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公开(公告)号：US20130256937A1
公开(公告)日：2013-10-03
申请号：US13990164
申请日：2011-12-05
IPC分类号： H01B13/00
CPC分类号： H01B13/00 , H01L51/0023 , H01L51/102
摘要： A method for producing a conductive area in a polymer material comprises: providing a polymer layer comprising conductive particles with a density such that the polymer layer is insulating, heating the polymer material to a temperature higher than or equal to the glass transition temperature of the polymer material, compressing a portion of the polymer layer using a stamp, in order to obtain a density of conductive particles such that the portion becomes conductive, and removing the stamp from the polymer layer.
摘要翻译： 用于在聚合物材料中制造导电区域的方法包括：提供包含导电颗粒的聚合物层，其密度使得聚合物层是绝缘的，将聚合物材料加热到高于或等于聚合物的玻璃化转变温度的温度 材料，使用印模压缩聚合物层的一部分，以获得导电颗粒的密度，使得该部分变得导电，以及从聚合物层去除印模。
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2.发明申请METHOD FOR ELIMINATING ENGRAVING DEFECTS FROM A METAL FILM DEPOSITED ON A FLEXIBLE CARRIER 审中-公开消除从柔性载体上沉积的金属膜中消除缺陷的方法公开(公告)号：US20090314145A1
公开(公告)日：2009-12-24
申请号：US12470135
申请日：2009-05-21
CPC分类号： H05K3/26 , B08B3/02 , H05K1/0393 , H05K3/027 , H05K3/22 , H05K2201/0761 , H05K2203/0346 , H05K2203/0746 , Y10T83/0591
摘要： The invention relates to a method for eliminating mask projection laser ablation engraving defects from a metal film deposited on a flexible carrier. According to the invention, the method comprises spraying onto said defects a liquid pressurized at between about 1500 PSI and about 3000 PSI.
摘要翻译： 本发明涉及一种从沉积在柔性载体上的金属膜消除掩模投影激光烧蚀雕刻缺陷的方法。 根据本发明，该方法包括向所述缺陷喷涂在约1500psi至约3000psi之间加压的液体。
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公开(公告)号：US09281103B2
公开(公告)日：2016-03-08
申请号：US13990164
申请日：2011-12-05
CPC分类号： H01B13/00 , H01L51/0023 , H01L51/102
摘要： A method for producing a conductive area in a polymer material comprises: providing a polymer layer comprising conductive particles with a density such that the polymer layer is insulating, heating the polymer material to a temperature higher than or equal to the glass transition temperature of the polymer material, compressing a portion of the polymer layer using a stamp, in order to obtain a density of conductive particles such that the portion becomes conductive, and removing the stamp from the polymer layer.
摘要翻译： 用于在聚合物材料中制造导电区域的方法包括：提供包含导电颗粒的聚合物层，其密度使得聚合物层是绝缘的，将聚合物材料加热到高于或等于聚合物的玻璃化转变温度的温度 材料，使用印模压缩聚合物层的一部分，以获得导电颗粒的密度，使得该部分变得导电，以及从聚合物层去除印模。
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4.发明授权Photodiode device containing a capacitor for controlling dark current or leakage current 有权含有用于控制暗电流或漏电流的电容器的光电二极管装置公开(公告)号：US09142789B2
公开(公告)日：2015-09-22
申请号：US14127271
申请日：2012-07-04
申请人： Mohamed Benwadih
发明人： Mohamed Benwadih
CPC分类号： H01L51/441 , H01L51/5212 , Y02E10/549
摘要： An organic photodiode, including a first electrode forming an anode, an active layer, a second electrode, and at least one third electrode, forming a capacitance with another electrode, to trap at least part of dark current or leakage current.
摘要翻译： 一种有机光电二极管，包括形成阳极的第一电极，有源层，第二电极和至少一个第三电极，与另一个电极形成电容，以捕获至少一部分暗电流或漏电流。
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公开(公告)号：US08258504B2
公开(公告)日：2012-09-04
申请号：US12628415
申请日：2009-12-01
申请人： Mohamed Benwadih
发明人： Mohamed Benwadih
IPC分类号： H01L35/24
CPC分类号： H01L51/0541 , H01L51/0036 , H01L51/0055 , H01L51/0562
摘要： This organic field effect transistor comprises a semiconductor layer made of an organic semiconductor material. The mobility μsup of the charge carriers in the first portion of the semiconductor layer is X times greater than the mobility μinf of the charge carriers in the second portion of the semiconductor layer, with the first portion corresponding to 10% of the volume of the semiconductor layer closest to the gate electrode and the second portion corresponding to 10% of the volume of the semiconductor layer closest to the drain and source electrodes.
