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    Method of using vertically configured chamber used for multiple processes
    3.
    发明授权
    Method of using vertically configured chamber used for multiple processes 有权
    使用垂直配置的室用于多个过程的方法

    公开(公告)号：US06969456B2

    公开(公告)日：2005-11-29

    申请号：US10041029

    申请日：2001-12-28

    申请人： Konstantin Volodarsky ,  Boguslaw A. Nagorski ,  Rimma Volodarsky ,  Douglas W. Young ,  Cyprian Uzoh ,  Homayoun Talieh

    发明人： Konstantin Volodarsky ,  Boguslaw A. Nagorski ,  Rimma Volodarsky ,  Douglas W. Young ,  Cyprian Uzoh ,  Homayoun Talieh

    IPC分类号： C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3063 ,  C25F3/00 ,  B08B3/04

    CPC分类号： H01L21/6719 ,  C25D7/12 ,  C25D17/001 ,  H01L21/67028 ,  Y10S134/902

    摘要： The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

    摘要翻译： 本发明涉及一种用于进行多个处理步骤的容纳室，例如沉积，抛光，蚀刻，改性，漂洗，清洁和干燥工件上的表面。 在本发明的一个实例中，室用于在半导体晶片上化学机械地沉积导电材料。 然后可以使用相同的容纳室来冲洗和清洁相同的晶片。 结果，本发明消除了对用于沉积导电材料和清洁晶片的单独处理站的需要。 因此，利用本发明，降低了成本和物理空间，同时提供了使用容纳室在晶片表面上执行多个工艺的有效的装置和方法。

    Anode assembly for plating and planarizing a conductive layer
    4.
    发明授权
    Anode assembly for plating and planarizing a conductive layer 有权
    用于电镀和平坦化导电层的阳极组件

    公开(公告)号：US06773576B2

    公开(公告)日：2004-08-10

    申请号：US10251377

    申请日：2002-09-20

    申请人： Rimma Volodarsky ,  Konstantin Volodarsky ,  Cyprian Uzoh ,  Homayoun Talieh ,  Douglas W. Young

    发明人： Rimma Volodarsky ,  Konstantin Volodarsky ,  Cyprian Uzoh ,  Homayoun Talieh ,  Douglas W. Young

    IPC分类号： C25F302

    CPC分类号： C25D17/14 ,  C25F7/00

    摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.

    摘要翻译： 可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。 阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。 支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。 可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。 还提供了可以将溶液输送到所述阳极腔的溶液输送结构。 溶液输送结构可以包含在进行操作的室内。 护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。

    Anode assembly for plating and planarizing a conductive layer
    6.
    发明授权
    Anode assembly for plating and planarizing a conductive layer 有权
    用于电镀和平坦化导电层的阳极组件

    公开(公告)号：US06478936B1

    公开(公告)日：2002-11-12

    申请号：US09568584

    申请日：2000-05-11

    申请人： Rimma Volodarsky ,  Konstantin Volodarsky ,  Cyprian Uzoh ,  Homayoun Talieh ,  Douglas W. Young

    发明人： Rimma Volodarsky ,  Konstantin Volodarsky ,  Cyprian Uzoh ,  Homayoun Talieh ,  Douglas W. Young

    IPC分类号： C25B1103

    CPC分类号： C25D17/14 ,  C25F7/00

    摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.

    摘要翻译： 可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。 阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。 支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。 可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。 还提供了可以将溶液输送到所述阳极腔的溶液输送结构。 溶液输送结构可以包含在进行操作的室内。 护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。

    Vertically configured chamber used for multiple processes
    7.
    发明授权
    Vertically configured chamber used for multiple processes 有权
    垂直配置的腔室用于多个过程

    公开(公告)号：US06884334B2

    公开(公告)日：2005-04-26

    申请号：US10041058

    申请日：2001-12-28

    申请人： Konstantin Volodarsky ,  Boguslaw A. Nigorski ,  Rimma Volodarsky ,  Douglas W. Young ,  Cyprian Uzoh ,  Homayoun Talieh

    发明人： Konstantin Volodarsky ,  Boguslaw A. Nigorski ,  Rimma Volodarsky ,  Douglas W. Young ,  Cyprian Uzoh ,  Homayoun Talieh

    IPC分类号： C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3063 ,  C25D5/00

    CPC分类号： H01L21/6719 ,  C25D7/12 ,  C25D17/001 ,  H01L21/67028 ,  Y10S134/902

    摘要： The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

    摘要翻译： 本发明涉及一种用于进行多个处理步骤的容纳室，例如沉积，抛光，蚀刻，改性，漂洗，清洁和干燥工件上的表面。 在本发明的一个实例中，室用于在半导体晶片上化学机械地沉积导电材料。 然后可以使用相同的容纳室来冲洗和清洁相同的晶片。 结果，本发明消除了对用于沉积导电材料和清洁晶片的单独处理站的需要。 因此，利用本发明，降低了成本和物理空间，同时提供了使用容纳室在晶片表面上执行多个工艺的有效的装置和方法。

    Anode assembly for plating and planarizing a conductive layer
    8.
    发明申请
    Anode assembly for plating and planarizing a conductive layer 审中-公开
    用于电镀和平坦化导电层的阳极组件

    公开(公告)号：US20050040049A1

    公开(公告)日：2005-02-24

    申请号：US10914490

    申请日：2004-08-10

    申请人： Rimma Volodarsky ,  Konstantin Volodarsky ,  Cyprian Uzoh ,  Homayoun Talieh ,  Douglas Young

    发明人： Rimma Volodarsky ,  Konstantin Volodarsky ,  Cyprian Uzoh ,  Homayoun Talieh ,  Douglas Young

    IPC分类号： B23H7/00 ,  C25D5/08 ,  C25D7/12 ,  C25D17/10 ,  H01L21/288 ,  H01L21/768

    CPC分类号： C25D17/001 ,  C25D5/08 ,  C25D17/008 ,  C25D17/10 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

    摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.

    摘要翻译： 可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。 阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。 支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。 可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。 还提供了可以将溶液输送到所述阳极腔的溶液输送结构。 溶液输送结构可以包含在进行操作的室内。 护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。