利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.035 秒)

    Amorphous carbon electrode and a secondary battery having such an electrode
    3.
    发明授权
    Amorphous carbon electrode and a secondary battery having such an electrode 失效
    无定形碳电极和具有这种电极的二次电池

    公开(公告)号：US5773167A

    公开(公告)日：1998-06-30

    申请号：US657269

    申请日：1996-06-03

    申请人： Naoki Iwasaki ,  Takeharu Inoue ,  Isamu Sakuma ,  Naoki Shimoyama ,  Jun Tsukamoto ,  Keizo Ono

    发明人： Naoki Iwasaki ,  Takeharu Inoue ,  Isamu Sakuma ,  Naoki Shimoyama ,  Jun Tsukamoto ,  Keizo Ono

    IPC分类号： H01M4/58 ,  H01M4/587 ,  H01M10/0525 ,  H01M10/36

    CPC分类号： H01M4/587 ,  H01M10/0525

    摘要： An amorphous carbon material, especially for an electrode of a lithium ion secondary battery, is characterized by an interlayer spacing d(002), obtained from the X-ray diffraction line assigned to the (002) plane of the carbon, of 0.345 nm to 0.365 nm, a ratio (Ps) os the number of carbon atoms involved in the layer structure to the total number of carbon atoms of from 0.54 to 0.85, and a ratio of the total nitrogen:total carbon atoms in the amorphous carbon of 0.005:1 to 0.055:1. The amorphous carbon material is prepared by applying a heat treatment to an amorphous carbon under under vacuum or inert gas atmosphere for at least 30 minutes to provide the desired crystalline structure. The carbon material may take the form of carbon fiber material, especially short carbon fibers obtained by pulverizing larger carbon fibers. A lithium ion secondary battery containing an electrode comprising such an amorphous carbon material has a large discharge capacity and high charge-discharge cycle characteristics.

    摘要翻译： 特别是锂离子二次电池用电极的无定形碳材料的特征在于，将从分配给（002）面的X射线衍射线得到的层间距d（002）为0.345nm〜 0.363nm，层结构中涉及的碳原子数与碳原子总数的比例（Ps）为0.54〜0.85，无定形碳中的总氮：总碳原子数的比例为0.005： 1至0.055：1。 通过在真空或惰性气体气氛下对非晶碳进行热处理至少30分钟制备无定形碳材料，以提供所需的晶体结构。 碳材料可以采取碳纤维材料的形式，特别是通过粉碎较大的碳纤维获得的短碳纤维。 包含这种无定形碳材料的电极的锂离子二次电池具有大的放电容量和高的充放电循环特性。

    Semiconductor laser
    4.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4321556A

    公开(公告)日：1982-03-23

    申请号：US113161

    申请日：1980-01-18

    申请人： Isamu Sakuma

    发明人： Isamu Sakuma

    IPC分类号： H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2232 ,  H01S5/2234 ,  H01S5/2237

    摘要： A semiconductor laser is provided with a semiconductor substrate having a longitudinal groove formed therein. A first cladding layer is formed on the substrate by an epitaxial process which partially fills in the groove. A waveguide layer is provided atop the first cladding layer, the waveguide layer having either a plano-convex or concave-convex configuration and being thicker at its central region than at its outward edges. An active layer and a second cladding layer are laid over the waveguide layer, whereby the first and second cladding layers serve to confine the laser light within the waveguide layer.

    摘要翻译： 半导体激光器设置有在其中形成有纵向槽的半导体衬底。 通过部分填充在凹槽中的外延工艺在衬底上形成第一覆层。 波导层设置在第一包覆层顶部，波导层具有平凸或凹凸形状，并且在其中心区域比在其外边缘处更厚。 在波导层上铺设有源层和第二覆层，由此第一和第二覆层用于将激光限制在波导层内。

    Plasma display and method for manufacturing the same
    5.
    发明授权
    Plasma display and method for manufacturing the same 有权
    等离子显示器及其制造方法

    公开(公告)号：US06184621B2

    公开(公告)日：2001-02-06

    申请号：US09297143

    申请日：1999-04-26

    申请人： Ken Horiuchi ,  Yuichiro Iguchi ,  Takaki Masaki ,  Go Moriya ,  Yukichi Deguchi ,  Kiwame Arizumi ,  Yoshiyuki Kitamura ,  Yoshinori Tani ,  Isamu Sakuma

