L25/10 ,  H01L25/00 ,  H01L23/538 ,  H01L23/50 ,  H01L21/48 ,  H05K3/46 ,  H05K1/18

CPC classification number: H01L24/82 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/498 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/73 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82005 ,  H01L2224/82039 ,  H01L2224/821 ,  H01L2224/82345 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1076 ,  H01L2924/12042 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H05K1/185 ,  H05K3/4682 ,  H05K2201/10674 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An apparatus including a die; and a build-up carrier including alternating layers of conductive material and dielectric material disposed on a device side of the die and dielectric material embedding a portion of a thickness dimension of the die; and a plurality of carrier contact points disposed at a gradation between the device side of the die and the embedded thickness dimension of the die and configured for connecting the carrier to a substrate. A method including disposing a die on a sacrificial substrate with a device side of the die opposite the sacrificial substrate; forming a build-up carrier adjacent a device side of a die, wherein the build-up carrier includes a dielectric material defining a gradation between the device side of the die and a backside of the die, the gradation including a plurality of carrier contact points; and separating the die and the carrier from the sacrificial substrate.

公开(公告)号：US20170012020A1

公开(公告)日：2017-01-12

申请号：US15273549

申请日：2016-09-22

Applicant: Intel Corporation

Inventor： Toong Erh Ooi ,  Bok Eng Cheah ,  Nitesh Nimkar

IPC: H01L23/00 ,  H01L21/48

CPC classification number: H01L24/82 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/498 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/73 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82005 ,  H01L2224/82039 ,  H01L2224/821 ,  H01L2224/82345 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1076 ,  H01L2924/12042 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H05K1/185 ,  H05K3/4682 ,  H05K2201/10674 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An apparatus including a die; and a build-up carrier including alternating layers of conductive material and dielectric material disposed on a device side of the die and dielectric material embedding a portion of a thickness dimension of the die; and a plurality of carrier contact points disposed at a gradation between the device side of the die and the embedded thickness dimension of the die and configured for connecting the carrier to a substrate. A method including disposing a die on a sacrificial substrate with a device side of the die opposite the sacrificial substrate; forming a build-up carrier adjacent a device side of a die, wherein the build-up carrier includes a dielectric material defining a gradation between the device side of the die and a backside of the die, the gradation including a plurality of carrier contact points; and separating the die and the carrier from the sacrificial substrate.

Abstract translation: 一种包括模具的设备; 以及堆叠载体，其包括设置在所述管芯的器件侧上的交替的导电材料层和介电材料层，以及包埋所述管芯的厚度尺寸的一部分的电介质材料; 以及多个载体接触点，其设置在所述管芯的器件侧和所述管芯的嵌入的厚度尺寸之间的灰度处，并且被配置为将所述载体连接到衬底。 一种方法，包括在牺牲衬底上设置管芯，其中模具的器件侧与牺牲衬底相对; 在模具的器件侧附近形成堆积载体，其中所述积聚载体包括在所述管芯的器件侧和所述管芯的背面之间限定灰度的介电材料，所述等级包括多个载体接触点 ; 以及将所述管芯和所述载体与所述牺牲衬底分离。