公开(公告)号：US20160027908A1

公开(公告)日：2016-01-28

申请号：US14773581

申请日：2014-03-09

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka Majima ,  Toshiharu Teranishi ,  Kazuhiko Matsumoto ,  Kenzo Maehashi ,  Tomofumi Susaki ,  Yasuhide Ohno ,  Kosuke Matsuzaki ,  Guillaume Hubert Frederic Hackenberger

IPC: H01L29/76 ,  H01L29/06

CPC classification number: H01L29/7613 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/41725 ,  H01L29/4232 ,  H01L29/66439

Abstract: Provided is a logical operation element that performs logical operations on three or more inputs using a single unique device. The logical operation element 30 is provided with an electrode 5A and the other electrode 5B that are provided to have a nanogap, a metal nanoparticle 7 arranged between the electrode 5A and the other electrode 5B in insulated state, and a plurality of gate electrodes 5C, 5D, 11, 11A, 11B for adjusting a charge of the metal nanoparticle 7. Electric current that flows between the electrode 5A and the other electrode 5B is controlled in accordance with the voltage applied to three or more of the gate electrodes 5C, 5D, 11, 11A, 11B.

Abstract translation: 提供了使用单个唯一设备对三个或更多个输入执行逻辑运算的逻辑运算元件。 逻辑运算元件30设置有电极5A和设置成具有纳米隙的另一电极5B，绝缘状态下布置在电极5A和另一电极5B之间的金属纳米颗粒7，以及多个栅极电极5C， 用于调整金属纳米颗粒7的电荷的电流5A，11A，11A，11B。根据施加到三个或更多个栅极电极5C，5D的电压来控制在电极5A和另一个电极5B之间流动的电流， 11,11A，11B。

公开(公告)号：US20150014624A1

公开(公告)日：2015-01-15

申请号：US14381868

申请日：2013-02-27

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka Majima ,  Toshiharu Teranishi ,  Kazuhiko Matsumoto ,  Kenzo Maehashi ,  Yasuo Azuma ,  Yasuhide Ohno ,  Kosuke Maeda ,  Guillaume Hackenberger

IPC: H01L51/05 ,  H01L29/66 ,  H01L27/04

CPC classification number: H01L51/0512 ,  B82Y10/00 ,  H01L21/8221 ,  H01L27/04 ,  H01L27/0611 ,  H01L27/0688 ,  H01L27/088 ,  H01L29/66477 ,  H01L29/7613 ,  H01L49/006 ,  H01L51/102 ,  H01L2251/10

Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.

Abstract translation: 本发明提供一种与诸如二极管，隧道器件和MOS晶体管的电子器件组合的纳米器件，集成电路和纳米器件的制造方法。 纳米器件包括：第一绝缘层2; 一个电极5A和另一个电极5B设置成在第一绝缘层2上具有纳米隙; 设置在一个电极5A和另一个电极5B之间的金属纳米颗粒或功能分子; 设置在第一绝缘层2上的第二绝缘层8，以及一个电极5A和另一个电极5B，以嵌入金属纳米颗粒或功能分子。 第二绝缘层用作钝化层。

公开(公告)号：US09825161B2

公开(公告)日：2017-11-21

申请号：US14773581

申请日：2014-03-09

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka Majima ,  Toshiharu Teranishi ,  Kazuhiko Matsumoto ,  Kenzo Maehashi ,  Tomofumi Susaki ,  Yasuhide Ohno ,  Kosuke Matsuzaki ,  Guillaume Hubert Frederic Hackenberger

IPC: H01L29/76 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/12 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7613 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/41725 ,  H01L29/4232 ,  H01L29/66439

Abstract: Provided is a logical operation element that performs logical operations on three or more inputs using a single unique device. The logical operation element 30 is provided with an electrode 5A and the other electrode 5B that are provided to have a nanogap, a metal nanoparticle 7 arranged between the electrode 5A and the other electrode 5B in insulated state, and a plurality of gate electrodes 5C, 5D, 11, 11A, 11B for adjusting a charge of the metal nanoparticle 7. Electric current that flows between the electrode 5A and the other electrode 5B is controlled in accordance with the voltage applied to three or more of the gate electrodes 5C, 5D, 11, 11A, 11B.

公开(公告)号：US09240561B2

公开(公告)日：2016-01-19

申请号：US14381868

申请日：2013-02-27

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka Majima ,  Toshiharu Teranishi ,  Kazuhiko Matsumoto ,  Kenzo Maehashi ,  Yasuo Azuma ,  Yasuhide Ohno ,  Kosuke Maeda ,  Guillaume Hackenberger

IPC: H01L51/05 ,  H01L27/088 ,  H01L27/06 ,  B82Y10/00 ,  H01L27/04 ,  H01L29/66 ,  H01L21/822 ,  H01L49/00 ,  H01L51/10

CPC classification number: H01L51/0512 ,  B82Y10/00 ,  H01L21/8221 ,  H01L27/04 ,  H01L27/0611 ,  H01L27/0688 ,  H01L27/088 ,  H01L29/66477 ,  H01L29/7613 ,  H01L49/006 ,  H01L51/102 ,  H01L2251/10

Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.

Abstract translation: 本发明提供一种与诸如二极管，隧道器件和MOS晶体管的电子器件组合的纳米器件，集成电路和纳米器件的制造方法。 纳米器件包括：第一绝缘层2; 一个电极5A和另一个电极5B设置成在第一绝缘层2上具有纳米隙; 设置在一个电极5A和另一个电极5B之间的金属纳米颗粒或功能分子; 设置在第一绝缘层2上的第二绝缘层8，以及一个电极5A和另一个电极5B，以嵌入金属纳米颗粒或功能分子。 第二绝缘层用作钝化层。