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公开(公告)号：US20220101148A1
公开(公告)日：2022-03-31
申请号：US17031898
申请日：2020-09-25
发明人： June-Ray Lin , Qin Qiong Zhang , Wu Song Fang , Jie Yang , Yu Li , Li Juan Long
摘要： Some embodiments of the present invention are directed towards techniques for building and using machine learning enhanced trees for automated solution determination in a technical support context. Historical technical support records with associated problems, actions and results are received and clustered. A solution determination tree is constructed from the clustered actions, and a machine learning model is trained to predict which action will lead to a solution based on an accumulated data set including a problem and subsequent results from previous actions. Using the solution determination tree and the machine learning model, classes of actions are recommended based on accumulated data for an incoming support request/problem or a result resulting from a executing a previously recommended action.
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公开(公告)号：US10608100B2
公开(公告)日：2020-03-31
申请号：US16055510
申请日：2018-08-06
发明人： Kangguo Cheng , Peng Xu , Jie Yang
IPC分类号： H01L29/66 , H01L21/3213 , H01L21/308 , H01L21/311 , H01L29/78 , H01L29/165
摘要： A semiconductor device includes gate structures formed transversely over semiconductor fins on a substrate. The gate material includes a gate conductor and a dielectric cap on the gate conductor. The device further includes unipolar spacers formed over the gate structures only. The semiconductor fins are free from the unipolar spacers, and the unipolar spacers have a substantially uniform thickness vertically along the gate structures and include a spacer material with an etch selectivity greater than SiN for oxide removal.
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公开(公告)号：US10573566B2
公开(公告)日：2020-02-25
申请号：US16148433
申请日：2018-10-01
发明人： Zhenxing Bi , Kangguo Cheng , Peng Xu , Jie Yang
IPC分类号： H01L29/10 , H01L21/8238 , H01L27/092 , H01L29/165 , H01L21/8234 , H01L27/108 , H01L27/088 , H01L29/66 , H01L29/417 , H01L29/78
摘要： A method of forming complementary vertical fins and vertical fins with uniform heights, including, forming a trench in a region of a substrate, wherein the trench extends through an upper portion of the substrate and a buried punch-through stop layer, and extends into a lower portion of the substrate, forming a reformed punch-through stop layer in a bottom portion of the trench, forming a fin formation region on the reformed punch-through stop layer, and forming a complementary vertical fin from the fin formation region and a vertical fin from the upper portion of the substrate on a first region of the substrate adjacent to the second region.
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公开(公告)号：US20180240714A1
公开(公告)日：2018-08-23
申请号：US15811821
申请日：2017-11-14
发明人： Zhenxing Bi , Kangguo Cheng , Peng Xu , Jie Yang
IPC分类号： H01L21/8238 , H01L29/66 , H01L29/78 , H01L29/36 , H01L21/306 , H01L27/092 , H01L21/308
摘要： A method of making a semiconductor device including forming a first blanket layer on a substrate; forming a second blanket layer on the first blanket layer; patterning a first fin of a first transistor region and a second fin of a second transistor region in the first blanket layer and the second blanket layer; depositing a mask on the second transistor region; removing the first fin to form a trench; growing a first semiconductor layer in the trench where the first fin was removed; and growing a second semiconductor layer on the first semiconductor layer.
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公开(公告)号：US20180240713A1
公开(公告)日：2018-08-23
申请号：US15435627
申请日：2017-02-17
发明人： Zhenxing Bi , Kangguo Cheng , Peng Xu , Jie Yang
IPC分类号： H01L21/8238 , H01L27/092 , H01L21/306 , H01L21/308 , H01L29/36 , H01L29/78 , H01L29/66
摘要： A method of making a semiconductor device including forming a first blanket layer on a substrate; forming a second blanket layer on the first blanket layer; patterning a first fin of a first transistor region and a second fin of a second transistor region in the first blanket layer and the second blanket layer; depositing a mask on the second transistor region; removing the first fin to form a trench; growing a first semiconductor layer in the trench where the first fin was removed; and growing a second semiconductor layer on the first semiconductor layer.
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公开(公告)号：US20180082909A1
公开(公告)日：2018-03-22
申请号：US15816037
申请日：2017-11-17
发明人： Praneet Adusumilli , Zuoguang Liu , Shogo Mochizuki , Jie Yang , Chun W. Yeung
IPC分类号： H01L21/8238 , H01L29/417 , H01L29/78 , H01L29/66 , H01L21/762 , H01L23/535 , H01L21/768
CPC分类号： H01L21/823878 , H01L21/76224 , H01L21/76895 , H01L21/823814 , H01L21/823821 , H01L21/845 , H01L23/535 , H01L29/41791 , H01L29/66553
摘要： A method for forming a semiconductor device includes forming a fins on a substrate, forming a sacrificial gate stack over a channel region of the fins, a source/drain region with a first material on the fins, a first cap layer with a second material over the source/drain region, and a second cap layer with a third material on the first cap layer. A dielectric layer is deposited over the second cap layer. The sacrificial gate stack is removed to expose a channel region of the fins. A gate stack is formed over the channel region of the fins. A portion of the dielectric layer is removed to expose the second cap layer. The second cap layer and the first cap layer are removed to expose the source/drain region. A conductive material is deposited on the source/drain region.
