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1.发明授权Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface 有权用于在工件表面上的材料的电化学沉积和平坦化的方法和装置公开(公告)号：US06802955B2
公开(公告)日：2004-10-12
申请号：US10044514
申请日：2002-01-11
IPC分类号： B23H300
CPC分类号： C25D17/14 , B23H5/08 , C25D7/123 , C25D17/001 , C25F7/00 , H01L21/2885 , H01L21/32125
摘要： An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.
摘要翻译： 提供了一种电化学装置，其将材料沉积在工件表面上或从工件表面去除材料。 该设备包括抛光垫和压板，该压板又由与抛光垫接触并与第一电位接触的第一导电层，耦合到第二电位的第二导电层以及设置在第二电位之间的第一绝缘层 第一和第二导电层。 至少一个电触点位于抛光垫内并电耦合到第二导电层。 提供一个储存器，其将电解质溶液与抛光垫和工件接触。 载体定位和/或将工件压靠在抛光垫上。
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2.发明授权Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface 有权用于在工件表面上的材料的电化学沉积和平坦化的方法和装置公开(公告)号：US07297239B2
公开(公告)日：2007-11-20
申请号：US10921666
申请日：2004-08-18
CPC分类号： C25D17/14 , B23H5/08 , C25D7/123 , C25D17/001 , C25F7/00 , H01L21/2885 , H01L21/32125
摘要： An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.
摘要翻译： 提供了一种电化学装置，其将材料沉积在工件表面上或从工件表面去除材料。 该设备包括抛光垫和压板，该压板又包括与抛光垫接触并与第一电位接触的第一导电层，耦合到第二电位的第二导电层和设置在第二电位之间的第一绝缘层 第一和第二导电层。 至少一个电触点位于抛光垫内并电耦合到第二导电层。 提供一个储存器，其将电解质溶液与抛光垫和工件接触。 载体定位和/或将工件压靠在抛光垫上。
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公开(公告)号：US20100101448A1
公开(公告)日：2010-04-29
申请号：US12257950
申请日：2008-10-24
IPC分类号： C11D7/60
CPC分类号： C09G1/02
摘要： A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 Å reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days.
摘要翻译： 用于晶片的化学机械平面化处理的浆料包括化学部分和机械部分。 该化学部分包括在晶片的金属层上形成一层以减少凹陷至小于平均值的表面活性剂，降低金属层的静态蚀刻速率。 机械部分包括研磨剂，以帮助平坦化晶片的金属层。 在另一个实施例中，公开了一种用于抛光在第一层上形成的铜层的浆料。 浆料包含研磨剂; 和包含至少一种非离子表面活性剂的表面活性剂以降低铜层的静态蚀刻速率。 浆料的保存期限超过90天。
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4.发明申请公开(公告)号：US20090061630A1
公开(公告)日：2009-03-05
申请号：US12195840
申请日：2008-08-21
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02
摘要： A method using an associated composition for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) is described. This method affords low dishing and local erosion levels on the metal during CMP processing of the metal-containing substrate.
摘要翻译： 描述了使用用于含金属的衬底（例如，铜衬底）的化学机械平坦化的相关组合物的方法。 该方法在含金属衬底的CMP处理期间在金属上提供低的凹陷和局部侵蚀水平。
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公开(公告)号：US06924253B2
公开(公告)日：2005-08-02
申请号：US09829110
申请日：2001-04-09
申请人： Bentley J. Palmer , Diankui Fu , Roger Card , Matthew J. Miller
发明人： Bentley J. Palmer , Diankui Fu , Roger Card , Matthew J. Miller
CPC分类号： C23G5/02 , C09K8/528 , C09K8/536 , Y10S507/927
摘要： A method for treating a wellbore (or well casing) and the contiguous wellbore area to remove scale (mineral deposits comprised of, e.g., BaSO4, CaCO3, etc.) in the context of hydrocarbon recovery and other applications is disclosed, said method including contacting the scale with a fluid comprised of an ionic liquid or liquids.
摘要翻译： 公开了一种用于在烃回收和其它应用的情况下处理井眼（或井套管）和邻近井眼区域以去除垢的方法（例如由BaSO 4，CaCO 3等组成的矿物沉积物），所述方法包括接触 具有由离子液体或液体组成的流体的水垢。
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公开(公告)号：US07678605B2
公开(公告)日：2010-03-16
申请号：US12190882
申请日：2008-08-13
IPC分类号： H01L21/00
CPC分类号： C09G1/02
摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.
摘要翻译： 描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。 组合物和方法在CMP处理期间在含硫属化物的衬底上提供低缺陷水平以及低的凹陷和局部侵蚀水平。
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7.发明授权Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process 失效使用超临界二氧化碳过程从半导体中去除CMP和CMP后残留物公开(公告)号：US07064070B2
公开(公告)日：2006-06-20
申请号：US10396612
申请日：2003-03-24
IPC分类号： H01L21/302
CPC分类号： B08B3/12 , B08B7/0021 , C11D11/0047 , H01L21/02074 , H01L21/02101
摘要： A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.
摘要翻译： 公开了一种用于从物体表面去除CMP残留物的后化学机械抛光（CMP）清洁方法。 物体被放置在压力室内。 压力室被加压。 执行超临界二氧化碳过程以从物体的表面去除残留的CMP残余物。 压力室通风。
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公开(公告)号：US06608005B2
公开(公告)日：2003-08-19
申请号：US09829268
申请日：2001-04-09
申请人： Bentley J. Palmer , Diankui Fu , Roger Card , Edgar Volpert
发明人： Bentley J. Palmer , Diankui Fu , Roger Card , Edgar Volpert
IPC分类号： C09K300
CPC分类号： C09K8/34 , C09K8/32 , Y10S507/925
摘要： Non-aqueous base wellbore fluids characterized by enhanced electrical conductivity due to formulation with specified ionic liquids are disclosed. Drilling, completion, and workover methods utilizing the wellbore fluids are also disclosed.
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公开(公告)号：US6085844A
公开(公告)日：2000-07-11
申请号：US196278
申请日：1998-11-19
CPC分类号： E21B37/00
摘要： An improved method for cleanout of subterranean wells, such as hydrocarbon wells, is disclosed, the method being characterized by utilization of specified translocating fibers and/or platelets to aid in reduction of undesired fluids in the wellbore.
摘要翻译： 公开了一种用于清除地下井如烃井的改进方法，该方法的特征在于利用指定的易位纤维和/或血小板来帮助减少井眼中不需要的流体。
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10.发明申请METHOD AND COMPOSITION FOR CHEMICAL MECHANICAL PLANARIZATION OF A METAL OR A METAL ALLOY 有权金属或金属合金的化学机械平面化方法与组成公开(公告)号：US20130102153A1
公开(公告)日：2013-04-25
申请号：US13561398
申请日：2012-07-30
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low dishing and erosion levels during CMP processing.
摘要翻译： 本文描述了一种用于含金属衬底（例如铜衬底）的化学机械平面化的组合物和相关方法，其在CMP加工期间提供高的和可调的金属去除速率以及低的凹陷和侵蚀水平。
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