摘要翻译： 该有机场效应晶体管包括由有机半导体材料制成的半导体层。 半导体层的第一部分中的电荷载流子的迁移率μsup比半导体层的第二部分中的电荷载流子的迁移率μinf大X倍，第一部分对应于半导体的体积的10％ 最靠近栅电极的层，第二部分对应于最靠近漏极和源电极的半导体层的体积的10％。
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公开(公告)号：US07964901B2
公开(公告)日：2011-06-21
申请号：US12625909
申请日：2009-11-25
申请人： Mohamed Benwadih
发明人： Mohamed Benwadih
IPC分类号： H01L29/06
CPC分类号： H01L51/0558 , H01L51/0055 , H01L51/052 , H01L51/055
摘要： Field-effect transistor that includes at least a gate, a layer of insulator, a drain, a source, a semi-conductor material connecting the source to the drain, the gate and the layer of insulator each surrounding the assembly constituted by the source, the drain and the semi-conductor material, the layer of insulator being arranged between the gate and said assembly.The drain and the source are constituted by first and second electrical conductors respectively, arranged in a parallel way and disconnected one from the other, the first and second conductors being surrounded by a layer of semi-conductor over their entire circumference and over at least a part of their length.
摘要翻译： 场效应晶体管，其至少包括栅极，绝缘体层，漏极，源极，将源极连接到漏极的半导体材料，绝缘体的栅极和层，其围绕由源构成的组件， 漏极和半导体材料，绝缘体层被布置在栅极和所述组件之间。 漏极和源极分别由并联布置并彼此断开的第一和第二电导体构成，第一和第二导体在其整个圆周上被一层半导体包围，并且至少一个 他们的长度的一部分。
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7.发明授权公开(公告)号：US08889473B2
公开(公告)日：2014-11-18
申请号：US13639284
申请日：2011-03-07
CPC分类号： H01L51/0007 , B82Y30/00 , H01L51/0005 , H01L51/0022 , H01L51/0053 , H01L51/0055 , H01L51/0068 , H01L51/0074 , H01L51/0094 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.
摘要翻译： 本发明涉及一种用于制造表面相邻的第一和第二区域的方法，所述区域分别由彼此不同的第一和第二材料组成。 所述方法包括：沉积包含第一区域的第一液体体积并且包含第一材料分散在其中的溶剂; 沉积包含第二区域的第二液体体积并且包括分散有第二材料的溶剂; 并除去溶剂。 根据本发明，第一和第二体积的溶剂是不混溶的，并且在第一体积到达第二区域之前，第二体积与第一体积的沉积同时或连续地沉积。
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公开(公告)号：US08710494B2
公开(公告)日：2014-04-29
申请号：US13500273
申请日：2010-09-30
IPC分类号： H01L21/02
CPC分类号： H01L51/0554 , H01L51/004 , H01L51/0516
摘要： The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.
摘要翻译： 有机存储器件是双栅极晶体管，其连续地包括第一栅极电极，第一栅极电介质，有机半导体材料，第二栅极电介质和第二栅极电极。 源电极和漏极布置在有机半导体材料中并限定电极间表面。 在有机半导体材料和栅极电极之间布置有捕获区域，并且与栅极电极或有机半导体材料中的一个电接触。 捕获区域至少面向电极间表面。
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公开(公告)号：US20130029455A1
公开(公告)日：2013-01-31
申请号：US13639284
申请日：2011-03-07
IPC分类号： H01L51/40
CPC分类号： H01L51/0007 , B82Y30/00 , H01L51/0005 , H01L51/0022 , H01L51/0053 , H01L51/0055 , H01L51/0068 , H01L51/0074 , H01L51/0094 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.
摘要翻译： 本发明涉及一种用于制造表面相邻的第一和第二区域的方法，所述区域分别由彼此不同的第一和第二材料组成。 所述方法包括：沉积包含第一区域的第一液体体积并且包含第一材料分散在其中的溶剂; 沉积包含第二区域的第二液体体积并且包括分散有第二材料的溶剂; 并除去溶剂。 根据本发明，第一和第二体积的溶剂是不混溶的，并且在第一体积到达第二区域之前，第二体积与第一体积的沉积同时或连续地沉积。
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公开(公告)号：US20100183806A1
公开(公告)日：2010-07-22
申请号：US12635768
申请日：2009-12-11
IPC分类号： B05D3/02
CPC分类号： B05D7/54 , B05D1/286 , B05D3/0254 , B05D5/00
摘要： The invention relates to a method of depositing a layer of material onto the surface of an object, of the type comprising the deposition of a layer of solution of said material in a first liquid followed by the evaporation of the first liquid to form the layer of material.According to the invention, the method comprises the formation of a layer of a second liquid interposed between the object and the layer of solution, the second liquid being immiscible with the first liquid, of density greater than that of the first liquid and with an evaporating temperature higher than that of the first liquid.
摘要翻译： 本发明涉及一种在物体表面上沉积材料层的方法，该方法包括将所述材料的溶液层沉积在第一液体中，然后蒸发第一液体以形成第 材料。 根据本发明，该方法包括在物体和溶液层之间形成第二液体层，第二液体与第一液体不混溶，密度大于第一液体的密度，并且蒸发 温度高于第一液体。
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