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公开(公告)号：US20150014624A1
公开(公告)日：2015-01-15
申请号：US14381868
申请日：2013-02-27
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
Inventor： Yutaka Majima , Toshiharu Teranishi , Kazuhiko Matsumoto , Kenzo Maehashi , Yasuo Azuma , Yasuhide Ohno , Kosuke Maeda , Guillaume Hackenberger
CPC classification number: H01L51/0512 , B82Y10/00 , H01L21/8221 , H01L27/04 , H01L27/0611 , H01L27/0688 , H01L27/088 , H01L29/66477 , H01L29/7613 , H01L49/006 , H01L51/102 , H01L2251/10
Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.
Abstract translation: 本发明提供一种与诸如二极管，隧道器件和MOS晶体管的电子器件组合的纳米器件，集成电路和纳米器件的制造方法。 纳米器件包括：第一绝缘层2; 一个电极5A和另一个电极5B设置成在第一绝缘层2上具有纳米隙; 设置在一个电极5A和另一个电极5B之间的金属纳米颗粒或功能分子; 设置在第一绝缘层2上的第二绝缘层8，以及一个电极5A和另一个电极5B，以嵌入金属纳米颗粒或功能分子。 第二绝缘层用作钝化层。
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公开(公告)号：US09595604B2
公开(公告)日：2017-03-14
申请号：US14773547
申请日：2014-03-09
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
Inventor： Yutaka Majima , Toshiharu Teranishi , Yasuo Azuma , Masanori Sakamoto , Shinya Kano , Daniel Eduardo Hurtado Salinas
CPC classification number: H01L29/7613 , B82Y10/00 , G11C7/00 , H01L29/0665 , H01L29/127 , H01L29/413 , H01L51/0098
Abstract: Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element includes: one electrode 5A and an other electrode 5B arranged to have a nanogap therebetween; and halide ion 6 provided between the electrodes 5A and 5B; and on one of the electrodes.
Abstract translation: 提供一种用作开关或存储器而不使用金属纳米颗粒的电子元件。 电子元件包括：一个电极5A和布置成在其间具有纳米隙的另一电极5B; 和设置在电极5A和5B之间的卤离子6; 并在其中一个电极上。
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公开(公告)号：US20160020311A1
公开(公告)日：2016-01-21
申请号：US14773547
申请日：2014-03-09
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
Inventor： Yutaka Majima , Toshiharu Teranishi , Yasuo Azuma , Masanori Sakamoto , Shinya Kano , Daniel Eduardo Hurtado Salinas
CPC classification number: H01L29/7613 , B82Y10/00 , G11C7/00 , H01L29/0665 , H01L29/127 , H01L29/413 , H01L51/0098
Abstract: Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element comprises: one electrode 5A and other electrode 5B arranged to have a nanogap therebetween; and halide ion 6 provided between the electrodes 5A and 5B; and on one of the electrodes. When voltage between the electrodes 5A and 5B is continuously varied from a positive value to a negative value and from a negative value to a positive value, a waveform of electrical current flowing between the electrodes 5A and 5B is asymmetrical. The state of the halide ion 6 is varied in accordance with a value of the voltage that is applied between the electrodes 5A and 5B so that an information-writing-state and an information-erasing-state are maintained in accordance with a value of the electric current that flows between the electrodes 5A and 5B.
Abstract translation: 提供一种用作开关或存储器而不使用金属纳米颗粒的电子元件。 电子元件包括：一个电极5A和布置成在其间具有纳米隙的其它电极5B; 和设置在电极5A和5B之间的卤离子6; 并在其中一个电极上。 当电极5A和5B之间的电压从正值连续变化到负值，从负值连续变化到正值时，在电极5A和5B之间流动的电流的波形是不对称的。 卤离子6的状态根据施加在电极5A和5B之间的电压的值而变化，从而根据信号写入状态和信息擦除状态 在电极5A和5B之间流动的电流。
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公开(公告)号：US09240561B2
公开(公告)日：2016-01-19
申请号：US14381868
申请日：2013-02-27
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
Inventor： Yutaka Majima , Toshiharu Teranishi , Kazuhiko Matsumoto , Kenzo Maehashi , Yasuo Azuma , Yasuhide Ohno , Kosuke Maeda , Guillaume Hackenberger
IPC: H01L51/05 , H01L27/088 , H01L27/06 , B82Y10/00 , H01L27/04 , H01L29/66 , H01L21/822 , H01L49/00 , H01L51/10
CPC classification number: H01L51/0512 , B82Y10/00 , H01L21/8221 , H01L27/04 , H01L27/0611 , H01L27/0688 , H01L27/088 , H01L29/66477 , H01L29/7613 , H01L49/006 , H01L51/102 , H01L2251/10
Abstract: This invention is to provide a nanodevice, which is combined with an electronic device such as a diode, tunnel device and MOS transistor, integrated circuit and manufacturing method of the nanodevice. A nanodevice includes: a first insulating layer 2; one electrode 5A and the other electrode 5B provided to have a nanogap on the first insulating layer 2; a metal nanoparticle or a functional molecule provided between the one electrode 5A and the other electrode 5B; a second insulating layer 8 provided on the first insulating layer 2, and on the one electrode 5A and the other electrode 5B to embed the metal nanoparticle or the functional molecule. The second insulating layer works as a passivating layer.
Abstract translation: 本发明提供一种与诸如二极管，隧道器件和MOS晶体管的电子器件组合的纳米器件，集成电路和纳米器件的制造方法。 纳米器件包括：第一绝缘层2; 一个电极5A和另一个电极5B设置成在第一绝缘层2上具有纳米隙; 设置在一个电极5A和另一个电极5B之间的金属纳米颗粒或功能分子; 设置在第一绝缘层2上的第二绝缘层8，以及一个电极5A和另一个电极5B，以嵌入金属纳米颗粒或功能分子。 第二绝缘层用作钝化层。
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