公开(公告)号：US09240561B2

公开(公告)日：2016-01-19

申请号：US14381868

申请日：2013-02-27

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka Majima ,  Toshiharu Teranishi ,  Kazuhiko Matsumoto ,  Kenzo Maehashi ,  Yasuo Azuma ,  Yasuhide Ohno ,  Kosuke Maeda ,  Guillaume Hackenberger

IPC: H01L51/05 ,  H01L27/088 ,  H01L27/06 ,  B82Y10/00 ,  H01L27/04 ,  H01L29/66 ,  H01L21/822 ,  H01L49/00 ,  H01L51/10

CPC classification number: H01L51/0512 ,  B82Y10/00 ,  H01L21/8221 ,  H01L27/04 ,  H01L27/0611 ,  H01L27/0688 ,  H01L27/088 ,  H01L29/66477 ,  H01L29/7613 ,  H01L49/006 ,  H01L51/102 ,  H01L2251/10

Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.

Abstract translation: 本发明提供一种与诸如二极管，隧道器件和MOS晶体管的电子器件组合的纳米器件，集成电路和纳米器件的制造方法。 纳米器件包括：第一绝缘层2; 一个电极5A和另一个电极5B设置成在第一绝缘层2上具有纳米隙; 设置在一个电极5A和另一个电极5B之间的金属纳米颗粒或功能分子; 设置在第一绝缘层2上的第二绝缘层8，以及一个电极5A和另一个电极5B，以嵌入金属纳米颗粒或功能分子。 第二绝缘层用作钝化层。

公开(公告)号：US20150014624A1

公开(公告)日：2015-01-15

申请号：US14381868

申请日：2013-02-27

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka Majima ,  Toshiharu Teranishi ,  Kazuhiko Matsumoto ,  Kenzo Maehashi ,  Yasuo Azuma ,  Yasuhide Ohno ,  Kosuke Maeda ,  Guillaume Hackenberger

IPC: H01L51/05 ,  H01L29/66 ,  H01L27/04

CPC classification number: H01L51/0512 ,  B82Y10/00 ,  H01L21/8221 ,  H01L27/04 ,  H01L27/0611 ,  H01L27/0688 ,  H01L27/088 ,  H01L29/66477 ,  H01L29/7613 ,  H01L49/006 ,  H01L51/102 ,  H01L2251/10

Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.

Abstract translation: 本发明提供一种与诸如二极管，隧道器件和MOS晶体管的电子器件组合的纳米器件，集成电路和纳米器件的制造方法。 纳米器件包括：第一绝缘层2; 一个电极5A和另一个电极5B设置成在第一绝缘层2上具有纳米隙; 设置在一个电极5A和另一个电极5B之间的金属纳米颗粒或功能分子; 设置在第一绝缘层2上的第二绝缘层8，以及一个电极5A和另一个电极5B，以嵌入金属纳米颗粒或功能分子。 第二绝缘层用作钝化层。