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公开(公告)号：US20180026114A1
公开(公告)日：2018-01-25
申请号：US15611122
申请日：2017-06-01
发明人： Kangguo Cheng , Peng Xu , Jie Yang
IPC分类号： H01L29/66 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L29/78
CPC分类号： H01L29/6656 , H01L21/308 , H01L21/31111 , H01L21/32139 , H01L29/6653 , H01L29/66795
摘要： A method for forming a spacer for a semiconductor device includes patterning gate material in a transverse orientation relative to semiconductor fins formed on a substrate and conformally depositing a dummy spacer layer over surfaces of gate structures and the fins. A dielectric fill formed over the gate structures and the fins is planarized to remove a portion of the dummy spacer layer formed on tops of the gate structures and expose the dummy spacer layer at tops of the sidewalls of the gate structures. Channels are formed by removing the dummy spacer layer along the sidewalls of the gate structures. The fins are protected by the dielectric fill. A spacer is formed by filling the channels with a spacer material. The dielectric fill and the dummy spacer layer are removed to expose the fins. Source and drain regions are formed between the gate structures on the fins.
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公开(公告)号：US09837407B1
公开(公告)日：2017-12-05
申请号：US15257232
申请日：2016-09-06
发明人： Kangguo Cheng , Chi-chun Liu , Peng Xu , Jie Yang
IPC分类号： H01L27/088 , H01L29/06 , H01L21/8234
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823481 , H01L29/0676 , H01L29/41791 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785 , H01L2924/0645 , H01L2924/13067
摘要： A semiconductor device includes a semiconductor fin arranged on a substrate, a gate stack arranged over a channel region of the fin, and a spacer arranged adjacent to the gate stack. A source/drain region is arranged in the fin the source/drain region having a cavity that exposes a portion of the semiconductor fin. An insulator layer is arranged over a portion of the fin, and a conductive contact material is arranged in the cavity and over portions of the source/drain region.
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公开(公告)号：US20140130057A1
公开(公告)日：2014-05-08
申请号：US14153779
申请日：2014-01-13
发明人： Zhi Wen Fu , Zi Ming Hu , Peng Lui , Jie Yang
IPC分类号： G06F9/50
CPC分类号： G06F9/50 , G06F9/5044 , G06F9/505 , G06F9/5077 , H04L67/1002
摘要： There is provided a method and system for scheduling a job in a cluster, the cluster comprises multiple computing nodes, and the method comprises: defining rules for constructing virtual sub-clusters of the multiple computing nodes; constructing the multiple nodes in the cluster into multiple virtual sub-clusters based on the rules, wherein one computing node can only be included in one virtual sub-cluster; dispatching a received job to a selected virtual sub-cluster; and scheduling at least one computing node for the dispatched job in the selected virtual sub-cluster. Further, the job is dispatched to the selected virtual sub-cluster based on characteristics of the job and/or characteristics of virtual sub-clusters.
摘要翻译： 提供了一种用于调度集群中的作业的方法和系统，所述集群包括多个计算节点，并且所述方法包括：定义用于构建所述多个计算节点的虚拟子集群的规则; 基于规则将簇中的多个节点构建成多个虚拟子集群，其中一个计算节点只能包含在一个虚拟子集群中; 将所接收的作业调度到所选择的虚拟子集群; 以及为所选择的虚拟子集群中的所分配的作业调度至少一个计算节点。 此外，基于作业的特性和/或虚拟子集的特征将作业调度到所选择的虚拟子集群。
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公开(公告)号：US10546788B2
公开(公告)日：2020-01-28
申请号：US15811821
申请日：2017-11-14
发明人： Zhenxing Bi , Kangguo Cheng , Peng Xu , Jie Yang
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/78 , H01L29/66 , H01L21/762 , H01L21/8234 , H01L21/308 , H01L21/265 , H01L21/223 , H01L21/22 , H01L21/02 , H01L21/225 , H01L21/20 , H01L21/306 , H01L21/8254 , H01L21/8256 , H01L21/82 , H01L21/8252 , H01L29/161 , H01L21/228
摘要： A method of making a semiconductor device including forming a first blanket layer on a substrate; forming a second blanket layer on the first blanket layer; patterning a first fin of a first transistor region and a second fin of a second transistor region in the first blanket layer and the second blanket layer; depositing a mask on the second transistor region; removing the first fin to form a trench; growing a first semiconductor layer in the trench where the first fin was removed; and growing a second semiconductor layer on the first semiconductor layer.
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