-
公开(公告)号：US20220090265A1
公开(公告)日：2022-03-24
申请号：US17024870
申请日：2020-09-18
摘要： Embodiments are disclosed for a method for generating a metal-oxide film. The method includes providing a metal ligand complex having a metal and a reactive moiety. The metal ligand complex is dissolved in a solvent that coats at least part of a substrate. Additionally, the method includes inducing a combustion process involving the metal ligand complex, in the absence of any additional fuel, to generate a film that is formed over at least part of the substrate. The film includes an oxide of the metal.
-
公开(公告)号：US12110592B2
公开(公告)日：2024-10-08
申请号：US17024870
申请日：2020-09-18
CPC分类号： C23C18/1216 , C09D1/00 , C09D7/20
摘要： Embodiments are disclosed for a method for generating a metal-oxide film. The method includes providing a metal ligand complex having a metal and a reactive moiety. The metal ligand complex is dissolved in a solvent that coats at least part of a substrate. Additionally, the method includes inducing a combustion process involving the metal ligand complex, in the absence of any additional fuel, to generate a film that is formed over at least part of the substrate. The film includes an oxide of the metal.
-
3.发明申请Sulfonamide-Containing Topcoat and Photoresist Additive Compositions and Methods of Use 有权含磺酰胺的面漆和光致抗蚀剂添加剂组合物和使用方法公开(公告)号：US20160053129A1
公开(公告)日：2016-02-25
申请号：US14933851
申请日：2015-11-05
IPC分类号： C09D133/16
CPC分类号： C09D133/16 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： Provided are sulfonamide-containing compositions, topcoat polymers, and additive polymers for use in lithographic processes that have improved static receding water contact angles over those known in the art. The sulfonamide-containing topcoat polymers and additive polymers of the present invention include sulfonamide-substituted repeat units with branched linking group as shown in Formula (I):
摘要翻译： 提供了与本领域已知的相比，具有改进的静态后退水接触角的用于光刻工艺的含磺酰胺的组合物，面漆聚合物和添加剂聚合物。 本发明的含磺酰胺的面漆聚合物和添加剂聚合物包括具有支链连接基团的磺酰胺取代的重复单元，如式（I）所示：
-
公开(公告)号：US20210304852A1
公开(公告)日：2021-09-30
申请号：US16835958
申请日：2020-03-31
发明人： Petar Ristoski , Dmitry Zubarev , Linda Ha Kato , Anna Lisa Gentile , Nathaniel H. Park , Daniel Gruhl , Steven R. Welch , Daniel Paul Sanders , James L. Hedrick , Chandrasekhar Narayan , Chad Eric DeLuca , Alfredo Alba
摘要： Candidate material for polymerization can be received. One or more desired features in the candidate material can be identified. A machine learning model can be trained to generate a new material having one or more of the desired features. Permissively, the candidate material can be determined from running a machine learning classification model that ranks a plurality of material as candidates. Permissively, the generated new material can be input to the machine learning classification model, for the machine learning classification model to include in ranking the plurality of material as candidates.
-
公开(公告)号：US11022882B2
公开(公告)日：2021-06-01
申请号：US16013728
申请日：2018-06-20
发明人： Seiichiro Tachibana , Takeru Watanabe , Keisuke Niida , Hiroko Nagai , Takashi Sawamura , Tsutomu Ogihara , Alexander Edward Hess , Gregory Breyta , Daniel Paul Sanders , Rudy J. Wojtecki
IPC分类号： G03F7/025 , C07C13/54 , C07C43/23 , G03F7/039 , C08K5/00 , C08L49/00 , H01L21/027 , H01L21/308
摘要： A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.
-
公开(公告)号：US10755928B2
公开(公告)日：2020-08-25
申请号：US16258347
申请日：2019-01-25
发明人： Chi-Chun Liu , Kristin Schmidt , Yann Mignot , Martha Inez Sanchez , Daniel Paul Sanders , Nelson Felix , Ekmini Anuja De Silva
IPC分类号： H01L21/033 , H01L21/02 , H01L21/311 , H01L21/3105
摘要： A plurality of mandrels and silicon dioxide spacer structures are formed, with the spacer structures interdigitated between the mandrels. An organic planarization layer is applied, as are a thin oxide layer and a layer of photoresist patterned in hole tone over the oxide layer, thereby defining a domain. At least one hole is etched in the thin oxide layer and the organic planarization layer to expose a portion of a hard mask layer surface between the spacer structures. A selective polymer brush is applied, which grafts only to the exposed hard mask surface, followed by solvent rinsing the domain to remove ungrafted polymer brush. At least one precursor is infused to an etch resistant material into the polymer brush by a sequential infiltration synthesis process. The organic planarization layer is ashed to convert the infused precursor into oxide form to further enhance etch selectivity to the hard mask layer.
-
7.发明申请公开(公告)号：US20200243335A1
公开(公告)日：2020-07-30
申请号：US16258347
申请日：2019-01-25
发明人： Chi-Chun Liu , Kristin Schmidt , Yann Mignot , Martha Inez Sanchez , Daniel Paul Sanders , Nelson Felix , Ekmini Anuja De Silva
IPC分类号： H01L21/033 , H01L21/311 , H01L21/3105 , H01L21/02
摘要： A plurality of mandrels and silicon dioxide spacer structures are formed, with the spacer structures interdigitated between the mandrels. An organic planarization layer is applied, as are a thin oxide layer and a layer of photoresist patterned in hole tone over the oxide layer, thereby defining a domain. At least one hole is etched in the thin oxide layer and the organic planarization layer to expose a portion of a hard mask layer surface between the spacer structures. A selective polymer brush is applied, which grafts only to the exposed hard mask surface, followed by solvent rinsing the domain to remove ungrafted polymer brush. At least one precursor is infused to an etch resistant material into the polymer brush by a sequential infiltration synthesis process. The organic planarization layer is ashed to convert the infused precursor into oxide form to further enhance etch selectivity to the hard mask layer.
-
8.发明授权公开(公告)号：US10604618B2
公开(公告)日：2020-03-31
申请号：US16013672
申请日：2018-06-20
发明人： Seiichiro Tachibana , Takeru Watanabe , Keisuke Niida , Hiroko Nagai , Takashi Sawamura , Tsutomu Ogihara , Alexander Edward Hess , Gregory Breyta , Daniel Paul Sanders , Rudy J. Wojtecki
摘要： A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.
-
公开(公告)号：US20210303762A1
公开(公告)日：2021-09-30
申请号：US16835892
申请日：2020-03-31
发明人： Petar Ristoski , Dmitry Zubarev , Linda Ha Kato , Anna Lisa Gentile , Nathaniel H. Park , Daniel Gruhl , Steven R. Welch , Daniel Paul Sanders , James L. Hedrick , Chandrasekhar Narayan , Chad Eric DeLuca , Alfredo Alba
摘要： A set of material candidates expected to yield materials with target properties can be generated. A subject matter expert's decision indicating accepted and rejected material candidates from the set of material candidates can be received. Based on the subject matter expert's input, a machine learning model can be trained to replicate the subject matter expert's decision.
-
公开(公告)号：US09422445B2
公开(公告)日：2016-08-23
申请号：US14933851
申请日：2015-11-05
CPC分类号： C09D133/16 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： Provided are sulfonamide-containing compositions, topcoat polymers, and additive polymers for use in lithographic processes that have improved static receding water contact angles over those known in the art. The sulfonamide-containing topcoat polymers and additive polymers of the present invention include sulfonamide-substituted repeat units with branched linking group as shown in Formula (I):
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.017 秒)
