摘要:
An integrated circuit which provides an arrangement by which the source of voltage for erasing the flash EEPROM memory array is detected and, if the source is a charge pump, the current provided is held to a constant lower value while, if the source is an external high voltage source, then the current is allowed to flow freely without regulation except by the size of a field effect transistor device in the path from the source of voltage to the memory array. In this manner, the circuitry is adapted to function with either internal or external power sources without paying a performance penalty for either type of operation.
摘要:
An integrated circuit which provides an arrangement by which the source of voltage for erasing the flash EEPROM memory array is detected and, if the source is a charge pump, the current provided is held to a constant lower value while, if the source is an external high voltage source, then the current is allowed to flow freely without regulation except by the size of a field effect transistor device in the path from the source of voltage to the memory array. In this manner, the circuitry is adapted to function with either internal or external power sources without paying a performance penalty for either type of operation.
摘要:
An integrated circuit arrangement for providing programming voltages to a flash EEPROM memory array including an arrangement for selecting subsets of bits of a word which is to be programmed and applying programming voltages only to the memory transistors of a selected subset.
摘要:
An integrated circuit arrangement for providing erase voltages to a flash EEPROM memory array including one charge pump for generating a first high voltage with substantial current which may be used for application to the source terminals of flash EEPROM memory cells during erase and to the gate terminals of flash EEPROM memory cells during programming, and another charge pump for generating a second lower voltage which may be used for application to the drain terminals of flash EEPROM memory cells during programming.
摘要:
A programmable logic device that includes a voltage input and a detection circuit coupled to the voltage input is described. The detection circuit detects whether a voltage applied to the voltage input exceeds a predetermined value. The programmable logic device also includes a configuration circuit coupled to the detection circuit. The configuration circuit configures the programmable logic device to receive a current sufficient for program and erase operations through the voltage input in response to the detection circuit detecting that the voltage exceeds the predetermined value.
摘要:
A circuit for providing digital output signals carrying large amounts of currents without generating large transients including apparatus for providing a first current path for providing current at a first rate and a first polarity, apparatus for providing a second current path for providing current at the first rate and the first polarity after a first delay, and apparatus for providing a third current path for providing current of the first polarity at a rate greater than the first rate and sufficient for a load connected thereto after a second delay equal to the first delay whereby the current available at the load has built to a level sufficient to sustain the load prior to the provision of the third current.
摘要:
A low-power interface for nonvolatile writeable memory is described. The interface includes an input buffer and an output buffer. The input buffer receives input signals having one of a number of pairs of logic levels. The input buffer is coupled to the nonvolatile writeable memory and coupled to the same power supply as the nonvolatile writeable memory. The input buffer translates the input signals received to the signal level used by the nonvolatile writeable memory. The output buffer is coupled to the nonvolatile writeable memory and is coupled to a different power supply from the input buffer and the nonvolatile writeable memory. The output buffer translates the signals received from the nonvolatile writeable memory to the same signal levels as the input signal. The input buffer and output buffer utilize input/output signals having logic levels compatible with complementary metal-oxide semiconductor (CMOS) technology.
摘要:
A port expander for providing an external memory to be used with a microcontroller but recapturing the use of I/O ports which are lost due to the coupling of the memory. Two ports are coupled to the microcontroller for transfer of address and data information. An EPROM in the port expander provides the external memory while a special function register is used to couple data to and from two I/O ports. A configuration register provides programmability of which address values address the memory and which address values address the special function registers.
摘要:
A test mode enable circuit in which a test mode code is written to one latch and a test mode enable code is written to a second latch. The test mode enable code is compared to preprogrammed values stored in the enable circuit. When the test mode enable code matches the preprogrammed value, a presence of a high voltage activates a test mode enable signal for entering the test mode. The latched test mode code is then used to perform the desired test. Additionally a pulsewidth detector is used as a filter to permit only high voltages of a minimum pulsewidth duration to activate the enable signal thereby preventing false triggering.
摘要:
A method and apparatus for partitioning a flash memory device is provided. The flash memory device includes a plurality of partitions, each partition able to be read, written, or erased simultaneously with the other partitions.