    发明人： Ken Horiuchi ,  Yuichiro Iguchi ,  Takaki Masaki ,  Go Moriya ,  Yukichi Deguchi ,  Kiwame Arizumi ,  Yoshiyuki Kitamura ,  Yoshinori Tani ,  Isamu Sakuma

    IPC分类号： H01J1100

    CPC分类号： H01J9/242 ,  H01J11/12 ,  H01J11/36 ,  H01J2211/363

    摘要： The plasma display of the present invention is a plasma display in which a dielectric layer and stripe-shaped barrier ribs are formed on a substrate, and it is characterized in that there are inclined regions at the lengthwise direction ends of said barrier ribs and, furthermore, the height (Y) of the inclined regions and the length (X) of the base of the inclined regions are within the range 0.5≦X/Y≦100. Moreover, the method of the present invention for manufacturing a plasma display is characterized in that the aforesaid stripe-shaped barrier ribs are formed via a process in which a pattern of stripe-shaped barrier ribs having inclined regions at the ends is formed on a substrate using a barrier rib paste comprising inorganic material and organic component, and a process in which said barrier rib pattern is fired.

    摘要翻译： 本发明的等离子体显示器是在基板上形成电介质层和条状隔壁的等离子体显示器，其特征在于，在所述隔壁的纵向端部存在倾斜区域，此外 ，倾斜区域的高度（Y）和倾斜区域的基底的长度（X）在0.5 <= X / Y <100的范围内。 此外，用于制造等离子体显示器的本发明的方法的特征在于，上述条形阻挡肋是通过在基板上形成有在端部具有倾斜区域的条状隔壁的图案的方法形成的 使用包含无机材料和有机组分的隔壁糊料以及其中所述隔壁图案被烧制的工艺。

    Buried-type semiconductor laser
    6.
    发明授权
    Buried-type semiconductor laser 失效
    埋式半导体激光器

    公开(公告)号：US4644551A

    公开(公告)日：1987-02-17

    申请号：US661477

    申请日：1984-10-16

    申请人： Hidoe Kawano ,  Isamu Sakuma

    发明人： Hidoe Kawano ,  Isamu Sakuma

    IPC分类号： H01S5/00 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/227 ,  H01S5/2275 ,  H01S5/32308

    摘要： A buried layer semiconductor laser includes a mesa stripe comprised of a multi-layer structure having successively over a substrate at least a first semiconductor cladding layer of a first conductivity type, a semiconductor optical waveguide layer of said first conductivity type, a semiconductor active layer, a second semiconductor cladding layer of a second conductivity type, and a third semiconductor cladding layer of the second conductivity type. The sides of the semiconductor optical waveguide layer are covered by a first semiconductor burying layer of the second conductivity type and having a refractive index the same as or smaller than the refractive index of the optical waveguide layer. A second semiconductor burying layer of the first conductivity type covers the sides of the active layer, the second cladding layer and the third cladding layer. The lateral width of the active layer and the second cladding layer are smaller than the lateral widths of the other layers of the multi-layer structure. In addition, the thickness of the third cladding layer is made substantially greater than the thickness of the second cladding layer while the specific resistivity and thermal resistance of the third cladding layer is made less than that of the second cladding layer. A method for fabricating such a buried layer semiconductor laser is also disclosed.

    摘要翻译： 掩埋层半导体激光器包括由具有第一导电类型的至少第一半导体包层，第一导电类型的半导体光波导层，半导体有源层，半导体有源层， 第二导电类型的第二半导体包覆层和第二导电类型的第三半导体包覆层。 半导体光波导层的侧面被第二导电类型的第一半导体掩埋层覆盖，并且具有与光波导层的折射率相同或更小的折射率。 第一导电类型的第二半导体掩埋层覆盖有源层，第二覆层和第三覆层的侧面。 有源层和第二覆层的横向宽度小于多层结构的其它层的横向宽度。 此外，第三包层的厚度比第二包覆层的厚度大得多，而第三包层的比电阻率和热阻小于第二覆层的厚度。 还公开了一种用于制造这种掩埋层半导体激光器的方法。